AUTHOR=Nandan Keshari , Agarwal Amit , Bhowmick Somnath , Chauhan Yogesh S. TITLE=Two-dimensional semiconductors based field-effect transistors: review of major milestones and challenges JOURNAL=Frontiers in Electronics VOLUME=Volume 4 - 2023 YEAR=2023 URL=https://www.frontiersin.org/journals/electronics/articles/10.3389/felec.2023.1277927 DOI=10.3389/felec.2023.1277927 ISSN=2673-5857 ABSTRACT=

Two-dimensional (2-D) semiconductors are emerging as strong contenders for the future of Angstrom technology nodes. Their potential lies in enhanced device scaling and energy-efficient switching compared to traditional bulk semiconductors like Si, Ge, and III-V compounds. These materials offer significant advantages, particularly in ultra-thin devices with atomic scale thicknesses. Their unique structures enable the creation of one-dimensional nanoribbons and vertical and lateral heterostructures. This versatility in design, coupled with their distinctive properties, paves the way for efficient energy switching in electronic devices. Moreover, 2-D semiconductors offer opportunities for integrating metallic nanoribbons, carbon nanotubes (CNT), and graphene with their 2-D channel materials. This integration helps overcome lithography limitations for gate patterning, allowing the realization of ultra-short gate dimensions. Considering these factors, the potential of 2-D semiconductors in electronics is vast. This concise review focuses on the latest advancements and engineering strategies in 2-D logic devices.