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        <title>Frontiers in Electronic Materials | New and Recent Articles</title>
        <link>https://www.frontiersin.org/journals/electronic-materials</link>
        <description>RSS Feed for Frontiers in Electronic Materials | New and Recent Articles</description>
        <language>en-us</language>
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        <pubDate>2026-04-10T15:00:18.865+00:00</pubDate>
        <ttl>60</ttl>
        <item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2026.1769839</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2026.1769839</link>
        <title><![CDATA[Advancements in thin film thermoelectric: progress and perspective on materials and devices]]></title>
        <pubdate>2026-03-24T00:00:00Z</pubdate>
        <category>Review</category>
        <author>Nurfarhana Ahmad Musri</author><author>Angella Th’ng</author><author>Izzah Hanim Abd Aziz</author><author>Ubaidah Syafiq</author>
        <description><![CDATA[Thin film thermoelectric materials have garnered significant attention due to their potential for efficient energy conversion in various applications, ranging from waste heat recovery to wearable electronics to space exploration. This review paper provides a comprehensive overview of recent advancements in thin film thermoelectric materials and devices. The first discusses the fundamental principles governing thermoelectricity and the parameters influencing the thermoelectric performance, such as the Seebeck coefficient, electrical conductivity, and thermal conductivity. Then, it elucidates the unique properties of thin films that make them promising candidates for thermoelectric applications. It then highlights recent developments in novel thermoelectric materials, including conventional inorganic materials such as bismuth telluride, as well as emerging materials like lanthanum (III) telluride. The synthesis methods, including physical vapor deposition, chemical vapor deposition, and solution-based techniques, are further discussed along with their impacts on the structural and electrical properties of thin film thermoelectric materials. The review also highlights recent progress in the fabrication of device and their performances. Finally, future research directions and emerging trends in thin film thermoelectric are outlined to inspire further advancements in this rapidly evolving field.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2025.1622176</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2025.1622176</link>
        <title><![CDATA[2DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effect]]></title>
        <pubdate>2025-07-09T00:00:00Z</pubdate>
        <category>Original Research</category>
        <author>V. Stanishev</author><author>I. Streicher</author><author>A. Papamichail</author><author>V. Rindert</author><author>P. P. Paskov</author><author>S. Leone</author><author>V. Darakchieva</author>
        <description><![CDATA[We present a contactless determination of the two-dimensional electron gas (2DEG) properties in AlScN/GaN and AlYN/GaN high electron mobility transistor (HEMT) structures using the terahertz optical Hall effect (OHE) over a temperature range of 20 K–360 K. The structures are grown on sapphire or 4H-SiC substrates by metalorganic chemical vapor deposition (MOCVD) and feature ∼10-nm thick barrier layers with Sc and Y contents ranging from 4.6% to 17.3% and 3.3% to 8.2%, respectively. The temperature dependencies of the 2DEG density and mobility parameters are analyzed and discussed in a comparative manner. Additionally, conclusions are drawn regarding the predominant scattering mechanisms at both low and room temperatures. Furthermore, the 2DEG effective mass parameter m* in AlScN/GaN and AlYN/GaN is determined for the first time. At low temperatures m* is found to be in the range 0.20−0.27m0, close to the value of 0.23m0 for bulk GaN. As temperature increases above 100 K, m* gradually rises reaching 0.33−0.39m0 at room temperature, consistent with findings for AlGaN/GaN HEMTs. The underlying causes of this temperature-dependent increase in effective mass are discussed, with a possible explanation linked to polaron effects and deviations from the classical Drude model.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2025.1572940</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2025.1572940</link>
        <title><![CDATA[Characterizing sample degradation from synchrotron based X-ray measurements of ultra-thin exfoliated flakes]]></title>
        <pubdate>2025-06-25T00:00:00Z</pubdate>
        <category>Original Research</category>
