AUTHOR=Zhang Jia-Xin , Wang Wei , Li Zai-Bo , Ye Hai-Feng , Huang Run-Yu , Hou Ze-Peng , Zeng Hui , Zhu Hong-xia , Liu Chen , Yang Xue-Yan , Shi Yan-Li 

TITLE=Development of a High Performance 1280×1024 InGaAs SWIR FPA Detector at Room Temperature

JOURNAL=Frontiers in Physics

VOLUME=Volume 9 - 2021

YEAR=2021

URL=https://www.frontiersin.org/journals/physics/articles/10.3389/fphy.2021.678192

DOI=10.3389/fphy.2021.678192

ISSN=2296-424X

ABSTRACT=The 1280×1024 In0.53Ga0.47As short wave infrared (SWIR)focal plane arrays (FPAs) detector with planar-type back illuminated process have been fabricated. With indium bump flip chip bonding techniques, the InGaAs photodiode arrays (PDAs) were hybrid- integrated to the CMOS Readout Integrated Circuit (ROIC) with Correlated Double Sampling (CDS). The response spectral is 0.9μm-1.7μm. The test results show that the dark current density is 2.25nA/cm2 at 25℃, the detectivity D*is up to 1.1× 1013cm · Hz1 / 2 / W and the noise electron is as low as 48e- under CDS mode, the quantum efficiency (QE) is 88% at 1550nm, and the operability is more than 99.9%. Moreover, the dark current and noise electron have been studied theoretically in depth. The results indicate that the diffusion current is the main contribution of the dark current, and the ROIC noise electron is the main source of FPAs noise.