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Correction ARTICLE Provisionally accepted The full-text will be published soon. Notify me

Front. Chem. | doi: 10.3389/fchem.2019.00795

Corrigendum: The Structure of Oxygen Vacancies in the Near-Surface of Reduced CeO2 (111) Under Strain

  • 1Shanghai Institute of Applied Physics, Chinese Academy of Sciences, China
  • 2Georgia Institute of Technology, United States
  • 3Consejo Superior de Investigaciones Científicas (CSIC) Granada, Spain

In the original article, there were two mistakes in Figure 8. The SSV and SSSV labeling in the top-right and bottom-left panels were interchanged. Moreover, in the bottom-right panel, the Densities of states (DOS) summed over spin projections and all atoms for a SSSV shown, did not correspond to those of the structure under +4% strain with AB and 12 Ce 3+ configurations and 5 × 5 periodicity, as indicated in the caption. The corrected Figure 8 appears below. The authors apologize for this error and state that the discussion in the original article corresponds to the correct Figure 8, and that the mistake occurred when trying to send a higher quality figure during proofs.FIGURE 8 | Densities of states (DOS) summed over spin projections and all atoms for a SSV and SSSV under −5%, and +5%, or +4% strain with AB and 12 Ce 3+ configurations and 5 × periodicity. The Fermi level is set as the zero energy value, below which the states are occupied.

Keywords: CeO2, DFT, Oxygen vacancies, Strain, Surface structers

Received: 27 Sep 2019; Accepted: 05 Nov 2019.

Copyright: © 2019 Han, Zhang, Liu, Ganduglia-Pirovano and Gao. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

* Correspondence: Mx. Yi Gao, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201800, Shanghai Municipality, China, gaoyi@sinap.ac.cn