        <author>M. F. DiScala</author><author>V. Hsieh</author><author>B. S. Jessen</author><author>Y. Gu</author><author>D. J. Rizzo</author><author>J. M. Amontree</author><author>X. Yan</author><author>Q. Wang</author><author>M. Kapfer</author><author>T. Kim</author><author>M. Geiwitz</author><author>G. Natale</author><author>J. Pelliciari</author><author>J. C. Hone</author><author>K. S. Burch</author><author>D. N. Basov</author><author>C. R. Dean</author><author>V. Bisogni</author><author>K. W. Plumb</author>
        <description><![CDATA[It is undeniable that novel 2D devices and heterostructures will have a lasting impact on the advancement of future technologies. However, the inherent instability of many exfoliated van der Waals (vdW) materials is a well-known hurdle yet to be overcome. Thus, the sustained interest in exfoliated vdW materials underscores the importance of understanding the mechanisms of sample degradation to establish proactive protective measures. Here, the impact of prolonged synchrotron-based X-ray beam exposure on exfoliated flakes of two contemporary vdW materials, NiPS3 and α-RuCl3, is explored using resonant inelastic X-ray scattering (RIXS) and total fluorescence yield X-ray absorption spectroscopy (XAS). In NiPS3, the resulting RIXS and XAS spectra show a suppression, then vanishing, of NiS6 multiplet excitations coupled with an upward shift of the peak energy of the XAS as a function of X-ray dose. In α-RuCl3, the signs of beam damage from the RIXS spectra are less evident. However, the post-experiment characterization of both materials using Raman spectroscopy exhibits signals of an amorphous and disordered system compared to pristine flakes; in addition, energy-dispersive X-ray spectroscopy of NiPS3 shows evidence of ligand vacancies. As synchrotron radiation is fast becoming a required probe to study 2D vdW materials, these findings lay the groundwork for the development of future protective measures for synchrotron-based prolonged X-ray beam exposure, as well as for X-ray free electron laser.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2025.1456147</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2025.1456147</link>
        <title><![CDATA[Excitonic insulator candidate Ta2NiSe5 and related transition-metal compounds studied by resonant inelastic x-ray scattering]]></title>
        <pubdate>2025-02-06T00:00:00Z</pubdate>
        <category>Mini Review</category>
        <author>Takashi Mizokawa</author><author>Claude Monney</author>
        <description><![CDATA[Resonant inelastic x-ray scattering (RIXS) can probe electron-hole excitations in excitonic insulators (EIs) which are realized by Coulomb attractive interaction between electrons and holes in semimetals or narrow gap semiconductors. In the present article, we review the exotic electronic state of an EI candidate Ta2NiSe5 which is probed by Ni 2p-3d RIXS as well as Ni 2p x-ray photoemission/absorption spectroscopy. The RIXS results on the exotic electronic state under the electron-hole and electron-lattice correlations suggest requirement of a new theoretical scheme which can describe itinerant electron-hole excitations and the localized charge-transfer excitations as well as the electron-lattice interaction.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2024.1473324</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2024.1473324</link>
        <title><![CDATA[Dynamic charge order from strong correlations in the cuprates]]></title>
        <pubdate>2024-11-13T00:00:00Z</pubdate>
        <category>Review</category>
        <author>Eduardo H. da Silva Neto</author><author>Alex Frano</author><author>Fabio Boschini</author>
        <description><![CDATA[Charge order has been a central focus in the study of cuprate high-temperature superconductors due to its intriguing yet not fully understood connection to superconductivity. Recent advances in resonant inelastic x-ray scattering (RIXS) in the soft x-ray regime have enabled the first momentum-resolved studies of dynamic charge order correlations in the cuprates. This progress has opened a window for a more nuanced investigation into the mechanisms behind the formation of charge order (CO) correlations. This review provides an overview of RIXS-based measurements of dynamic CO correlations in various cuprate materials. It specifically focuses on electron-doped cuprates and Bi-based hole-doped cuprates, where the CO-related RIXS signals may reveal signatures of the effective Coulomb interactions. This aims to explore a connection between two central phenomena in the cuprates: strong Coulomb correlations and CO-forming tendencies. Finally, we discuss current open questions and potential directions for future RIXS studies as the technique continues to improve and mature, along with other probes of dynamic correlations that would provide a more comprehensive picture.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2024.1487856</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2024.1487856</link>
