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<front>
<journal-meta>
<journal-id journal-id-type="publisher-id">Front. Mater.</journal-id>
<journal-title>Frontiers in Materials</journal-title>
<abbrev-journal-title abbrev-type="pubmed">Front. Mater.</abbrev-journal-title>
<issn pub-type="epub">2296-8016</issn>
<publisher>
<publisher-name>Frontiers Media S.A.</publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id pub-id-type="doi">10.3389/fmats.2014.00018</article-id>
<article-categories>
<subj-group subj-group-type="heading">
<subject>Materials</subject>
<subj-group>
<subject>Review Article</subject>
</subj-group>
</subj-group>
</article-categories>
<title-group>
<article-title>Impact of Atomic Layer Deposition to Nanophotonic Structures and Devices</article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author" corresp="yes">
<name><surname>Saleem</surname> <given-names>Muhammad Rizwan</given-names></name>
<xref ref-type="aff" rid="aff1"><sup>1</sup></xref>
<xref ref-type="aff" rid="aff2"><sup>2</sup></xref>
<xref ref-type="corresp" rid="cor1">&#x0002A;</xref>
<uri xlink:href="http://frontiersin.org/people/u/83622"/>
</contrib>
<contrib contrib-type="author">
<name><surname>Ali</surname> <given-names>Rizwan</given-names></name>
<xref ref-type="aff" rid="aff1"><sup>1</sup></xref>
<uri xlink:href="http://frontiersin.org/people/u/182883"/>
</contrib>
<contrib contrib-type="author">
<name><surname>Khan</surname> <given-names>Mohammad Bilal</given-names></name>
<xref ref-type="aff" rid="aff2"><sup>2</sup></xref>
<uri xlink:href="http://frontiersin.org/people/u/185561"/>
</contrib>
<contrib contrib-type="author">
<name><surname>Honkanen</surname> <given-names>Seppo</given-names></name>
<xref ref-type="aff" rid="aff1"><sup>1</sup></xref>
</contrib>
<contrib contrib-type="author">
<name><surname>Turunen</surname> <given-names>Jari</given-names></name>
<xref ref-type="aff" rid="aff1"><sup>1</sup></xref>
</contrib>
</contrib-group>
<aff id="aff1"><sup>1</sup><institution>Institute of Photonics, University of Eastern Finland</institution>, <addr-line>Joensuu</addr-line>, <country>Finland</country></aff>
<aff id="aff2"><sup>2</sup><institution>Center for Energy Systems (CES), USAID Center for Advance Studies, National University of Sciences and Technology (NUST)</institution>, <addr-line>Islamabad</addr-line>, <country>Pakistan</country></aff>
<author-notes>
<fn fn-type="edited-by"><p>Edited by: Mohammed Es-Souni, Kiel University of Applied Sciences, Germany</p></fn>
<fn fn-type="edited-by"><p>Reviewed by: Venu Gopal Achanta, Tata Institute of Fundamental Research, India; Bouchta Sahraoui, University of Angers, France</p></fn>
<corresp content-type="corresp" id="cor1">&#x0002A;Correspondence: Muhammad Rizwan Saleem, Center for Energy Systems (CES), USAID Center for Advance Studies, National University of Sciences and Technology (NUST), Sector H-12, Islamabad 44000, Pakistan e-mail: <email>rizwan&#x00040;casen.nust.edu.pk</email>; <email>rizwan.saleem&#x00040;uef.fi</email></corresp>
<fn fn-type="other" id="fn001"><p>This article was submitted to Thin Solid Films, a section of the journal Frontiers in Materials.</p></fn>
</author-notes>
<pub-date pub-type="epub">
<day>15</day>
<month>10</month>
<year>2014</year>
</pub-date>
<pub-date pub-type="collection">
<year>2014</year>
</pub-date><volume>1</volume>
<elocation-id>18</elocation-id>
<history>
<date date-type="received">
<day>13</day>
<month>08</month>
<year>2014</year>
</date>
<date date-type="accepted">
<day>17</day>
<month>09</month>
<year>2014</year>
</date>
</history>
<permissions>
<copyright-statement>Copyright &#x000A9; 2014 Saleem, Ali, Khan, Honkanen and Turunen.</copyright-statement>
<copyright-year>2014</copyright-year>
<license license-type="open-access" xlink:href="http://creativecommons.org/licenses/by/4.0/"><p>This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.</p></license>
</permissions>
<abstract>
<p>We review the significance of optical thin films by Atomic Layer Deposition (ALD) method to fabricate nanophotonic devices and structures. ALD is a versatile technique to deposit functional coatings on reactive surfaces with conformal growth of compound materials, precise thickness control capable of angstrom resolution, and coverage of high aspect ratio nano-structures using wide range of materials. ALD has explored great potential in the emerging fields of photonics, plasmonics, nano-biotechnology, and microelectronics. ALD technique uses sequential reactive chemical reactions to saturate a surface with a monolayer by pulsing of a first precursor (metal alkoxides or covalent halides), followed by reaction with second precursor molecules such as water to form the desired compound coatings. The targeted thickness of the desired compound material is controlled by the number of ALD-cycles of precursor molecules that ensures the self-limiting nature of reactions. The conformal growth and filling of TiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> optical materials on nano-structures and their resulting optical properties have been described. The low temperature ALD-growth on various replicated sub-wavelength polymeric gratings is discussed.</p>
</abstract>
<kwd-group>
<kwd>atomic layer deposition</kwd>
<kwd>optical materials</kwd>
<kwd>nanophotonics</kwd>
<kwd>nano-optical devices</kwd>
<kwd>plasmonics</kwd>
</kwd-group>
<counts>
<fig-count count="9"/>
<table-count count="1"/>
<equation-count count="7"/>
<ref-count count="113"/>
<page-count count="15"/>
<word-count count="10728"/>
</counts>
</article-meta>
</front>
<body>
<sec id="S1" sec-type="introduction">
<label>1</label> <title>Introduction</title>
<p>Thin film deposition techniques have been significantly stimulated by the advancement in the high-tech applications in optical systems (Pedrotti, <xref ref-type="bibr" rid="B61">1993</xref>; Macleod, <xref ref-type="bibr" rid="B55">2001</xref>). Dielectric transparent optical thin films in conventional optical filters select a spectral range of transmitted or reflected light such as anti reflecting coatings, pass band filters, athermal optical filters, edge filters, lenses etc., for several precision instruments (Spiller, <xref ref-type="bibr" rid="B97">1984</xref>; Dobrowolski et al., <xref ref-type="bibr" rid="B19">1996</xref>; Szeghalmi et al., <xref ref-type="bibr" rid="B99">2009</xref>; Huber et al., <xref ref-type="bibr" rid="B32">2014</xref>). Analogously, the rapidly developing advanced applications include narrow band filters for dense wavelength division multiplexing, low laser damage devices, optical elements for deep ultraviolet, and extreme ultraviolet lithography (Weber et al., <xref ref-type="bibr" rid="B108">2012b</xref>), optical waveguides (slot waveguides, resonant waveguide structures, plasmonic structures, etc.) for optical signal processing in optical communications, optical quantum computations (Jia et al., <xref ref-type="bibr" rid="B38">2011</xref>; Weber et al., <xref ref-type="bibr" rid="B108">2012b</xref>; Jalaluddin and Magnusson, <xref ref-type="bibr" rid="B36">2013</xref>).</p>
<p>All such advanced applications require optical coatings of precise thickness control and of high quality (high packing density, good surface uniformity, low defect density, good adhesion with underlying substrate, etc.), which depends on choice of deposited film material and method being employed (Martinu et al., <xref ref-type="bibr" rid="B57">2014</xref>). The optical films must exhibit good mechanical properties such as good adhesion, acceptable scratch, abrasion resistance, low stress, low crack density, and thermally and environmentally stable are suitable for various applications in nanophotonics. Traditionally, optical coatings have been fabricated by Physical Vapor Deposition (PVD) techniques from solid material sources through evaporation (resistive heating and electron beam evaporation), sputtering (Chung et al., <xref ref-type="bibr" rid="B17">2009</xref>; Jalaluddin and Magnusson, <xref ref-type="bibr" rid="B36">2013</xref>), laser assisted evaporation, and ion assisted deposition with typically high deposition rates. In order to confine waveguide modes in dielectric films over tight tolerances, the control of films homogeneity, composition, thickness uniformity, adhesion with underlying substrate, and better control of microstructure (high packing density) are highly desirable and can be achieved by employing Atomic Layer Deposition (ALD) (Riihel&#x000E4; et al., <xref ref-type="bibr" rid="B69">1996</xref>;Saleem et al., <xref ref-type="bibr" rid="B84">2012b</xref>, <xref ref-type="bibr" rid="B90">2013c</xref>). ALD operates in cycles consisting of four essential steps: (1) exposure of first precursor material, (2) evacuation or purging of additional precursor material and reaction byproducts from the chamber, (3) exposure of second precursor material, typically oxidants or reagents, and (4) evacuation or purging of the reaction byproduct molecules from the chamber as shown schematically in Figure <xref ref-type="fig" rid="F1">1</xref>.</p>
<fig position="float" id="F1">
<label>Figure 1</label>
<caption>
<p><bold>Schematic of ALD-growth process [reproduced with permission (Kim et al., <xref ref-type="bibr" rid="B44">2009</xref>)]</bold>. Copyright 2009, Elsevier.</p></caption>
<graphic xlink:href="fmats-01-00018-g001.tif"/>
</fig>
