AUTHOR=Du Wei , Thai Quang M. , Chrétien Jeremie , Bertrand Mathieu , Casiez Lara , Zhou Yiyin , Margetis Joe , Pauc Nicolas , Chelnokov Alexei , Reboud Vincent , Calvo Vincent , Tolle John , Li Baohua , Yu Shui-Qing 

TITLE=Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures

JOURNAL=Frontiers in Physics

VOLUME=Volume 7 - 2019

YEAR=2019

URL=https://www.frontiersin.org/journals/physics/articles/10.3389/fphy.2019.00147

DOI=10.3389/fphy.2019.00147

ISSN=2296-424X

ABSTRACT=Silicon-based monolithic laser has long been desired.  Recent demonstration of lasing from direct bandgap group-IV alloy GeSn has opened a completely new venue from the traditional approach of III-V integration on Si.  In this paper, high-quality GeSn samples were grown using a multiple-step Sn-enhanced growth recipe with a Sn composition as high as ~20.0%.  The GeSn lasers based on waveguide Fabry-Pérot and micro-disk cavities have been fabricated and characterized.  The ridge waveguide features better local heat dissipation while the micro-disk offers stronger optical confinement as well as strain relaxation.  The maximum operating temperature of 260 K from a waveguide laser and a threshold of 108 kW/cm2 at 15 K from a micro-disk laser were achieved.  The peak lasing wavelength was obtained up to 3.5 µm with a 100-µm-wide ridge waveguide laser.