Abstract
The noteworthy, astonishing, and remarkable electronic properties of graphene make it a reliable material for the fabrication of downscaled and high-frequency devices in the next and future generations. In this research work, the design approach of a graphene-based metal-oxide semiconductor high-electron-mobility transistor (MOS-HEMT) using the Silvaco ATLAS simulation tool is demonstrated, in which undoped graphene is used as the channel material, and graphene oxide (GO) functions as the oxide layer. It is investigated that at a particular threshold voltage VT = 1 V, the value of drain current (Id) is 1,280 mA, which demonstrates a twofold enhancement compared to GaN-based MOS-HEMTs. Several appealing characteristics, such as transconductance variation vs. change in gate-to-source voltage (Vgs), carrier mobility variation with different operating temperatures, and device transfer characteristics, are also explored. Accordingly, the obtained and accomplished technical evaluation and assessment of the outcomes validate that graphene could be most suitable for designing next-generation power electronics devices.
1 Introduction
With the advent of nanotechnology and upgraded microelectronics, graphene is driving a paradigm shift in the semiconductor industry. Owing to its exceptional electronic, mechanical, and thermal properties, it presents numerous opportunities for the development of next-generation electronic devices. Graphene is a two-dimensional (2D) material composed of a single layer of carbon atoms arranged in an sp2 hybridized configuration. It exhibits a honeycomb lattice structure, with a carbon–carbon bond length of 1.42 Å []. It has various applications in the field of electronic devices, energy storage in batteries and super-capacitors [] because of its unique electronic properties such as zero band gap, Dirac fermion behavior of its electrons, and low density of state [, ]. Graphene behaves as a metal due to its zero band gap, and it also behaves as a semiconductor because of the presence of a band gap around the Fermi energy level [, ].
Recently, metal-oxide semiconductor field-effect transistors (MOSFETs) have evolved significantly due to scaling limits of planar devices []. The AlGaN/GaN on a Si/Sapphire/SiC substrate plays an important role in the power electronics devices arena [–]. These AlGaN/GaN-based devices are widely used in the next-generation wireless base stations and power switching devices []. Among all these AlGaN/GaN-based devices, HEMTs are a promising device for high-power amplifier design as they have a wide band gap, high breakdown voltage, high electron mobility, and extraordinary temperature and radiation performance characteristics [–]. Various techniques, such as gate recess [–], p-type III-nitride gate [, ], and fluorine plasma ion implantation [], have been used to introduce the implementation and operation of AlGaN/GaN-based heterojunction MOS devices. Although these techniques have several advantages in achieving progress in fabrication, there are also many limitations. The gate recess technique unevenly lowers the VT non-uniformly across the wafer due to fewer etch-stop layers on the GaN and reduces electron mobility due to etch damage of the barrier [, ].
Previous work presents the details of high-performance enhancement-mode GaN metal insulator semiconductor high-electron-mobility transistor (MIS-HEMT) devices with VT = 3 V, but this literature does not provide any information on device simulations for low VT. Also, the high-performance enhancement-mode or normally-off AlGaN/GaN fin-MOSHEMTs on a Si substrate with various fin widths (100–210 nm) with significant VT were demonstrated to increase the drain current of the device, but the characteristics were not remarkable.
Accounting for the previous research and implementing the semiconducting properties of graphene, the significant contribution of this investigation is as follows:
A novel MOS-HEMT is designed using graphene oxide (GO) as the gate oxide layer and graphene as the semiconducting cap layer and channel.
The output and transfer characteristics are demonstrated at VT = 1 V.
The drain current of graphene-based MOS-HEMT is calculated.
The variation in transconductance and mobility due to changes in gate-to-source voltage and temperature, respectively, is demonstrated.
2 Device design approach
Figure 1 shows a graphene-based gallium nitrate MOS-HEMT structure, which is a promising candidate for the fabrication of high-power source devices because of its extraordinary properties, such as higher conductivity, high carrier mobility, and better connectivity with other materials. The graphene epitaxial layer was grown on a sapphire substrate with sheet resistance of ∼400 Ω/cm3. The n-type barrier layer of GaN and the cap layer of graphene with a doping density of 1 × 1019cm3 can be used to eliminate the effect of electron collapse produced by the injection of electrons at the source and drain surfaces. The structure consists of a 20-nm GaN barrier, a 10-nm graphene cap layer, and a 2-μm-thick graphene channel. A layer of 500-nm-thick GO can be deposited on a doped graphene semimetal by using the chemical vapor deposition (CVD) technique. The design approach of this device can be done with the mesa isolation process that is used due to its ease of accessibility, as it can pattern the semiconductor into islands using masking. Then, Ohmic contacts can be fabricated by the deposition of Al/Ti/Au/Ni (100/20/500/40 nm) by the rapid thermal annealing (850 °C) process for 1 min in N2 ambient. In this configuration, Ti serves as an adhesion layer and facilitates efficient carrier injection at the graphene interface due to its favorable work function. Al further enhances Ohmic behavior by reducing the effective barrier height and promoting low-resistance electron transport. The Ni layer functions as a diffusion barrier, improving thermal stability. Au provides a highly conductive and chemically stable top contact suitable for interconnection. Finally, for gate metal, Ni/Au (70/30 nm) can be deposited, followed by the lift-off process. The resistance of the Ohmic contact lies between 0.3 Ω mm and 0.5 Ω mm.
