AUTHOR=Addison M. , Bellora A. , Borgato F. , Brundu D. , Cardini A. , Cossu G. M. , Dalla Betta G. F. , La Delfa L. , Lai A. , Lampis A. , Loi A. , Obertino M. M. , Vecchi S. , Verdoglia M. 

TITLE=Characterisation of 3D trench silicon pixel sensors irradiated at 1⋅1017 1 MeV neqcm-2

JOURNAL=Frontiers in Physics

VOLUME=Volume 12 - 2024

YEAR=2024

URL=https://www.frontiersin.org/journals/physics/articles/10.3389/fphy.2024.1497267

DOI=10.3389/fphy.2024.1497267

ISSN=2296-424X

ABSTRACT=The 3D trench silicon pixel sensors developed by the TimeSPOT collaboration have demonstrated exceptional performance, even after exposure to extreme radiation fluences up to 1⋅1017 1 MeV neq/cm2. This study assesses the radiation tolerance of these sensors using minimum ionizing particles during a beam test campaign. The results indicate that while radiation damage reduces charge collection efficiency and overall detection efficiency, these losses can be mitigated to levels comparable to non-irradiated sensors by increasing the reverse bias voltage. Charge multiplication was observed and characterised for the first time in 3D trench sensors, revealing a distinct operating regime post-irradiation achievable at bias voltages close to 300 V. Additionally, the timing performance of irradiated sensors remains comparable to their non-irradiated counterparts, underscoring their resilience to radiation damage. Currently, 3D trench silicon detectors are among the fastest and most radiation-hard pixel sensors available for vertex detectors in high-energy physics colliders. These findings highlight the potential of these sensors for new 4D tracking systems of future experiments at the Future Circular Hadron Collider (FCC-hh), advancing the capabilities of radiation-hard sensor technology.