<p>Atomic layer deposition is a modified form of Chemical Vapor Deposition (CVD) technique, which possesses angstrom level resolution, layer-by-layer growth of ultra-thin compound films on planar, and high aspect ratio micro- and nano-structures employed in various potential applications (Kim et al., <xref ref-type="bibr" rid="B44">2009</xref>). It distinguishes from CVD in terms that the precursor material pulses are introduced in the reactor on to the substrate alternately, once at a time (Ponraj et al., <xref ref-type="bibr" rid="B64">2013</xref>). The reactor is continuously purged with a commonly used inert gas such as nitrogen after each precursor pulse, which extracts all the reaction byproducts except those which are chemisorbed on the substrate. As a result, film growth proceeds through sequential surface reactions and enable self-limiting and self-controlled growth (Im et al., <xref ref-type="bibr" rid="B35">2012</xref>). Owing to the self-controlled film growth, the extremely accurate film thickness in angstroms depends on the number of ALD-cycles (Riihel&#x000E4; et al., <xref ref-type="bibr" rid="B69">1996</xref>). Another important consequence of self-controlled ALD-growth is that complex shaped high aspect ratio structures are uniformly coated over large-area substrates (George, <xref ref-type="bibr" rid="B23">2010</xref>; Wang et al., <xref ref-type="bibr" rid="B104">2014</xref>). ALD-Al<sub>2</sub>O<sub>3</sub> is employed to uniformly coat silica spheres in synthetic opals (Sechrist et al., <xref ref-type="bibr" rid="B95">2006</xref>). The wavelength of photonic crystals was investigated to shift progressively to longer wavelengths as a function of filled opal volume fraction by Al<sub>2</sub>O<sub>3</sub> with pinhole defect free characteristics (Sechrist et al., <xref ref-type="bibr" rid="B95">2006</xref>). This is worth emphasizing that films grown by ALD exhibit high density (Saleem et al., <xref ref-type="bibr" rid="B84">2012b</xref>, <xref ref-type="bibr" rid="B90">2013c</xref>, <xref ref-type="bibr" rid="B82">2014d</xref>) e.g., the measured hydrogen contents in ALD-grown TiO<sub>2</sub> (Ritala and Leskel&#x000E4;, <xref ref-type="bibr" rid="B70">1993</xref>; Ritala et al., <xref ref-type="bibr" rid="B72">1993</xref>) films are of lowest compared to those prepared by other techniques (Bennett et al., <xref ref-type="bibr" rid="B12">1989</xref>). The high density consequently verifies, relative low concentrations of penetrated H<sub>2</sub>O molecules into ALD-grown films (Saleem et al., <xref ref-type="bibr" rid="B84">2012b</xref>, <xref ref-type="bibr" rid="B90">2013c</xref>, <xref ref-type="bibr" rid="B82">2014d</xref>).</p>
<p>Typically, ALD-growth proceeds in slow fashion and produces sub-monolayer per cycle, which is a drawback of ALD technology. On the other hand, slow growth rates facilitate several high-tech processes as advantage and are paramount to ensure uniform high quality and pinhole defect free films over large areas. Since the origin of ALD technology is to deposit epitaxial layers on semiconductor substrates and were known as Atomic Layer Epitaxy (ALE) (Pimbley and Lu, <xref ref-type="bibr" rid="B63">1985</xref>; Goodman and Pessa, <xref ref-type="bibr" rid="B25">1986</xref>; Ide et al., <xref ref-type="bibr" rid="B33">1988</xref>; Gong et al., <xref ref-type="bibr" rid="B24">1990</xref>; Yu, <xref ref-type="bibr" rid="B113">1993</xref>; Bedair, <xref ref-type="bibr" rid="B11">1994</xref>), which demands thin dielectric gate oxide films (barrier layers) to control leakage current at minimum film thickness (Puurunen, <xref ref-type="bibr" rid="B67">2005</xref>). Furthermore, in photonics high quality and dense thin films are of significant importance to confine propagating modes via lithographically fabricated nano-structured topographies (Riyanto et al., <xref ref-type="bibr" rid="B74">2012</xref>). ALD-growth on such nano-structures proceeds as an independent process in order to mitigate any dimensional inaccuracies (Saleem et al., <xref ref-type="bibr" rid="B76">2011a</xref>). Such nano-structural inaccuracies are possibly be adjusted by the thickness of ALD-growth as a function of number of ALD controlled cycles to deposit films of the order of <italic>&#x000C5;</italic>.</p>
</sec>
<sec id="S2">
<label>2</label> <title>Characteristics of ALD Films for the Fabrication of Nanophotonic Structures</title>
<p>Nanophotonic structures consist of periodic alternation of refractive index as high-low-high-low contrast that can change the state of polarization, amplitude, or phase of an incident light (Knop, <xref ref-type="bibr" rid="B48">1978</xref>). The waveguide layer confines, propagates, and emerges the light as narrow spectral peaks by resonance of light modes within the structure. ALD-coated thin films play a significant role in the fabrication of nanophotonic structures to provide the following:
<list list-type="roman-lower">
<list-item><p>Excellent conformality of high aspect ratio nano-structures.</p></list-item>
<list-item><p>Excellent step coverage uniformity and thickness control over large scale smooth surfaces.</p></list-item>
<list-item><p>Low temperature growth, in particular on polymer materials below their glass transition temperatures as well as to deposit optical materials in amorphous phase.</p></list-item>
<list-item><p>Reasonably good precursor material properties with minimum damage to substrate materials.</p></list-item>
<list-item><p>Self-saturative growth when the surface binding sites are filled and/or deposited film thickness is highly reproducible after each ALD-cycle.</p></list-item>
</list></p>
<sec id="S2-1">
<label>2.1</label> <title>Low temperature ALD-growth</title>
<p>One of the important feature of ALD is to grow high quality thin films at low growth temperatures 50&#x02013;250&#x000B0;C (Triani et al., <xref ref-type="bibr" rid="B100">2009</xref>; Im et al., <xref ref-type="bibr" rid="B35">2012</xref>). Precursor molecules are thermally activated to react on the substrate surface and chemisorbed. Low temperature ALD-growth is extremely important for heat-sensitive materials such as polymers, biomaterials, and heat-sensitive structures: self-assembly of molecules, self-rolled microtubes with ultra-thin wall thickness (Purniawan et al., <xref ref-type="bibr" rid="B66">2010</xref>; Im et al., <xref ref-type="bibr" rid="B35">2012</xref>). TiO<sub>2</sub> films at 80&#x000B0;C are deposited on plasma-treated polycarbonate substrate, which shows enhanced adhesion to ALD-coated films (Latella et al., <xref ref-type="bibr" rid="B52">2007</xref>). Uniformly smooth thin amorphous ALD-TiO<sub>2</sub> films possessing high refractive index are coated on replicated nano-structures on various polymer substrates such as polycarbonate, OrmoComp, Cyclic-Olefin-copolymer (COC) at low deposition temperature of 120&#x000B0;C and have been employed as Resonant Waveguide Gratings (RWGs) or Guided Mode Resonance Filters (GMRFs) (Saleem et al., <xref ref-type="bibr" rid="B76">2011a</xref>, <xref ref-type="bibr" rid="B83">2012a</xref>,<xref ref-type="bibr" rid="B86">d</xref>, <xref ref-type="bibr" rid="B89">2013b</xref>, <xref ref-type="bibr" rid="B79">2014a</xref>,<xref ref-type="bibr" rid="B81">c</xref>). ALD-TiO<sub>2</sub> growth temperature has an effect on the film&#x02019;s surface roughness, density, and refractive index owing to crystallization of TiO<sub>2</sub> material to anatase phase. Increase in ALD-TiO<sub>2</sub> growth temperature from 175 to 225&#x000B0;C led to increase surface roughness due to crystallization, consequently the fabricated films are porous with relatively low density and refractive index compared to amorphous films prepared at 125&#x02013;150&#x000B0;C (Aarik et al., <xref ref-type="bibr" rid="B3">2000</xref>), for further details see sections <xref ref-type="sec" rid="S3-4">3.1</xref> and <xref ref-type="sec" rid="S3-5">3.2</xref>. A schematic representation of ALD-growth rate with growth temperature is shown in Figure <xref ref-type="fig" rid="F2">2</xref> (K&#x000E4;&#x000E4;ri&#x000E4;inen et al., <xref ref-type="bibr" rid="B40">2013</xref>).</p>
<fig position="float" id="F2">
<label>Figure 2</label>
<caption>
<p><bold>Schematic of ALD-growth process with temperature (Reproduced with permission &#x000A9; Picosun)</bold>.</p></caption>
<graphic xlink:href="fmats-01-00018-g002.tif"/>
</fig>
<p>In order to explore the best operating regime of ALD one needs to adjust temperatures and growth rates. At high growth temperatures, the second precursor material decompose on the surface before reaction with first precursor and consequently deposit on the substrate by increasing the growth rate. Alternatively, the first stable precursor may desorb before reaction with second precursor, thereby decreasing the growth rate. On the other hand, if the temperature is too low, the precursor materials may desorb without a complete reaction or even condense a liquid or solid on the surface and results to increase in growth rate. Alternatively, precursor materials do not possess sufficient thermal energy to activate appropriate reactions and thus results in to lower the deposition rate than expected. Keeping all these parameters in consideration, a complete or partial monolayer of molecules can be deposited by selection of suitable temperature zone through ALD temperature window (K&#x000E4;&#x000E4;ri&#x000E4;inen et al., <xref ref-type="bibr" rid="B40">2013</xref>). Temperature variations during ALD-growth have significant influence on the surface roughness e.g., in infiltration of silica opals to fabricate TiO<sub>2</sub> inverse opals with spherical size templates ranging from 200 to 440&#x02009;nm in diameter show different roughness (King et al., <xref ref-type="bibr" rid="B45">2005a</xref>). Atomic Force Microscopy (AFM) studies shows that TiO<sub>2</sub> films yielded a root-mean-square (RMS) roughness of 0.2&#x02009;nm at 100&#x000B0;C, 2.1&#x02009;nm at 300&#x000B0;C, and 9.6&#x02009;nm at 600&#x000B0;C, which shows that low temperature deposition is of much more significance for even filling and preparing extremely smooth interfaces (King et al., <xref ref-type="bibr" rid="B45">2005a</xref>).</p>
</sec>
<sec id="S2-2">
<label>2.2</label> <title>Self-controlled film thickness and material composition</title>