        <title><![CDATA[Advances in hard X-ray RIXS toward meV resolution in the study of 5d transition metal materials]]></title>
        <pubdate>2024-10-03T00:00:00Z</pubdate>
        <category>Perspective</category>
        <author>Jungho Kim</author><author>Xiangrong Huang</author><author>Thomas Toellner</author><author>Ayman Said</author>
        <description><![CDATA[Resonant inelastic X-ray scattering (RIXS) has played a pivotal role in advancing our understanding of spin-orbit physics in 5d transition metal materials. The progress in RIXS techniques has closely paralleled improvements in energy resolution, which have enabled the study of very low-lying excitations and led to the discovery of numerous new phenomena with significant scientific and technological implications. The multi-bend achromat (MBA) lattice upgrade of third-generation synchrotron sources, such as the Advanced Photon Source (APS), heralds a transformative era by introducing enhancements in brilliance and emittance. These advancements provide an opportunity to push the boundaries of RIXS techniques, meeting the challenges at the research frontiers of material science. This article aims to highlight key instrumental and technical advancements that enable the achievement of meV resolution in RIXS and discuss the impact of such high-resolution RIXS on exploring spin-orbit physics in 5d transition metal materials.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2024.1396521</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2024.1396521</link>
        <title><![CDATA[On the importance of varying device thickness and temperature on the outcome of space-charge-limited current measurements]]></title>
        <pubdate>2024-05-17T00:00:00Z</pubdate>
        <category>Perspective</category>
        <author>Alfred Zhao</author><author>Vincent M. Le Corre</author><author>Jason A. Röhr</author>
        <description><![CDATA[Space-charge-limited current (SCLC) measurements are commonly employed to characterize charge-transport properties of semiconductors used in next-generation thin-film optoelectronics, such as organic π-conjugated small molecules and polymers, and metal-halide perovskites. Despite the wide-spread adoption of the method, there is no community-wide consensus around how SCLC measurements should be performed, nor how the data should be analyzed and reported. While it is common to report device characteristics by employing a simplistic analytical model for fitting a single J-V curve obtained from a solitary device at room temperature—sometimes in a very select voltage range—expectedly, such an approach will often not give an accurate picture of the underlying physics. On that account, we here aim to highlight the importance of reporting values extracted from not just a solitary single-carrier device measured at room temperature, but from devices with different thicknesses measured at varying device temperature. We also highlight how the choice of device thickness is especially critical in determining what device and material characteristics can be extracted from SCLC measurements, and how this choice can greatly affect the conclusions drawn about the probed semiconducting material. While other factors could affect the outcome of an SCLC measurement and the subsequent analysis, we hope that the topics covered in this article will result in overall improved charge-transport characterization of thin-film semiconductors and initiate a broader discussion into SCLC metrology at large.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2024.1392760</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2024.1392760</link>
        <title><![CDATA[Uniaxial stress effect on the electronic structure of quantum materials]]></title>
        <pubdate>2024-05-09T00:00:00Z</pubdate>
        <category>Review</category>
        <author>Na Hyun Jo</author><author>Elena Gati</author><author>Heike Pfau</author>
        <description><![CDATA[Uniaxial stress has proven to be a powerful experimental tuning parameter for effectively controlling lattice, charge, orbital, and spin degrees of freedom in quantum materials. In addition, its ability to manipulate the symmetry of materials has garnered significant attention. Recent technical progress to combine uniaxial stress cells with quantum oscillation and angle-resolved photoemission techniques allowed to study the electronic structure as function of uniaxial stress. This review provides an overview on experimental advancements in methods and examines studies on diverse quantum materials, encompassing the semimetal WTe2, the unconventional superconductor Sr2RuO4, Fe-based superconductors, and topological materials.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2024.1403513</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2024.1403513</link>
