AUTHOR=Ai Likun , Tian Fangkun , Xu Anhuai , Huang Hua , Qi Ming 

TITLE=Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT

JOURNAL=Frontiers in Materials

VOLUME=Volume 9 - 2022

YEAR=2022

URL=https://www.frontiersin.org/journals/materials/articles/10.3389/fmats.2022.980077

DOI=10.3389/fmats.2022.980077

ISSN=2296-8016

ABSTRACT=In this paper, The InxAl1-xAs graded buffer was inserted between the InAlAs buffer layer and the pseudomorphic In0.66Ga0.34As channel layer to improve material quality in channel. The results show that the InxAl1-xAs graded buffer layer with 50nm thickness can obtain a good heterojunction interface and the root mean square (RMS) of 0.154nm. The two dimensional electron gas (2-deg) mobility and concentration were 8570cm2/Vs and 2.7×1012cm-2 at 300K, respectively. InxAl1-xAs graded buffer layer can enhance the interface quality and the electrical performance through releasing the interface strain caused by pseudomorphic In0.52Al0.48As/In0.66Ga0.34As HEMT. This study shows great potentials by incorporating InxAl1-xAs graded buffer layer in pseudomorphic InP HEMT materials to improve the properties of devices.