<p>Atomic layer deposition technique is capable to deposit thin atomic films with precisely controlled thickness and free from occurrence of light losses in optical micro- and nano-devices resulted by thickness roughness (Vahala, <xref ref-type="bibr" rid="B103">2003</xref>; Wang et al., <xref ref-type="bibr" rid="B105">2012</xref>). Scanning electron microscopy (SEM) images in Figure <xref ref-type="fig" rid="F3">3</xref>A show the conformal growth of ALD-TiO<sub>2</sub> films of various thicknesses of (0&#x02013;120&#x02009;nm) on Si triangular lattice of photonic crystals (PCs) (Graugnard et al., <xref ref-type="bibr" rid="B26">2006</xref>). Transmission Electron Microscopy (TEM) images of four-bilayer nanolaminates of W/Al<sub>2</sub>O<sub>3</sub> grown by ALD at temperature of 177&#x000B0;C are shown in Figure <xref ref-type="fig" rid="F3">3</xref>B (Sechrist et al., <xref ref-type="bibr" rid="B94">2005</xref>). Each nanolaminate in the structure employing 111 ALD-cycles of Al<sub>2</sub>O<sub>3</sub> and 32 to that of W, which are clearly shown in Figure <xref ref-type="fig" rid="F3">3</xref>B. Furthermore, it reveals that interfacial roughness is more prominent where Al<sub>2</sub>O<sub>3</sub> nucleates on W and possesses less roughness at interfaces. Tungsten W grows on Al<sub>2</sub>O<sub>3</sub> sites, which may results due to polycrystallinity of W nanolayer on Al<sub>2</sub>O<sub>3</sub>. More often, the ALD film growth is a fraction of one monolayer and has higher film density to those of films deposited by other techniques without pinhole defects (Carcia et al., <xref ref-type="bibr" rid="B14">2009</xref>; Saleem et al., <xref ref-type="bibr" rid="B84">2012b</xref>, <xref ref-type="bibr" rid="B90">2013c</xref>).</p>
<fig position="float" id="F3">
<label>Figure 3</label>
<caption>
<p><bold>(A)</bold> SEM images of top view of Si triangular lattice of photonic crystals coated by various thicknesses (0&#x02013;120&#x02009;nm) of ALD-TiO<sub>2</sub> films [reproduced with permission (Graugnard et al., <xref ref-type="bibr" rid="B26">2006</xref>)]. Copyright 2006, American Institute of Physics. <bold>(B)</bold> TEM image of a four-bilayer ALD-W/Al<sub>2</sub>O<sub>3</sub> nanolaminate structure grown at 177&#x000B0;C. ALD-Al<sub>2</sub>O<sub>3</sub> was grown by 111 ALD-cycles and 32 ALD-cycles were used for W-nanolaminate [reproduced with permission (Sechrist et al., <xref ref-type="bibr" rid="B94">2005</xref>)]. Copyright 2005, American Chemical Society.</p></caption>
<graphic xlink:href="fmats-01-00018-g003.tif"/>
</fig>
</sec>
<sec id="S2-3">
<label>2.3</label> <title>Conformal growth for 2D and 3D structures</title>
<p>Atomic layer deposition is a unique technique relies on the sequential self-terminating surface saturating reactions between gas-phase precursor molecules and a solid surface. Owing to the self-limiting reactions, it gives better control on thickness, conformality, film quality and uniformity, and large-area coverage of high aspect ratio nano-structures, 3D complex structures such as PC, opals, nanopores, nanowires, and nanotubes (King et al., <xref ref-type="bibr" rid="B46">2005b</xref>; Knez et al., <xref ref-type="bibr" rid="B47">2007</xref>). Figure <xref ref-type="fig" rid="F4">4</xref>A shows the cross-sectional views of SEM images of ZnS:Mn and TiO<sub>2</sub> infiltrated opals and inverted structures into silica opal templates. Figures <xref ref-type="fig" rid="F4">4</xref>B,C show the TiO<sub>2</sub>/SiO<sub>2</sub> opals and TiO<sub>2</sub> inverse opals where the growth in small central void space is precisely controlled by self-limiting nature of ALD, which enables accurately controlled deposition on complex geometries (King et al., <xref ref-type="bibr" rid="B46">2005b</xref>). Figures <xref ref-type="fig" rid="F4">4</xref>D,E show a multi-layered PC structure using TiO<sub>2</sub>/ZnS:Mn/TiO<sub>2</sub> in order to combine the luminescent properties of ZnS:Mn to that of higher refractive index of TiO<sub>2</sub>. The structure is fabricated with 10&#x02009;nm of ZnS:Mn in a sintered opal followed by TiO<sub>2</sub> deposition in remaining volume to fill. An Ion-mill is used to expose SiO<sub>2</sub> opal and etch by HF to form an inverse opal, which is subsequently infiltrated by 10&#x02009;nm of high refractive index ALD-TiO<sub>2</sub> layer (King et al., <xref ref-type="bibr" rid="B46">2005b</xref>).</p>
<fig position="float" id="F4">
<label>Figure 4</label>
<caption>
<p><bold>(A)</bold> SEM images of cross-sectional view of ZnS:Mn and TiO<sub>2</sub> infiltrated opals and inverse opals into SiO<sub>2</sub> opal templates. <bold>(B,C)</bold> SEM images of TiO<sub>2</sub>/SiO<sub>2</sub> and TiO<sub>2</sub> inverse opal. <bold>(D,E)</bold> Multi-layered PC structure of TiO<sub>2</sub>/ZnS:Mn/TiO<sub>2</sub> into SiO<sub>2</sub> opal template [reproduced with permission (King et al., <xref ref-type="bibr" rid="B46">2005b</xref>)]. Copyright 2004, Elsevier. <bold>(F)</bold> Schematic fabrication of TiO<sub>2</sub> nanotube arrays on Si substrate; (i) preparation of nanoporous Al-template by anodization of Al film, (ii) ALD-TiO<sub>2</sub> deposited on Al-template, (iii) surface layer removal of TiO<sub>2</sub>, and (iv) chemical etching of Al-template to reveal dense, aligned, and uniform array of TiO<sub>2</sub> nanotubes [reproduced with permission (Sander et al., <xref ref-type="bibr" rid="B92">2004</xref>)]. Copyright 2004, Wiley. <bold>(G&#x02013;J)</bold> Schematic of TiO<sub>2</sub> nanobowls preparation. <bold>(K)</bold> Polystyrene (PS) spheres staying on a TiO<sub>2</sub> nanobowls. The inset shows a PS sphere of 450&#x02009;nm in size inside a TiO<sub>2</sub> nanobowl [reproduced with permission (Wang et al., <xref ref-type="bibr" rid="B106">2004</xref>)]. Copyright 2004, American Chemical Society. <bold>(L,M)</bold> SEM images of alumina replicas of butterfly wing scale on Si substrate after removal of butterfly template [reproduced with permission (Huang et al., <xref ref-type="bibr" rid="B31">2006</xref>)]. Copyright 2006, American Chemical Society.</p></caption>
<graphic xlink:href="fmats-01-00018-g004.tif"/>
</fig>
<p>Uniform arrays of dense and aligned TiO<sub>2</sub> nanotubes are fabricated by employing ALD on nanoporous Al<sub>2</sub>O<sub>3</sub> on Si substrate as shown in Figure <xref ref-type="fig" rid="F4">4</xref>F (Sander et al., <xref ref-type="bibr" rid="B92">2004</xref>). The catalytic properties of such TiO<sub>2</sub> nanomembranes have been demonstrated by (Kemell et al., <xref ref-type="bibr" rid="B43">2007</xref>). Wang et al. (<xref ref-type="bibr" rid="B106">2004</xref>) patterned self-assembled monolayer of hexagonally arranged polystyrene and SiO<sub>2</sub> nanospheres. ALD-TiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> films are deposited on the substrate. TiO<sub>2</sub> surface layer was removed by ion beam followed by removal of polystyrene beads to form a micrometer-scaled surface with TiO<sub>2</sub> nanobowls as shown in Figures <xref ref-type="fig" rid="F4">4</xref>G&#x02013;J. The structure of ALD-TiO<sub>2</sub> nanobowls holding removable polystyrene nanospheres of size 450&#x02009;nm are shown in Figure <xref ref-type="fig" rid="F4">4</xref>K. Such uniformly fabricated structures demonstrated the major advantages of ALD compared to other deposition methods such as CVD or PLD in terms of conformal growth on complex geometries. Highly complex morphology of butterfly wing&#x02019;s structures are replicated after ALD coating (Huang et al., <xref ref-type="bibr" rid="B31">2006</xref>) shown in Figures <xref ref-type="fig" rid="F4">4</xref>L,M. Modifications of such structures by ALD can improve their potential use as optical elements e.g., in holography. ALD-TiO<sub>2</sub> was employed to tune the static photonic band of a 2D Si triangular lattice PC slab waveguide by nanoscale control of the dielectric contrast, propagation, and dispersion (Graugnard et al., <xref ref-type="bibr" rid="B26">2006</xref>). This research group also reported the fabrication of 3D nano-structures through synthetic silica opals and holographically patterned polymeric templates to control PC band gap properties (Graugnard et al., <xref ref-type="bibr" rid="B26">2006</xref>).</p>
</sec>
</sec>
<sec id="S3">
<label>3</label> <title>ALD Thin Films Optical Properties</title>
<p>The primary parameter to access the optical quality of a film is the complex refractive index with real part <italic>n</italic> and imaginary part <italic>k</italic> (extinction coefficient) and is related to the complex relative permittivity, &#x003B5;<sub>r</sub>&#x02009;&#x0003D;&#x02009;&#x003B5;<sub>r,r</sub>&#x02009;&#x02212;&#x02009;<italic>i</italic>&#x003B5;<sub>r,i</sub>
<disp-formula id="E1"><label>(1)</label><mml:math id="M1"><mml:mi>N</mml:mi><mml:mrow><mml:mo class="MathClass-open">(</mml:mo><mml:mrow><mml:mn>&#x003BB;</mml:mn></mml:mrow><mml:mo class="MathClass-close">)</mml:mo></mml:mrow><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:mi>n</mml:mi><mml:mrow><mml:mo class="MathClass-open">(</mml:mo><mml:mrow><mml:mn>&#x003BB;</mml:mn></mml:mrow><mml:mo class="MathClass-close">)</mml:mo></mml:mrow><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:mi>i</mml:mi><mml:mi>k</mml:mi><mml:mrow><mml:mo class="MathClass-open">(</mml:mo><mml:mrow><mml:mn>&#x003BB;</mml:mn></mml:mrow><mml:mo class="MathClass-close">)</mml:mo></mml:mrow><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:msqrt><mml:mrow><mml:msub><mml:mrow><mml:mn>&#x003B5;</mml:mn></mml:mrow><mml:mrow><mml:mi mathvariant="normal">r</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:msqrt><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:msqrt><mml:mrow><mml:msub><mml:mrow><mml:mn>&#x003B5;</mml:mn></mml:mrow><mml:mrow><mml:mi mathvariant="normal">r</mml:mi><mml:mo class="MathClass-punc">,</mml:mo><mml:mi mathvariant="normal">r</mml:mi></mml:mrow></mml:msub><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:mi>i</mml:mi><mml:msub><mml:mrow><mml:mn>&#x003B5;</mml:mn></mml:mrow><mml:mrow><mml:mi mathvariant="normal">r</mml:mi><mml:mo class="MathClass-punc">,</mml:mo><mml:mi mathvariant="normal">i</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:msqrt></mml:math></disp-formula>