        <title><![CDATA[Editorial: Progress on superconducting materials for SRF applications]]></title>
        <pubdate>2024-04-17T00:00:00Z</pubdate>
        <category>Editorial</category>
        <author>Pashupati Dhakal</author><author>Tsuyoshi Tajima</author><author>Marc Wenskat</author>
        <description></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2024.1401752</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2024.1401752</link>
        <title><![CDATA[Corrigendum: Characterization of dissipative regions of a N-doped superconducting radio-frequency cavity]]></title>
        <pubdate>2024-04-03T00:00:00Z</pubdate>
        <category>Correction</category>
        <author>Eric M. Lechner</author><author>Basu Dev Oli</author><author>Junki Makita</author><author>Gianluigi Ciovati</author><author>Alex Gurevich</author><author>Maria Iavarone</author>
        <description></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2024.1350447</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2024.1350447</link>
        <title><![CDATA[LiNbO3-based memristors for neuromorphic computing applications: a review]]></title>
        <pubdate>2024-03-11T00:00:00Z</pubdate>
        <category>Review</category>
        <author>Caxton Griffith Kibebe</author><author>Yue Liu</author>
        <description><![CDATA[Neuromorphic computing is a promising paradigm for developing energy-efficient and high-performance artificial intelligence systems. The unique properties of lithium niobate-based (LiNbO3)-based memristors, such as low power consumption, non-volatility, and high-speed switching, make them ideal candidates for synaptic emulation in neuromorphic systems. This study investigates the potential of LiNbO3-based memristors to revolutionize neuromorphic computing by exploring their synaptic behavior and optimizing device parameters, as well as harnessing the potential of LiNbO3-based memristors to create efficient and high-performance neuromorphic computing systems. By realizing efficient and high-speed neural networks, this literature review aims to pave the way for innovative artificial intelligence systems capable of addressing complex real-world challenges. The results obtained from this investigation will be crucial for future researchers and engineers working on designing and implementing LiNbO3-based neuromorphic computing architectures.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2024.1339293</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2024.1339293</link>
        <title><![CDATA[Magneto-thermal limitations in superconducting cavities at high radio-frequency fields]]></title>
        <pubdate>2024-03-08T00:00:00Z</pubdate>
        <category>Original Research</category>
        <author>I. Parajuli</author><author>G. Ciovati</author><author>A. Gurevich</author>
        <description><![CDATA[The performance of superconducting radio-frequency Nb cavities at high radio-frequency (rf) fields in the absence of field emission can be limited by either a sharp decrease of the quality factor Q0(Bp) above peak surface magnetic fields Bp ∼100 mT or by a quench. We have measured Q0(Bp) at 2 K of several 1.3 GHz single-cell Nb cavities with different grain sizes, and with different ambient magnetic fields and cooldown rates below the critical temperature. Temperature mapping and a novel magnetic field mapping systems were used to find the location of “hot-spots” and regions of trapped magnetic flux. The use of a variable input coupler allowed further exploring the dissipative state. The results showed a remarkable thermal stability in some cavities with up to 200 W of rf power dissipation at 2 K, whereas other cavities quenched at much lower rf power. We observed a narrow distributions of the onset fields of hot-spots which were not affected by thermal cycling or by conditions which favor the formation of Nb hydrides. Furthermore, a poor correlation was found between the location of hot-spots and trapped vortices. We suggest that the totality of our experimental data can be explained by a sharp increase of the residual surface resistance above 120–140 mT due to the field-induced breakdown of a proximity-coupled metallic suboxide layer at the surface.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2024.1346235</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2024.1346235</link>
        <title><![CDATA[SRF material research using muon spin rotation and beta-detected nuclear magnetic resonance]]></title>
        <pubdate>2024-02-15T00:00:00Z</pubdate>
        <category>Review</category>
        <author>Tobias Junginger</author><author>Robert Laxdal</author><author>W. A. MacFarlane</author><author>Andreas Suter</author>
