TY - JOUR AU - Ibukuro, Kouta AU - Husain, Muhammad Khaled AU - Li, Zuo AU - Hillier, Joseph AU - Liu, Fayong AU - Tomita, Isao AU - Tsuchiya, Yoshishige AU - Rutt, Harvey AU - Saito, Shinichi PY - 2019 M3 - Original Research TI - Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature JO - Frontiers in Physics UR - https://www.frontiersin.org/articles/10.3389/fphy.2019.00152 VL - 7 SN - 2296-424X N2 - We show a manipulation of a single electron at room temperature by controlling Random Telegraph Signals (RTSs) by voltage pulses. Our silicon nanowire triple-gate transistor exhibited RTSs when potential barriers were electrically created by two of the three gates. From the statistics of the signals, we optimized the voltage pulse such that a single electron was intentionally captured in the potential well, and the retention time of approximately 10 ms was observed in this memory operation. This study indicates that a single electron effect can be controllable in a form of RTSs at room temperature by electrically defining a potential well. ER -