where <italic>&#x003B5;</italic><sub>r,r</sub> and <italic>&#x003B5;</italic><sub>r,i</sub> represent the real and imaginary parts of <italic>&#x003B5;</italic><sub>r</sub>, respectively. Equation (<xref ref-type="disp-formula" rid="E1">1</xref>) relates the dielectric properties of the materials with optical properties and depends on wavelength called dispersion. When light passes through a lossy material that absorbs or scatters light and loses its energy called attenuated light. Attenuation may occur due to several mechanisms such as generation of phonons (lattice waves), photogeneration, free carrier absorption, and scattering (Kasap and Capper, <xref ref-type="bibr" rid="B42">2006</xref>). Equation (<xref ref-type="disp-formula" rid="E1">1</xref>) gives:
<disp-formula id="E2"><label>(2)</label><mml:math id="M2"><mml:msup><mml:mrow><mml:mi>n</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msup><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:msup><mml:mrow><mml:mi>k</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msup><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:msub><mml:mrow><mml:mn>&#x003B5;</mml:mn></mml:mrow><mml:mrow><mml:mi mathvariant="normal">r</mml:mi><mml:mo class="MathClass-punc">,</mml:mo><mml:mi mathvariant="normal">r</mml:mi></mml:mrow></mml:msub></mml:math></disp-formula>
and
<disp-formula id="E3"><label>(3)</label><mml:math id="M3"><mml:mn>2</mml:mn><mml:mi>n</mml:mi><mml:mi>k</mml:mi><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:msub><mml:mrow><mml:mn>&#x003B5;</mml:mn></mml:mrow><mml:mrow><mml:mi mathvariant="normal">r</mml:mi><mml:mo class="MathClass-punc">,</mml:mo><mml:mi mathvariant="normal">i</mml:mi></mml:mrow></mml:msub></mml:math></disp-formula>
where the optical constants <italic>n</italic> and <italic>k</italic> can be determined from the reflectance of thin films for a specified polarization and angle of incidence of light. For normal incidence, the reflection coefficient <italic>r</italic> is given as:
<disp-formula id="E4"><label>(4)</label><mml:math id="M4"><mml:mi>r</mml:mi><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:mfrac><mml:mrow><mml:mn>1</mml:mn><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:mi>N</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo class="MathClass-bin">&#x0002B;</mml:mo><mml:mi>N</mml:mi></mml:mrow></mml:mfrac><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:mfrac><mml:mrow><mml:mn>1</mml:mn><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:mi>n</mml:mi><mml:mo class="MathClass-bin">&#x0002B;</mml:mo><mml:mi>i</mml:mi><mml:mi>k</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo class="MathClass-bin">&#x0002B;</mml:mo><mml:mi>n</mml:mi><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:mi>i</mml:mi><mml:mi>k</mml:mi></mml:mrow></mml:mfrac><mml:mo class="MathClass-punc">.</mml:mo></mml:math></disp-formula>
Reflectance <italic>R</italic> is given as:
<disp-formula id="E5"><label>(5)</label><mml:math id="M5"><mml:mi>R</mml:mi><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:mo class="MathClass-rel">&#x0007C;</mml:mo><mml:mi>r</mml:mi><mml:msup><mml:mrow><mml:mo class="MathClass-rel">&#x0007C;</mml:mo></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msup><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:msup><mml:mrow><mml:mfenced separators="" open="|" close="|"><mml:mrow><mml:mfrac><mml:mrow><mml:mn>1</mml:mn><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:mi>n</mml:mi><mml:mo class="MathClass-bin">&#x0002B;</mml:mo><mml:mi>i</mml:mi><mml:mi>k</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo class="MathClass-bin">&#x0002B;</mml:mo><mml:mi>n</mml:mi><mml:mo class="MathClass-bin">&#x0002B;</mml:mo><mml:mi>i</mml:mi><mml:mi>k</mml:mi></mml:mrow></mml:mfrac></mml:mrow></mml:mfenced></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msup><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:mfrac><mml:mrow><mml:msup><mml:mrow><mml:mrow><mml:mo class="MathClass-open">(</mml:mo><mml:mrow><mml:mn>1</mml:mn><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:mi>n</mml:mi></mml:mrow><mml:mo class="MathClass-close">)</mml:mo></mml:mrow></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msup><mml:mo class="MathClass-bin">&#x0002B;</mml:mo><mml:msup><mml:mrow><mml:mi>k</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msup></mml:mrow><mml:mrow><mml:msup><mml:mrow><mml:mrow><mml:mo class="MathClass-open">(</mml:mo><mml:mrow><mml:mn>1</mml:mn><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:mi>n</mml:mi></mml:mrow><mml:mo class="MathClass-close">)</mml:mo></mml:mrow></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msup><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:msup><mml:mrow><mml:mi>k</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msup></mml:mrow></mml:mfrac><mml:mo class="MathClass-punc">.</mml:mo></mml:math>
</disp-formula> Larger values of <italic>k</italic> results in strong absorption and leads to reflectance almost unity. As a result light is reflected and any light in the medium is highly attenuated. In general, optical filter demands <italic>k</italic>(&#x003BB;) below 10<sup>&#x02212;4</sup> with corresponding optical losses well below 1&#x02009;dB/cm. In most optical thin films, the material selection requires amorphous (to avoid losses due to grain boundaries), isotropic, without birefringence and scattering losses below 10<sup>&#x02212;4</sup> (Martinu et al., <xref ref-type="bibr" rid="B57">2014</xref>).</p>
<p>Figures <xref ref-type="fig" rid="F5">5</xref>A,B show the transmittance of ALD-TiO<sub>2</sub> as deposited amorphous films of thickness &#x0007E;200&#x02009;nm on fused silica substrate with SEM image and heat treated ALD-TiO<sub>2</sub> films in crystalline (anatase phase) with corresponding SEM image, respectively (Saleem et al., <xref ref-type="bibr" rid="B88">2013a</xref>). Kumar et al. (<xref ref-type="bibr" rid="B51">2009</xref>) demonstrated the optical properties of thin Al<sub>2</sub>O<sub>3</sub> films grown by ALD in the spectral range of 400&#x02013;1800&#x02009;nm and retrieved optical constants from reflection spectra using Sellmeier&#x02019;s formula with mean square error values of 0.0006 and 0.0070 on silicon and soda lime glass substrates, respectively.</p>
<fig position="float" id="F5">
<label>Figure 5</label>
<caption>
<p><bold>(A)</bold> Transmittance (<italic>T</italic>) of ALD-TiO<sub>2</sub> as deposited film of thickness &#x0007E;200&#x02009;nm on fused silica substrate with inset of SEM image. <bold>(B)</bold> Transmittance (<italic>T</italic>) of ALD-TiO<sub>2</sub> heat treated film (crystalline phase-anatase) of thickness &#x0007E;200&#x02009;nm on fused silica substrate with inset of SEM image [reproduced with permission (Saleem et al., <xref ref-type="bibr" rid="B88">2013a</xref>)]. Copyright 2013, Optical Society of America.</p></caption>
<graphic xlink:href="fmats-01-00018-g005.tif"/>
</fig>
<sec id="S3-4">
<label>3.1</label> <title>Effect of ALD-growth temperature on crystal structure and optical scattering losses</title>
<p>ALD-TiO<sub>2</sub> films grow at 100&#x02013;140&#x000B0;C exhibit amorphous phase while containing chlorine contaminations, which decreases significantly with increase in growth temperature. The composition of TiO<sub>2</sub> films in terms of Ti/O ratio has a weak dependence on the growth temperature. The films grow at higher temperatures at 165&#x02013;350&#x000B0;C possess polycrystalline anatase phase where preferential orientation of crystallites occur while the films at 400&#x000B0;C contained rutile phase. The scattering losses due to crystalline phases was attributed and characterized quantitatively by the half width of {220} and {440} reflections of Reflection High Energy Electron Diffraction (RHEED) patterns (Aarik et al., <xref ref-type="bibr" rid="B1">1997a</xref>). A significantly perfect preferential orientation of crystallites results in a relatively smaller RHEED half widths, which predominantly occurred around 300&#x000B0;C for anatase phase while no preferential orientation at 400&#x000B0;C (rutile phase) appears (Aarik et al., <xref ref-type="bibr" rid="B1">1997a</xref>). Furthermore, films with non-preferential orientation characteristics at growth temperature 400&#x000B0;C have significant absorption in transmission at 400&#x02013;900&#x02009;nm wavelength ranges and dominate scattering losses owing to low packing density and consequent surface roughness. The polycrystalline films absorption may also be attributing to the crystallites&#x02019; surfaces and/or grain interfaces.</p>
</sec>
<sec id="S3-5">
<label>3.2</label> <title>Effect of ALD-growth temperature on density and refractive index</title>
<p>The refractive index of the films grown at 300&#x000B0;C is higher than that the films grown at 100 and 400&#x000B0;C. This is attributed to a decrease in the scattering losses due to preferential orientation of crystallites (Aarik et al., <xref ref-type="bibr" rid="B1">1997a</xref>). Unlike the anatase films, no preferential orientation occurs in rutile films at 400&#x000B0;C with substantial void contents between the crystallites, which result in decrease of packing density (Aarik et al., <xref ref-type="bibr" rid="B1">1997a</xref>). This fact described a linear increase in refractive index with increase in film&#x02019;s packing density (Ottermann and Bange, <xref ref-type="bibr" rid="B60">1996</xref>) and a decrease in orientation scattering and surface roughness (Aarik et al., <xref ref-type="bibr" rid="B4">1995</xref>). Similarly, Groner et al. (<xref ref-type="bibr" rid="B27">2004</xref>) demonstrated that the density of ALD-Al<sub>2</sub>O<sub>3</sub> films decreases with decreasing growth temperature and estimated average densities ranged from 3.0&#x02009;g/cm<sup>3</sup> at 177&#x000B0;C to 2.5&#x02009;g/cm<sup>3</sup>. ALD-Al<sub>2</sub>O<sub>3</sub> film densities have been calculated by (Ott et al., <xref ref-type="bibr" rid="B59">1997</xref>) using the Lorentz&#x02013;Lorenz relationship based on refractive index. Groner et al. (<xref ref-type="bibr" rid="B27">2004</xref>) demonstrated that the refractive index of Al<sub>2</sub>O<sub>3</sub> films decreases slightly with decreasing growth temperature with a reported refractive index <italic>n</italic>&#x02009;&#x02248;&#x02009;1.67 at growth temperature 300&#x02013;500&#x000B0;C. Other studies investigated that decrease in refractive index is caused by a density decrease with a rise in impurity levels at low growth temperatures (Kukli et al., <xref ref-type="bibr" rid="B50">1997</xref>).</p>