        <description><![CDATA[Muon spins precess in transverse magnetic fields and emit a positron preferentially in the spin direction at the instant of decay, enabling muon spin rotation (μSR) as a precise probe of local magnetic fields in matter. μSR has been used to characterize superconducting radio-frequency (SRF) materials since 2010. At TRIUMF, a beam of 4.2 MeV μ+ is implanted at a material-dependent depth of approximately 150 μm. A dedicated spectrometer was developed to measure the field of first vortex penetration and pinning strength in SRF materials in parallel magnetic fields of up to 300 mT. A low-energy beam available at PSI implants μ+ at variable depth in the London layer allowing for direct measurements of the London penetration depth from which other material parameters relevant for SRF applications, such as the lower critical field and the superheating field, can be calculated. Beta-detected nuclear magnetic resonance (β-NMR) is a technique similar to low-energy μSR using beams of low-energy β radioactive ions. With a recent upgrade, it is capable of detecting the penetration of parallel magnetic vortices, depth resolved with nanometer resolution at applied fields of up to 200 mT. In this paper, we review the impact and capabilities of these techniques for SRF research.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2023.1323404</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2023.1323404</link>
        <title><![CDATA[Pair density wave and superconductivity in a kinetically frustrated doped Emery model on a square lattice]]></title>
        <pubdate>2023-11-28T00:00:00Z</pubdate>
        <category>Original Research</category>
        <author>Hong-Chen Jiang</author><author>Thomas Peter Devereaux</author>
        <description><![CDATA[The quest to understand the nature of superconductivity in the cuprates has spotlighted the pair density wave (PDW)–a superconducting state characterized by a spatially modulated order parameter. Despite significant advances in understanding PDW properties, conclusively demonstrating its presence in systems pertinent to cuprate superconductors remains elusive. In this study, we present a systematic density-matrix renormalization group study to investigate the Emery model (or the three-band Hubbard model) on two-leg square cylinders with negative electron hopping term tpp between adjacent oxygen sites. Kinetic frustration - introduced by changing the sign of oxygen-oxygen hopping - leads to a much reduced Cu-Cu antiferromagnetic exchange along with an enlarged charge transfer energy that changes the local properties of the model. At light doping levels, our findings reveal a ground state remarkably consistent with a PDW, exhibiting mutually commensurate superconducting (SC), charge, and spin density wave correlations. Intriguingly, the dominant SC pairing is observed between neighboring oxygen sites, diverging from the expected Cu sites in the positive tpp case. When the system incorporates moderate near-neighbor interactions, particularly an attractive Vpp between adjacent oxygen sites, the SC correlations become quasi-long-ranged, accompanied by a pronounced divergence in the PDW susceptibility. When the attractive Vpp increases further, the system gives way to an unconventional d-wave superconductivity.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2023.1257490</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2023.1257490</link>
        <title><![CDATA[Electron-hole asymmetry in the phase diagram of carrier-tuned CsV3Sb5]]></title>
        <pubdate>2023-10-24T00:00:00Z</pubdate>
        <category>Original Research</category>
        <author>Andrea N. Capa Salinas</author><author>Brenden R. Ortiz</author><author>Calvin Bales</author><author>Jonathan Frassineti</author><author>Vesna F. Mitrović</author><author>Stephen D. Wilson</author>
        <description><![CDATA[In this work, we study the effect of electron doping on the kagome superconductor CsV3Sb5. Single crystals and powders of CsV3Sb5−xTex are synthesized and characterized via magnetic susceptibility, nuclear quadrupole resonance, and x-ray diffraction measurements, where we observe a slight suppression of the charge density wave transition temperature and superconducting temperature with the introduction of electron dopants. In contrast to hole doping, both transitions survive relatively unperturbed up to the solubility limit of Te within the lattice. A comparison is presented between the electronic phase diagrams of electron- and hole-tuned CsV3Sb5.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2023.1244126</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2023.1244126</link>
        <title><![CDATA[Mid-T heat treatments on BCP’ed coaxial cavities at TRIUMF]]></title>
        <pubdate>2023-10-09T00:00:00Z</pubdate>
        <category>Original Research</category>
        <author>P. Kolb</author><author>Z. Yao</author><author>A. Blackburn</author><author>R. Gregory</author><author>D. Hedji</author><author>M. McMullin</author><author>T. Junginger</author><author>R. E. Laxdal</author>
