AUTHOR=Liu Chunlei , Ma Guokun , Zeng Junpeng , Tan Qiuyang , Zhang Ziqi , Chen Ao , Liu Nengfan , Wan Houzhao , Wang Baoyuan , Tao Li , Rao Yiheng , Shen Liangping , Wang Hanbin , Zhang Jun , Wang Hao TITLE=Research on Improving the Working Current of NbOx-Based Selector by Inserting a Ti Layer JOURNAL=Frontiers in Materials VOLUME=Volume 8 - 2021 YEAR=2021 URL=https://www.frontiersin.org/journals/materials/articles/10.3389/fmats.2021.716065 DOI=10.3389/fmats.2021.716065 ISSN=2296-8016 ABSTRACT=

To achieve the highest possible integration storage density in the V-point structure, the working current of the selector in the one-selection one-resistance (1S1R) structure should match with the resistance random access memory (RRAM). In this study, a selector device is designed with a Ti/NbOx/Ti/Pt structure through the magnetron sputtering method and achieves excellent performance of threshold switching under ultra-large compliance current (CC) up to 100 mA. Furthermore, both the switching voltages and the OFF-state resistance of the device demonstrate excellent stability even when CC is increased to a milliampere level, attributed from the existence of metallic NbO in the switching layer. This study provides evidence that a Ti/NbOx/Ti/Pt device has a great potential to drive RRAM in the V-point structure.