</sec>
<sec id="S3-6">
<label>3.3</label> <title>Effect of ALD-growth conditions on physical properties of films</title>
<p>The polycrystalline phases (rutile/TiO<sub>2</sub>-II) observed at a film thickness as minimum as 3&#x02009;nm at temperature 375&#x02013;550&#x000B0;C using TiCl<sub>4</sub> and H<sub>2</sub>O as precursor materials (Aarik et al., <xref ref-type="bibr" rid="B2">1997b</xref>). The crystal structure is controlled by the pressure of H<sub>2</sub>O precursor. Films grown at low H<sub>2</sub>O pressure possesses TiO<sub>2</sub>-II phase while high H<sub>2</sub>O pressures are favorable and result in rutile phase. Such phase formation is influenced by the H<sub>2</sub>O dose on the hydroxyl surface groups or on the abundance of H<sub>2</sub>O in gas-phase. In addition, the structure depends on the film thickness. A pure TiO<sub>2</sub>-II phase appears below a critical thickness <italic>t<sub>c</sub></italic> while rutile phase appeared at thickness above <italic>t<sub>c</sub></italic>. Both structures co-exist at a thickness range of 150&#x02013;180&#x02009;nm and <italic>t<sub>c</sub></italic> depends on the precursor pressures and subsequent purge times. Critical thickness <italic>t<sub>c</sub></italic> reduces abruptly with short purge times while growth rate increase with decreasing purge times. This is attributed to overlapping of the reactant pulses and increase gas-phase reaction on the surface. The growth rate varies slowly with precursor doses while <italic>t<sub>c</sub></italic> depends on both precursor doses (Aarik et al., <xref ref-type="bibr" rid="B2">1997b</xref>).</p>
<p>ALD-Al<sub>2</sub>O<sub>3</sub> growth has been studied more extensively than any other ALD system (George et al., <xref ref-type="bibr" rid="B22">1996</xref>). Typical Trimethylaluminum (TMA) and H<sub>2</sub>O are used for the growth of ALD-Al<sub>2</sub>O<sub>3</sub> as precursor materials. Groner et al. (<xref ref-type="bibr" rid="B27">2004</xref>) demonstrated maximum achievable growth rate &#x0007E;1.33&#x02009;&#x000C5;/cycle of Al<sub>2</sub>O<sub>3</sub> at 100 and 125&#x000B0;C, which is explained by essentially required thermal activation energy at lower temperatures and decreasing Al&#x02013;OH and Al&#x02013;CH<sub>3</sub> surface coverage at higher temperatures (Ott et al., <xref ref-type="bibr" rid="B59">1997</xref>). Growth rate depends on necessary surface species and subsequent reaction kinetics. At lower temperatures, the surface coverage becomes high, which dictates slow reaction kinetics while low surface coverage results due to rapid reaction kinetics at higher temperatures (Ott et al., <xref ref-type="bibr" rid="B59">1997</xref>).</p>
</sec>
</sec>
<sec id="S4">
<label>4</label> <title>ALD-Growth in Nanophotonic Structures</title>
<sec id="S4-7">
<label>4.1</label> <title>ALD-growth in resonant waveguide gratings</title>
<sec id="S4-7-1">
<label>4.1.1</label> <title>Resonance anomalies and origination of RWG</title>
<p>Briefly describing the history of RWGs, when Wood in 1902 observed sharp spectral variations in the intensity of a metallic grating for TM-polarized light (electric field vector is perpendicular to grating lines), which he named anomalies (Wood, <xref ref-type="bibr" rid="B111">1902</xref>). A theoretical explanation of these anomalies was given by Rayleigh in 1907 as one spectral order appearing at grazing incidence and occurred at a particular wavelength called <italic>Rayleigh wavelength</italic> and found close to Wood anomalies (Hessel and Oliner, <xref ref-type="bibr" rid="B30">1965</xref>). Thereby, anomalies were categorized as Rayleigh and Resonance, which both were used for filtering applications. The employment of such anomalies of grating structures in dielectric materials referred to the term: RWGs or GMRFs (Saarinen et al., <xref ref-type="bibr" rid="B75">2005</xref>). A diffraction grating consists of a periodic modulation of refractive index and guided mode resonance phenomena occurs when diffracted light from a diffraction grating couples with a leaky waveguide mode and satisfying phase-matching conditions, which results in a narrow linewidth peak at a particular wavelength that depends on a selectable range of optical parameters (Avrutskii et al., <xref ref-type="bibr" rid="B10">1985</xref>). In this section, we briefly discuss the role of ALD-grown thin films in the development of RWGs.</p>
</sec>
<sec id="S4-7-2">
<label>4.1.2</label> <title>Structure of a RWG</title>
<p>The structure of a RWG is shown in Figure <xref ref-type="fig" rid="F6">6</xref>A, which consists of a substrate with refractive index <italic>n</italic><sub>3</sub>, an integrated diffraction grating with refractive index distribution <italic>n</italic><sub>2</sub>(x) along <italic>x</italic>-direction and a medium from where light is incident (usually air) with refractive index <italic>n</italic><sub>1</sub>. Figure <xref ref-type="fig" rid="F6">6</xref>A shows the direction of various propagating diffraction orders and can be simply calculated from the Eq. <xref ref-type="disp-formula" rid="E6">(6)</xref> (Saleem, <xref ref-type="bibr" rid="B78">2012</xref>)
<disp-formula id="E6"><label>(6)</label><mml:math id="M6"><mml:msub><mml:mrow><mml:mi>n</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:mi mathvariant="italic">sin</mml:mi><mml:msub><mml:mrow><mml:mn>&#x003B8;</mml:mn></mml:mrow><mml:mrow><mml:mi>m</mml:mi></mml:mrow></mml:msub><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:msub><mml:mrow><mml:mi>n</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow></mml:msub><mml:mi mathvariant="italic">sin</mml:mi><mml:msub><mml:mrow><mml:mn>&#x003B8;</mml:mn></mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow></mml:msub><mml:mo class="MathClass-bin">&#x0002B;</mml:mo><mml:mi>m</mml:mi><mml:mn>&#x003BB;</mml:mn><mml:mi mathvariant="normal">&#x02215;</mml:mi><mml:mi>d</mml:mi><mml:mo class="MathClass-punc">,</mml:mo></mml:math>
</disp-formula> where <italic>d</italic> is grating period, &#x003BB; is wavelength of incident light, <italic>&#x003B8;</italic><sub>1</sub> is incident angle, <italic>m</italic>&#x02009;&#x0003D;&#x02009;0,&#x02009;&#x000B1;&#x02009;1,&#x02009;&#x000B1;&#x02009;2,&#x02009;&#x000B1;&#x02009;3,&#x02009;&#x02026; is the index of diffraction order, <italic>n</italic><sub>1</sub> and <italic>n</italic><sub>2</sub> are the refractive indices before and after the air-dielectric interface.</p>
<fig position="float" id="F6">
<label>Figure 6</label>
<caption>
<p><bold>(A)</bold> A schematic illustration of resonant waveguide grating with forward and backward diffraction [reproduced with permission (Saleem, <xref ref-type="bibr" rid="B78">2012</xref>)]. Copyright 2012, University of Eastern Finland. <bold>(B)</bold> SEM image of silicon slot structure coated by ALD-TiO<sub>2</sub> amorphous layer at 120&#x000B0;C. ALD-grown amorphous layer of TiO<sub>2</sub> on silicon slot structure [reproduced with permission (Alasaarela et al., <xref ref-type="bibr" rid="B7">2010</xref>)]. Copyright 2010, Optical Society of America. <bold>(C)</bold> Without and <bold>(D)</bold> with intermediate Al<sub>2</sub>O<sub>3</sub> layer [reproduced with permission (Alasaarela et al., <xref ref-type="bibr" rid="B7">2010</xref>)]. Copyright 2010, Optical Society of America. <bold>(E)</bold> SEM image of TiO<sub>2</sub> film on a silicon binary grating [reproduced with permission (Alasaarela et al., <xref ref-type="bibr" rid="B7">2010</xref>)]. Copyright 2010, Optical Society of America. <bold>(F)</bold> SEM image of TiO<sub>2</sub>-coated sinusoidal profile of Azo-polymer on a glass substrate [reproduced with permission (Alasaarela et al., <xref ref-type="bibr" rid="B6">2011b</xref>)]. Copyright 2011, Optical Society of America. <bold>(G)</bold> Cross-sectional view of SEM image of 300&#x02009;nm ALD-grown Al<sub>2</sub>O<sub>3</sub> film on Si wafer with trench structure [reproduced with permission (Ritala et al., <xref ref-type="bibr" rid="B71">1999</xref>)]. Copyright 1999, WILEY-VCH Verlag GmbH. <bold>(H)</bold> SEM image of an overcoated polymer grating [reproduced with permission (Weber et al., <xref ref-type="bibr" rid="B108">2012b</xref>)]. Copyright 2012, Elsevier. <bold>(I&#x02013;K)</bold> Si-slot waveguide structures, filling by ALD-TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> film and filling by nanolamintes of ALD-TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>, respectively [reproduced with permission (S&#x000E4;yn&#x000E4;tjoki et al., <xref ref-type="bibr" rid="B93">2011</xref>)]. Copyright 2011, Optical Society of America.</p></caption>
<graphic xlink:href="fmats-01-00018-g006.tif"/>
</fig>
</sec>
<sec id="S4-7-3">
<label>4.1.3</label> <title>ALD-growth in corrugated structures</title>