        <description><![CDATA[Mid-T heat treatments in the range from 250°C to 400°C on superconducting radio-frequency (SRF) cavities have been shown to provide high quality factors that rise with applied rf field strength in high frequency, electro-polished (EP), elliptical cavities operating at 2 K, similar to nitrogen doped cavities. The rise in quality factor is attributed to a decrease in the temperature dependent part of the surface resistance RBCS. Until now, no results have been reported for these new treatments on quarter-wave resonators (QWR) and half-wave resonators (HWR). The TRIUMF multi-mode coaxial cavities are dedicated test cavities that allow frequency and temperature resolved performance characterization of treatments without changing environments, therefore providing an excellent test vehicle to test these new treatments with rf frequencies ranging from 200 to 1,200 MHz. In this paper, performance measurements from both QWR and HWR cavities are reported and their performance compared with four different treatments: baseline, a conventional 120°C low temperature bake for 48 h, and two mid-T bakes at 300°C and 400°C for 3 h. In addition, sample analysis using SEM, EDX and SIMS of witness samples is also shown. It is found that the mid-T bakes are not directly transferable to low frequency cavities. In the fundamental modes of the two test cavities, no performance gain over the baseline treatment nor a decreasing temperature dependent component with rising rf amplitude was observed. At frequencies above 1 GHz and low temperatures, the mid-T bakes show a reduced field dependence of RBCS compared to both the baseline and 120°C treatments.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2023.1222691</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2023.1222691</link>
        <title><![CDATA[Nanoindentation response of small-volume piezoelectric structures and multi-layered composites: modeling the effect of surrounding materials]]></title>
        <pubdate>2023-09-20T00:00:00Z</pubdate>
        <category>Original Research</category>
        <author>Guang Cheng</author><author>Zonglin Wu</author><author>T. A. Venkatesh</author>
        <description><![CDATA[With piezoelectric small-volume composites gaining importance in smart device applications and nanoindentation being recognized as a versatile method for assessing the properties of layer materials, the present study is focused on the indentation response of the small-volume piezoelectric structures multi-layered composites. In particular, the effects of the nature of the substrate and surrounding materials, on the indentation response of piezoelectric nanocomposites, such as nanoislands, nanowires, and multi-layered composites are investigated. By developing three-dimensional finite element modeling, the complex interaction between the fundamental elastic, piezoelectric and dielectric properties of the piezoelectric materials and the elastic, plastic and electrically conducting or insulating properties of the surrounding materials, on the indentation response of the layered composites is analyzed. It is found that: (i) a substrate material that is elastically stiffer enhances the mechanical indentation stiffness and the electric indentation stiffness while plastic deformation in the substrate causes a reduction in the mechanical and electrical indentation stiffness; (ii) the effective piezoelectric and mechanical indentation stiffnesses of piezoelectric multi-layered composites are bounded by the corresponding characteristics of the bulk material counterparts from which the individual layers are constructed; (iii) electrically conducting surrounding materials produce a softening effect while insulating materials enhance the electrical indentation stiffness resulting in more charges being accumulated during the indentation process.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2023.1259401</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2023.1259401</link>
        <title><![CDATA[Electromagnetic response of disordered superconducting cavities]]></title>
        <pubdate>2023-09-20T00:00:00Z</pubdate>
        <category>Original Research</category>
        <author>Mehdi Zarea</author><author>Hikaru Ueki</author><author>J. A. Sauls</author>
        <description><![CDATA[We present the results for the resonant frequency shift and quality factor of disordered niobium (Nb) superconducting radio-frequency cavities driven out of equilibrium by the resonant microwave field. The theory is based on the non-equilibrium theory of superconductivity for the current response to the electromagnetic field at the vacuum–metal interface. We are able to accurately predict the observed frequency shifts with a precision of order fractions of kHz over the full temperature range 0 < T ≤ Tc, including the negative frequency shift anomalies that are observed very near Tc. The origin of these anomalies is shown to be the competition between the normal metal skin depth and the London penetration depth, which diverges as T→Tc−. An analytical approximation to the full current response, valid for |T − Tc|≪ Tc, accounts for the negative frequency shift near Tc. The non-monotonic dependence of the quality factor on the quasiparticle scattering rate is related to the pair-breaking effect of disorder on the superfluid fraction and, thus, the London penetration depth.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2023.1228899</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2023.1228899</link>
        <title><![CDATA[The State Change Per Cycle Map: a novel system-theoretic analysis tool for periodically-driven ReRAM cells]]></title>
        <pubdate>2023-09-12T00:00:00Z</pubdate>
        <category>Original Research</category>
        <author>A. Ascoli</author><author>N. Schmitt</author><author>I. Messaris</author><author>A. S. Demirkol</author><author>R. Tetzlaff</author><author>L. O. Chua</author>
        <description><![CDATA[Memristive devices are the subject of extensive studies nowadays. While the Dynamic Route Map is a powerful tool for analyzing the response of first-order memristors under DC stimuli, the development of an equivalent tool for investigating the response of these devices to AC stimuli is still an open question. Recently, Pershin and Slipko introduced a graphic method, which we name Time Average State Dynamic Route (TA-SDR), applicable to study first-order memristors subject to periodic rectangular pulse train-based stimuli. In this paper we introduce an alternative investigation tool, referred to as State Change Per Cycle Map (SCPCM), which is applicable in these very same scenarios. The novel analysis technique, inspired by the work of the French mathematician Henri Poincaré, reduces the investigation of a first-order non-autonomous continuous-time system to a simpler study of a first-order discrete-time map. A State Change Per Cycle Map defines precisely how the stimulus modulates each of the admissible device memory states over one input cycle. It is derivable either by means of numerical simulations, where a model for the ReRAM cell is available, or experimentally, in the case where the device memory state is accessible. While the predictive capability of a TA-SDR is limited to those case studies, where the AC periodic voltage signal applied across the device induces negligible changes in the respective memory state over each cycle, the conclusions drawn by analyzing a SCPCM have general validity, irrespective of the properties of the stimulus. The advantages of the novel analysis method for periodically driven ReRAM cells over the classical TA-SDR tool are highlighted through a number of case studies, some of which reveal the interesting capability of the ReRAM cell to display multiple oscillatory operating modes upon periodic stimulation via trains with a suitable number of SET and RESET pulses per period.]]></description>
      </item><item>
        <guid isPermaLink="true">https://www.frontiersin.org/articles/10.3389/femat.2023.1246016</guid>
        <link>https://www.frontiersin.org/articles/10.3389/femat.2023.1246016</link>
        <title><![CDATA[Superheating field in superconductors with nanostructured surfaces]]></title>
        <pubdate>2023-09-07T00:00:00Z</pubdate>
        <category>Original Research</category>
        <author>W. P. M. R. Pathirana</author><author>A. Gurevich</author>
        <description><![CDATA[We report calculations of a DC superheating field Hsh in superconductors with nanostructured surfaces. Numerical simulations of the Ginzburg–Landau (GL) equations were performed for a superconductor with an inhomogeneous impurity concentration, a thin superconducting layer on top of another superconductor, and superconductor–insulator–superconductor (S-I-S) multilayers. The superheating field was calculated taking into account the instability of the Meissner state with a non-zero wavelength along the surface, which is essential for the realistic values of the GL parameter κ. Simulations were performed for the material parameters of Nb and Nb3Sn at different values of κ and the mean free paths. We show that the impurity concentration profile at the surface and thicknesses of S-I-S multilayers can be optimized to enhance Hsh above the bulk superheating fields of both Nb and Nb3Sn. For example, an S-I-S structure with a 90-nm-thick Nb3Sn layer on Nb can boost the superheating field up to ≈500 mT, while protecting the superconducting radio-frequency (SRF) cavity from dendritic thermomagnetic avalanches caused by local penetration of vortices.]]></description>
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