<p>Resonant waveguide gratings have been extensively studied since last couple of decades and several researchers fabricated RWG structures on various substrates employing ALD films to investigate their waveguiding properties, propagation losses, and fine tune the optical spectra (Alasaarela et al., <xref ref-type="bibr" rid="B7">2010</xref>, <xref ref-type="bibr" rid="B6">2011b</xref>; Saleem et al., <xref ref-type="bibr" rid="B76">2011a</xref>, <xref ref-type="bibr" rid="B83">2012a</xref>,<xref ref-type="bibr" rid="B86">d</xref>, <xref ref-type="bibr" rid="B88">2013a</xref>,<xref ref-type="bibr" rid="B89">b</xref>, <xref ref-type="bibr" rid="B79">2014a</xref>,<xref ref-type="bibr" rid="B81">c</xref>,<xref ref-type="bibr" rid="B82">d</xref>; Saleem, <xref ref-type="bibr" rid="B78">2012</xref>). The fabrication of silicon photonic nano-structures is established about a decade using state-of-the-art 198 or 248&#x02009;nm deep UV-lithographic techniques, which limit the structure size around 100 or 160&#x02009;nm, respectively. For Si-slot waveguides, the achieved feature size was below 100&#x02009;nm by partial filling with ALD-grown materials as well as to reduce the propagation losses (Alasaarela et al., <xref ref-type="bibr" rid="B8">2009</xref>, <xref ref-type="bibr" rid="B5">2011a</xref>; S&#x000E4;yn&#x000E4;tjoki et al., <xref ref-type="bibr" rid="B93">2011</xref>; Karvonen et al., <xref ref-type="bibr" rid="B41">2014</xref>). Figure <xref ref-type="fig" rid="F6">6</xref>B shows cross-section view of SEM image of a Si-slot waveguide coated by amorphous TiO<sub>2</sub> film with a smooth surface showing peak-to-peak surface roughness &#x0003C;0.4&#x02009;nm over an AFM measured area of 1&#x02009;&#x000D7;&#x02009;1&#x02009;&#x003BC;m (Alasaarela et al., <xref ref-type="bibr" rid="B7">2010</xref>).</p>
<p>Polycrystalline ALD-TiO<sub>2</sub> films grown at 350&#x000B0;C exhibit propagation losses due to grain boundaries that can be minimized by depositing an intermediate ALD-grown layer of Al<sub>2</sub>O<sub>3</sub> as shown in Figures <xref ref-type="fig" rid="F6">6</xref>B,C. As an example of conformal ALD-growth, RWG structure of a binary grating profile in fused silica substrate is coated by amorphous film of TiO<sub>2</sub> as shown in Figure <xref ref-type="fig" rid="F6">6</xref>D. Figures <xref ref-type="fig" rid="F6">6</xref>E,F show SEM images of TiO<sub>2</sub> films on a silicon binary grating and a sinusoidal grating profile fabricated on a hydrogen bonded polymer (Azobenzene Complex) that was spin coated on a glass substrate, respectively. The grating pattern was written using circularly polarized light of 488&#x02009;nm Ar<sup>&#x0002B;</sup> laser source of 300&#x02009;mW/cm<sup>2</sup> intensity to expose polymer. The fabricated polymer grating profile was coated with conformal TiO<sub>2</sub> thin film by ALD at 80&#x000B0;C to avoid thermal degradation (Alasaarela et al., <xref ref-type="bibr" rid="B6">2011b</xref>). Likewise, Figures <xref ref-type="fig" rid="F6">6</xref>G,H show the ALD conformal growth of Al<sub>2</sub>O<sub>3</sub> on high aspect ratio corrugated structures (Ritala et al., <xref ref-type="bibr" rid="B71">1999</xref>; Weber et al., <xref ref-type="bibr" rid="B107">2012a</xref>). In Figures <xref ref-type="fig" rid="F6">6</xref>I&#x02013;K silicon slot waveguide patterns to be filled by ALD-grown materials and the subsequent filling by ALD-Al<sub>2</sub>O<sub>3</sub> and ALD-TiO<sub>2</sub> in nano slots are shown, respectively. Moreover, the slots are filled as to demonstrate extremely uniform nanolaminate structure of five layers with 10&#x02009;nm of each ALD-Al<sub>2</sub>O<sub>3</sub> and ALD-TiO<sub>2</sub> with reduced propagation losses compared to crystalline ALD-TiO<sub>2</sub> films (Alasaarela et al., <xref ref-type="bibr" rid="B5">2011a</xref>).</p>
</sec>
<sec id="S4-7-4">
<label>4.1.4</label> <title>Propagation loss reduction with ALD-coated titanium dioxide thin films</title>
<p>The optical field in the waveguide structures must be confined and guided through with minimum field loss owing to controlled sidewall surface roughness without leakage into substrate that has been accompanied through uniform surface coatings of high index material(s). Alasaarela et al. (<xref ref-type="bibr" rid="B7">2010</xref>, <xref ref-type="bibr" rid="B5">2011a</xref>) have shown that such propagation losses due to surface roughness could be reduced by conformal coatings of ALD-TiO<sub>2</sub> films for which a further reduction in losses was measured by increasing film thickness. This attributes to increase in an effective index of waveguide to strongly confine the propagating waveguide modes and a significant reduction in surface roughness. Table <xref ref-type="table" rid="T1">1</xref> illustrates the values of waveguide losses (in decibels per centimeter) with an increase in the thickness of TiO<sub>2</sub> film. We recently studied, theoretically, the optical dispersion engineering properties of silicon-strip waveguides using ALD-TiO<sub>2</sub> films as overlayer on nano-structures (Erdmanis et al., <xref ref-type="bibr" rid="B20">2012</xref>).</p>
<table-wrap position="float" id="T1">
<label>Table 1</label>
<caption>
<p><bold>Propagation loss values of silicon slot waveguides as a function of ALD-TiO<sub>2</sub> film thickness</bold>.</p></caption>
<table frame="hsides" rules="groups">
<thead>
<tr>
<th align="center">ALD-TiO<sub>2</sub> thickness (nm)</th>
<th align="center">Propagation loss (dB/cm)</th>
</tr>
</thead>
<tbody>
<tr>
<td align="center">0</td>
<td align="center">&#x0007E;65</td>
</tr>
<tr>
<td align="center">20</td>
<td align="center">&#x0007E;14</td>
</tr>
<tr>
<td align="center">30</td>
<td align="center">&#x0007E;11</td>
</tr>
<tr>
<td align="center">50</td>
<td align="center">&#x0007E;07</td>
</tr>
<tr>
<td align="center"/>
</tr>
</tbody>
</table>
</table-wrap>
</sec>
<sec id="S4-7-5">
<label>4.1.5</label> <title>ALD-growth in nanoreplicated corrugated profiles</title>
<p>Low temperature ALD-growth is of much more importance for polymeric substrate waveguides in applications for various bio-molecular sensors and RWGs (Triani et al., <xref ref-type="bibr" rid="B101">2010</xref>; Magnusson et al., <xref ref-type="bibr" rid="B56">2011</xref>). Nanoimprint technology was proposed by (Chou et al., <xref ref-type="bibr" rid="B16">1997</xref>) in 1990s to fabricate replicated nano-structures. Transparent optical polymers have emerged as potential candidates in nanophotonic functional devices through replication in a wide variety of thermo-plastics (Herzig, <xref ref-type="bibr" rid="B29">1997</xref>; Jaszewski et al., <xref ref-type="bibr" rid="B37">1998</xref>; M&#x000F6;nkk&#x000F6;nen et al., <xref ref-type="bibr" rid="B58">2002</xref>; Liou and Chen, <xref ref-type="bibr" rid="B54">2006</xref>) using replication tools of high replication fidelity and resolution to fabricate high aspect ratio structures (Pietarinen et al., <xref ref-type="bibr" rid="B62">2007</xref>; Siitonen et al., <xref ref-type="bibr" rid="B96">2007</xref>; Cui, <xref ref-type="bibr" rid="B18">2008</xref>; Worgull, <xref ref-type="bibr" rid="B112">2009</xref>). Recently, we have demonstrated conformal growth of ALD technique to fill various sub-wavelength RWG structures. A silicon master stamp was fabricated using hydrogen silsesquioxane (HSQ) resist without Reactive Ion Etching (RIE) process, which employed as to replicate sub-wavelength grating structures with different periods in thermoplastic polymers as shown in Figures <xref ref-type="fig" rid="F7">7</xref>A,D (Saleem et al., <xref ref-type="bibr" rid="B85">2012c</xref>). The replicated grating structures in polycarbonate substrate with periods <italic>d</italic>&#x02009;&#x0003D;&#x02009;425 and 368&#x02009;nm are shown in Figures <xref ref-type="fig" rid="F7">7</xref>B,E and subsequently coated by thin amorphous films of ALD-TiO<sub>2</sub> as shown in Figures <xref ref-type="fig" rid="F7">7</xref>C,H. Likewise, the replication of corrugated profiles in other polymers such as COC and OrmoComp and their overlayer ALD-TiO<sub>2</sub> coatings are shown in Figures <xref ref-type="fig" rid="F7">7</xref>F,G and <xref ref-type="fig" rid="F7">7</xref>I,J, respectively. Figure <xref ref-type="fig" rid="F7">7</xref>K shows a replicated grating profile with period <italic>d</italic>&#x02009;&#x0003D;&#x02009;540&#x02009;nm, coated by 60&#x02009;nm of ALD-TiO<sub>2</sub> in applications of non-polarizing gratings (Saleem et al., <xref ref-type="bibr" rid="B87">2012e</xref>). A high aspect ratio replicated structure followed by ALD-growth is depicted in Figure <xref ref-type="fig" rid="F7">7</xref>L. Saleem et al. (<xref ref-type="bibr" rid="B77">2011b</xref>) used such replicated polymeric gratings as athermal bio-molecular sensors within accuracy of a fraction of a nanometer. Furthermore, such sub-wavelength replicated grating structures in various polymers were compared in terms of their resonance peak stability, efficiency, full width half maximum (FWHM), ease of fabrication, and residual stresses for their use in potential applications (Saleem et al., <xref ref-type="bibr" rid="B91">2013d</xref>). The interfacial adhesion of ALD-TiO<sub>2</sub> films on polycarbonate substrate has been demonstrated by theoretical models based on experimental measurements (Triani et al., <xref ref-type="bibr" rid="B102">2005</xref>; Latella et al., <xref ref-type="bibr" rid="B52">2007</xref>).</p>
<fig position="float" id="F7">
<label>Figure 7</label>
<caption>
<p><bold>(A)</bold> Si-stamp of RWG with period <italic>d</italic>&#x02009;&#x0003D;&#x02009;425&#x02009;nm by HSQ resist without reactive ion etching. <bold>(B)</bold> Nanoimprinted profile of RWG in polycarbonate substrate by Si-Stamp of <italic>d</italic>&#x02009;&#x0003D;&#x02009;425&#x02009;nm. <bold>(C)</bold> Replicated grating profile coated by thin amorphous layer of ALD-TiO<sub>2</sub>. <bold>(D)</bold> Si-stamp of sub-wavelength RWG with period <italic>d</italic>&#x02009;&#x0003D;&#x02009;325&#x02009;nm by HSQ resist. <bold>(E)</bold> Replicated grating profile in polycarbonate. <bold>(F)</bold> Replicated grating profile in COC. <bold>(G)</bold> Replicated grating profile in OrmoComp. <bold>(H)</bold> Replicated grating profile in polycarbonate (<italic>d</italic>&#x02009;&#x0003D;&#x02009;368&#x02009;nm) coated by thin amorphous layer of ALD-TiO<sub>2</sub>. <bold>(I)</bold> Replicated grating profile in COC (<italic>d</italic>&#x02009;&#x0003D;&#x02009;325&#x02009;nm) coated by thin amorphous layer of ALD-TiO<sub>2</sub>. <bold>(J)</bold> Replicated grating profile in OrmoComp (<italic>d</italic>&#x02009;&#x0003D;&#x02009;325&#x02009;nm) coated by thin amorphous layer of ALD-TiO<sub>2</sub>. <bold>(K)</bold> Replicated grating profile in polycarbonate (<italic>d</italic>&#x02009;&#x0003D;&#x02009;540&#x02009;nm) coated by thin amorphous layer of ALD-TiO<sub>2</sub> for non-polarizing properties. <bold>(L)</bold> Replicated grating profile in polycarbonate coated by thin amorphous layer of ALD-TiO<sub>2</sub> showing high aspect ratio structure.</p></caption>
<graphic xlink:href="fmats-01-00018-g007.tif"/>
</fig>
</sec>
<sec id="S4-7-6">
<label>4.1.6</label> <title>Effect of thickness of TiO<sub>2</sub> films on replicated structures</title>
<p>A filtering design is recently proposed by Saleem et al. (<xref ref-type="bibr" rid="B80">2014b</xref>) with its real experimental demonstration to present the influence of ALD-TiO<sub>2</sub> thickness layer on replicated nanostrcutures of RWGs. Polymeric rectangular grating profile with a ridge height <italic>h</italic>&#x02009;&#x0003D;&#x02009;120&#x02009;nm, period <italic>d</italic>&#x02009;&#x0003D;&#x02009;425&#x02009;nm, ridge width <italic>w</italic>&#x02009;&#x0003D;&#x02009;268&#x02009;nm, and duty cycle <italic>ff</italic>&#x02009;&#x0003D;&#x02009;<italic>w</italic>/<italic>d</italic>&#x02009;&#x0003D;&#x02009;0.63 was covered by a thin dielectric TiO<sub>2</sub> cover layer of thicknesses <italic>t</italic>&#x02009;&#x0003D;&#x02009;60 and 75&#x02009;nm, grown by ALD. The device was illuminated by a linearly polarized plane wave (TE polarization) from air at an angle of incidence <italic>&#x003B8;<sub>i</sub></italic>&#x02009;&#x0003D;&#x02009;20&#x000B0; and the specularly reflection was obtained at <italic>&#x003B8;<sub>o</sub></italic>&#x02009;&#x0003D;&#x02009;20&#x000B0;. Figure <xref ref-type="fig" rid="F8">8</xref>A shows the calculated field at TiO<sub>2</sub> thicknesses of 60 and 75&#x02009;nm and Figure <xref ref-type="fig" rid="F8">8</xref>B shows the simulated results by Fourier Modal Method (FMM) to predict spectral shift at (100%) maximum reflectance as a function of variation in waveguide thickness (TiO<sub>2</sub> layer). A spectral shift of &#x0007E;28&#x02009;nm was calculated theoretically with an increase in ALD-TiO<sub>2</sub> thickness by &#x0007E;15&#x02009;nm. Experimental measurements show specular reflectance resonance peaks at wavelengths 827 and 851&#x02009;nm for <italic>t</italic> values of 60 and 75&#x02009;nm, respectively as shown in Figure <xref ref-type="fig" rid="F8">8</xref>C. Such spectral shifts are attributed to increase in effective refractive index of waveguide, which result in an interaction of grating structure at longer wavelengths to originate resonance. Furthermore, simulated and experimentally measured results show slightly different spectral locations, which may arise due to surface roughness, true refractive indices of materials, structure linewidths, and slight variations in the periodicity after a number of fabrication steps (Saleem et al., <xref ref-type="bibr" rid="B77">2011b</xref>).</p>
<fig position="float" id="F8">
<label>Figure 8</label>
<caption>
<p><bold>(A)</bold> Simulated spectra of replicated RWGs with ALD-TiO<sub>2</sub> thickness of <italic>t</italic>&#x02009;&#x0003D;&#x02009;60 and 75&#x02009;nm. <bold>(B)</bold> Calculated field at <italic>t</italic>&#x02009;&#x0003D;&#x02009;60 and 75&#x02009;nm. <bold>(C)</bold> Experimentally measured spectra of RWGs with <italic>t</italic>&#x02009;&#x0003D;&#x02009;60 and 75&#x02009;nm.</p></caption>
<graphic xlink:href="fmats-01-00018-g008.tif"/>
</fig>
</sec>
</sec>
<sec id="S4-8">
<label>4.2</label> <title>ALD-Growth in nanoplasmonics</title>
<p>Metallic nanoparticles have a number of valuable optical properties derived from their ability to collectively support the light-induced electronic oscillations to harness electromagnetic surface waves called, as surface plasmon polaritons (SPPs). SPPs are density fluctuations of conduction electrons in metals and propagate along metal surface with exponentially decaying evanescent field perpendicular to the metal-dielectric interface (Ritchie, <xref ref-type="bibr" rid="B73">1957</xref>) and extend &#x0007E;100&#x02013;300&#x02009;nm for visible light (Wei and Xu, <xref ref-type="bibr" rid="B109">2014</xref>). SPPs have attractive features with metallic nanogaps, nanoholes, nanotips, nanoapertures, nanowires, or nanoparticles and concentrate optical field to nanoscale volumes and allow fundamental study of light&#x02013;matter interactions at length scales, which were not accessible otherwise (Brongersma and Shalaev, <xref ref-type="bibr" rid="B13">2010</xref>). Moreover, owing to sharp corners of engineered nano-structures, another important class of localized plasmon wave, which confines optical energy in a more tightly fashion at a relatively shorter decay length of 10&#x02013;50&#x02009;nm called, localized surface plasmons (LSPs) as shown in Figure <xref ref-type="fig" rid="F9">9</xref>A (Im et al., <xref ref-type="bibr" rid="B35">2012</xref>) and likewise to SPPs confine maximum optical energy at metallic surfaces.</p>
<fig position="float" id="F9">
<label>Figure 9</label>
<caption>
<p><bold>(A)</bold> Propagating SPPs and LSPs with evanescent field decaying length [reproduced with permission (Im et al., <xref ref-type="bibr" rid="B35">2012</xref>)]. Copyright 2012, Materials Research Society. <bold>(B)</bold> SEM image of plasmonic structure with nanohole array on Au film with size 180&#x02009;nm in diameter and 500&#x02009;nm periodicity. <bold>(C)</bold> Same structure in <bold>(B)</bold> coated by ALD-Al<sub>2</sub>O<sub>3</sub>. <bold>(D)</bold> Schematic profile of ideal structure. <bold>(E)</bold> SEM image of cross-sectional view of nanoplasmonic structure. <bold>(F&#x02013;I)</bold> Simulation results of maximum resonance and minimum transmission of Au- and Ag-nanohole array to show wavelength shift as a function of ALD-Al<sub>2</sub>O<sub>3</sub> thickness. <bold>(J)</bold> Simulation results of FDTD to show maximum optical power distribution as a function of varying refractive index of surrounding region. <bold>(K)</bold> Simulation results of FDTD to show maximum optical power distribution as a function of varying ALD-Al<sub>2</sub>O<sub>3</sub> thickness [<bold>(B&#x02013;K)</bold> Reproduced with permission (Im et al., <xref ref-type="bibr" rid="B34">2010</xref>)]. Copyright 2010, American Chemical Society.</p></caption>
<graphic xlink:href="fmats-01-00018-g009.tif"/>
</fig>
<p>Surface plasmon polaritons arise due to coupling between photons and conduction electrons, thereby, carrying higher momentum than free-space light. The momentum of light can be enhanced by illuminating a thin metallic film through a prism or strong grating coupling of patterned metallic surfaces (Raether, <xref ref-type="bibr" rid="B68">1986</xref>).</p>
<sec id="S4-8-7">
<label>4.2.1</label> <title>ALD-Passive layer on metallic nanoplasmonic structures</title>
<p>ALD-grown nano-overlayers on metallic nanoplasmonic structures not only protect surface but also enhance the optical transmission. In most plasmonic devices operating at visible or infrared regimes, Ag or Au metals are used. At wavelengths below 600&#x02009;nm, Ag has low ohmic losses, higher propagation lengths (low SPPs damping), higher sensitivity for biosensors, and are used in applications where a direct interface with biological molecules is not required, such as electrodes for plasmonic solar cells (Atwater and Polman, <xref ref-type="bibr" rid="B9">2010</xref>). Silver Ag is used due to cost-effective solutions, better optical properties and relatively strong interfacial adhesion with glass substrates than Au (Ferry et al., <xref ref-type="bibr" rid="B21">2008</xref>; Lindquist et al., <xref ref-type="bibr" rid="B53">2008</xref>). Despite these advantages, Ag has lower chemical stability and readily oxidized in the air and shows a reduction in optical intensity in nanoplasmonic structures without passive layer (Im et al., <xref ref-type="bibr" rid="B34">2010</xref>). While the Ag surfaces can be protected and improved in functionality by an overlayer of dielectric coating (&#x0007E;10&#x02013;20&#x02009;nm), which must be less than mean decay length of SPPs in order to annul from being absorption of SP field in thicker layers.</p>
<p>These ultra-thin barrier films must be dense, pinhole free, encapsulate the patterned structure entirely (Saleem et al., <xref ref-type="bibr" rid="B90">2013c</xref>) and grown at a low deposition temperature to avoid degrading or oxidizing of underlying Ag film. Similarly, the use of silver nanoparticles coated by &#x0007E;1&#x02009;nm Al<sub>2</sub>O<sub>3</sub> layer was investigated to preserve plasmon resonance peak after annealing at 500&#x000B0;C and have shown to degrade resonance peaks without Al<sub>2</sub>O<sub>3</sub> layer even at annealing temperature of 200&#x000B0;C (Whitney et al., <xref ref-type="bibr" rid="B110">2007</xref>). Likewise, Sung et al. (<xref ref-type="bibr" rid="B98">2008</xref>) showed enhanced thermal stability of Al<sub>2</sub>O<sub>3</sub> coated silver nanoparticles against high power femtosecond laser. Self-assembly based plasmonic arrays tuned by minimum thickness of ALD fabricated (&#x0003C;20&#x02009;nm) Au dots achieved enhanced visible light absorption per volume-equivalent thickness in applications including conversion of solar energy into electrical power (H&#x000E4;gglund et al., <xref ref-type="bibr" rid="B28">2013</xref>). One of the possible reason of enhancing optical transmission is conformal and precisely uniform deposition of dielectric thin films on nano-structures is its predominance over rough topographies.</p>
</sec>
<sec id="S4-8-8">
<label>4.2.2</label> <title>Tuning local refractive index of nanoplasmonic structures</title>
<p>The plasmonic resonance depends on the geometric parameters, incident angle, or wavelength, surrounding environmental conditions (dielectric constants), molecular layer bindings or adsorption, surface roughness, and the thickness of an overlayer on the metallic nano-structures. A change in any one of these parameters modify the resonance properties and ultimately shifts the resonance peak. Figure <xref ref-type="fig" rid="F9">9</xref>B shows an SEM image of nanohole array structure fabricated on Au (with 5&#x02009;nm Cr adhesive layer) metallic film of 200&#x02009;nm thickness by Focused Ion Beam with a period of 500&#x02009;nm and hole diameter of 180&#x02009;nm. A schematic of a nanoplasmonic structure coated by ALD-Al<sub>2</sub>O<sub>3</sub> is shown in Figure <xref ref-type="fig" rid="F9">9</xref>D while top and cross-sectional views of SEM images of ALD-Al<sub>2</sub>O<sub>3</sub> overlayer on metallic nanohole array are shown in Figures <xref ref-type="fig" rid="F9">9</xref>B,C and Figure <xref ref-type="fig" rid="F9">9</xref>E, respectively. Since, the ALD-Growth fills the nanoholes conformably and gives rise resonance spectral shifts as a result of tuning effective index seen by SPs, which is approximated by a simple model (Jung et al., <xref ref-type="bibr" rid="B39">1998</xref>):
<disp-formula id="E7"><label>(7)</label><mml:math id="M7"><mml:msub><mml:mrow><mml:mi>n</mml:mi></mml:mrow><mml:mrow><mml:mtext>eff</mml:mtext></mml:mrow></mml:msub><mml:mo class="MathClass-rel">&#x0003D;</mml:mo><mml:msub><mml:mrow><mml:mi>n</mml:mi></mml:mrow><mml:mrow><mml:mtext>bulk</mml:mtext></mml:mrow></mml:msub><mml:mo class="MathClass-bin">&#x0002B;</mml:mo><mml:mfenced separators="" open="(" close=")"><mml:mrow><mml:msub><mml:mrow><mml:mi>n</mml:mi></mml:mrow><mml:mrow><mml:mtext>film</mml:mtext></mml:mrow></mml:msub><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:msub><mml:mrow><mml:mi>n</mml:mi></mml:mrow><mml:mrow><mml:mtext>bulk</mml:mtext></mml:mrow></mml:msub></mml:mrow></mml:mfenced><mml:mfenced separators="" open="[" close="]"><mml:mrow><mml:mn>1</mml:mn><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:msup><mml:mrow><mml:mi>e</mml:mi></mml:mrow><mml:mrow><mml:mrow><mml:mo class="MathClass-open">(</mml:mo><mml:mrow><mml:mo class="MathClass-bin">&#x02212;</mml:mo><mml:mn>2</mml:mn><mml:mi>t</mml:mi><mml:mi mathvariant="normal">&#x02215;</mml:mi><mml:mi>l</mml:mi></mml:mrow><mml:mo class="MathClass-close">)</mml:mo></mml:mrow></mml:mrow></mml:msup></mml:mrow></mml:mfenced><mml:mo class="MathClass-punc">,</mml:mo></mml:math>
</disp-formula> where <italic>n</italic><sub>bulk</sub> and <italic>n</italic><sub>film</sub> are the refractive indices of the surrounding bulk materials and thin deposited film, respectively, <italic>t</italic> is the thickness of the film and <italic>l</italic> is the decay length of SPs evanescent field perpendicular to the surface. It can be seen from Eq. <xref ref-type="disp-formula" rid="E7">(7)</xref> that as the thickness <italic>t</italic> of Al<sub>2</sub>O<sub>3</sub> film increases, effective index increases from <italic>n</italic><sub>bulk</sub> to <italic>n</italic><sub>film</sub>, which results in a red-shift: here <italic>n</italic><sub>bulk</sub> is air index and <italic>n</italic><sub>film</sub> is Al<sub>2</sub>O<sub>3</sub> index. Thereby, by varying <italic>t</italic> one can tune the resonance frequency of SPs precisely, since ALD grows films up to angstrom scale resolution. Furthermore, an increase in the <italic>t</italic> results in higher intensity that might be attributed to low SPs damping at relatively longer wavelengths as well as an increase in the periodicity of the structure reported by Przybilla et al. (<xref ref-type="bibr" rid="B65">2006</xref>). Furthermore, filling of nanoholes by ALD-Al<sub>2</sub>O<sub>3</sub> not only results in higher effective index and reduction in waveguide-like attenuation of sub-wavelength structures for optical transmission enhancement but also encompasses index matching on both sides of the film. Thus, making an asymmetric peak to symmetric one with a transformation of (air&#x02013;metal&#x02013;glass) interfaces to (air&#x02013;alumina&#x02013;metal&#x02013;glass) that boost optical transmission at a certain Al<sub>2</sub>O<sub>3</sub> thickness where SPs wave sees almost a similar index above and below metallic structures (Krishnan et al., <xref ref-type="bibr" rid="B49">2001</xref>).</p>
</sec>
<sec id="S4-8-9">
<label>4.2.3</label> <title>Effect of Al<sub>2</sub>O<sub>3</sub> thickness on spectral shifts</title>
<p>The effects of Al<sub>2</sub>O<sub>3</sub> thickness on the spectral shifts have been investigated by theoretical calculations using 3D Finite Difference Time Domain (FDTD) simulations and compared with experimental results, not shown here [see Im et al. (<xref ref-type="bibr" rid="B34">2010</xref>)]. Figures <xref ref-type="fig" rid="F9">9</xref>F,G show a comparison of calculated results with ALD-Al<sub>2</sub>O<sub>3</sub> deposition with a step of 6 and 10&#x02009;nm on gold sample, respectively and white dashed lines depict resonance maxima and transmission minima. An increase in ALD-Al<sub>2</sub>O<sub>3</sub> thickness not only results in red-shift but also increases transmission intensity by a factor of about 5 at certain thickness value. Likewise, Ag-nanohole arrays show the calculated results and their consistency with experimentally measured ones, as seen in Figures <xref ref-type="fig" rid="F9">9</xref>H,I.</p>
<p>3D FDTD simulations were carried out to validate the optical field distribution in each nanohole as a function of index matching on top and bottom sides of metallic films. In these simulations the bulk refractive index over nanohole arrays is varied from 1.35 to 1.55. Figure <xref ref-type="fig" rid="F9">9</xref>J shows that the maximum transmitted field intensity and output power occurs when the <italic>n</italic><sub>bulk</sub> above and inside of each nanohole matches to that of the glass substrate with index 1.45 and Krishnan et al. (<xref ref-type="bibr" rid="B49">2001</xref>) demonstrated that under such symmetric conditions optical transmission enhances by a factor of 10 compared to asymmetric interfaces. Figure <xref ref-type="fig" rid="F9">9</xref>K shows FDTD calculated results of filed distributions in nanohole arrays for different values of Al<sub>2</sub>O<sub>3</sub> overlayer by considering the refractive indices of glass and alumina 1.45 and 1.65, respectively. At symmetric condition one expects that the effective index seen by the SP waves approximately matches to that of substrate (glass) and maximum electromagnetic power distribution occurs at certain thickness value of <italic>t</italic>&#x02009;&#x0003D;&#x02009;60&#x02013;70&#x02009;nm. Hence, ALD overlayer can tune and shift transmission spectrum in a precisely and controlled manner, which is of significant importance in biochemical sensing, surface plasmon resonance imaging (Chinowsky et al., <xref ref-type="bibr" rid="B15">2004</xref>), biomimetic sensing, and membrane protein research.</p>
</sec>
</sec>
</sec>
<sec id="S5">
<label>5</label> <title>Conclusion</title>
<p>Due to continuous device miniaturization, precise control of thin film growth is essential at the atomic level to fabricate nano-optical and semiconductor devices. To target such requirements, ALD methods have been developed for the growth of ultra-thin and highly conformal and uniform films. ALD is a vapor phase technique based on sequential and self-limiting growth on functional surfaces as well as on substrates with high aspect ratios after chemical reactions. The use of ALD deposited optical materials such as TiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> in nanophotonic devices are discussed.</p>
<p>Atomic layer deposition is capable of smooth and uniform deposition on a wide variety of organic and inorganic materials in a number of high-Tech applications including bio-molecular sensors, biomimetic sensing, membrane proteins, nanophotonic and microelectronic devices. ALD coatings can conformably fill the PC of metallic nanohole arrays that increases the extraordinary optical transmission of plasmonic structures and to reduce the feature size of the silicon waveguides and propagation losses. The increase in ALD-TiO<sub>2</sub> thickness results in a further reduction in propagation losses in Si-slot waveguides and increase in transmission through plasmonic structures due to increase in effective index of the structures. The low deposition rate of ALD is extremely important to deposit high density, high quality, and uniform thin films in microelectronics industry as high-k gate oxide thin barrier layers as well as to propagate evanescent modes with relatively longer decay lengths in photonics. The low temperature growth enables and emerges ALD as a unique technique to deposit coatings on polymer substrates, temperature sensitive materials, and bio-molecular materials to avoid their degradation. ALD-growth on several substrates also promises to protect the underneath surfaces/structures from environmental effects due to extremely low penetration through high density and pinhole free films.</p>
<p>The future prospects of ALD are very promising. ALD should also play an integral role in new paradigms for optical materials in nanophotonics. The number of applications for ALD also continues to grow outside of the semiconductor arena. The future should see ALD continue to expand into new areas and find additional applications and challenges in demanding protective coatings, microelectromechanical systems, nanoelectronics, solar cells etc., that benefit from its precise thickness control and conformality.</p>
</sec>
<sec id="S6">
<title>Conflict of Interest Statement</title>
<p>The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.</p>
</sec>
</body>
<back>
<ack>
<p>Financial support from Strategic funding Initiative TAILOR of the University of Eastern Finland, Academy of Finland, Tekes (Finland), Higher Education Commission (HEC), USAID Center for Advance Studies, CES, NUST, (Pakistan) are greatly appreciated.</p>
</ack>
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