FIGURE 1
The proposed device was developed using the Silvaco TCAD simulation platform, employing various physical models to analyze the output characteristics. These models include the Shockley–Read–Hall recombination model, along with the FLDMOB and CONMOB mobility models. The electron and hole concentrations are incorporated into the self-consistent solution of the Poisson equation and Schrödinger equation to determine the electrostatic potential. The self-consistent solution is achieved using the Newton–Raphson method. The integration of these models enables a comprehensive evaluation of device performance and provides deeper insight into its electrical behavior.
3 Results and discussion
Figure 2 illustrates the direct current (DC) output characteristics (Id–Vds) of a MOS-HEMT, plotted for different values of gate-to-source voltages. The current through the MOS-HEMT will be zero until the value of Vgs exceeds the threshold voltage VT, because in this condition, the device will not form a channel that connects the drain and source terminals. Keeping the threshold voltage constant at VT = 1 V, the value of Vds sweeps from 0 to 10 V, and Vgs is stepped from 4 V to 7 V, with a step of 1 V. The ID,MAX is obtained as 1,280 mA for the graphene-based MOS-HEMT.
FIGURE 2
Figure 3 shows the transfer characteristics (Id–Vgs) of a graphene-based MOS-HEMT. The critical parameters, such as the Ion/Ioff ratio and the value of on-current, can be used in the simulation of nano-devices. The magnitude of the Ion/Ioff ratio of the graphene-based MOS-HEMT is calculated as 256,000. This ratio is much higher than that of GaN-based MOS-HEMT and MOSFET. It signifies that the current obtained in graphene-based MOS-HEMT is much higher than that of GaN-based MOS-HEMT.
FIGURE 3
Figure 4 shows the variation in the magnitude of transconductance (gm) with different values of gate-to-source voltage (Vgs). The plot indicates that the transconductance varies linearly with a change in Vgs, keeping a threshold voltage constant at VT = 1 V. Transconductance increases with an increase in gate-to-source voltage because of the increase in the number of charge carriers moving closer to the surface from the source to the drain region, making the channel more conducting.
FIGURE 4
Figure 5 indicates the exponential decrease in mobility of graphene-based MOS-HEMT with a significant increase in temperature. This occurs because of the presence of more charge carriers. These charge carriers have more energy at higher temperatures, which increases the number of collisions between charge carriers, and hence mobility decreases. However, this decreased value of mobility in graphene-based MOS-HEMT is also higher than that of GaN-based MOS-HEMT mobility.
FIGURE 5
A comparative evaluation was carried out to determine the relevance of the proposed work by benchmarking FETs. The detailed comparison of device parameters and key performance indicators is provided in Table 1 [–]. The results reveal that the proposed graphene-based MOS-HEMT delivers strong DC performance, with a peak drain current reaching 1.28 mA/μm. In addition, the device maintains 4,732 cm2/V·s mobility, which is beneficial for minimizing conduction losses and improving device efficiency. These observations suggest that graphene-based MOS-HEMT may open new opportunities for high-frequency electronic systems and MEMS-based applications.
TABLE 1
| Parameter | Drain current (mA/μm) | Transconductance (mS/μm) | Mobility (cm2/V ·s) | Threshold voltage (mV) |
|---|---|---|---|---|
| InGaA MOSFETs [] | 1 | 2.5 | 8,800 | - |
| Self-aligned HEMT [] | 0.58 | 1.32 | - | 52 mV |
| MIS-HEMT [] | 1. 1 | 115 | 1,400 | −8 V |
| This work | 1.28 | 340 | 4,732 | 1 V |
Comparison between the proposed graphene-based MOS-HEMT and conventional field effect transistors (FETs).
4 Conclusion
This article analyzes graphene-based MOS-HEMT, in which semiconducting graphene is used as the channel layer. At VT = 1 V, the device has a higher drain current of 1,280 mA, which is approximately double that of GaN-based MOS-HEMT. It has a high on-off current ratio of 256,000, higher electron mobility, and more temperature stability than existing GaN MOS-HEMT. Thus, the remarkable characteristics and properties of graphene-based MOS-HEMTs prove it to be a promising prospect for future power electronics appliances.
Statements
Data availability statement
The raw data supporting the conclusions of this article will be made available by the authors, without undue reservation.
Author contributions
N: Conceptualization, Methodology, Software, Validation, Formal Analysis, Investigation, Data curation, Writing – original draft, Visualization. KM: Writing – review and editing, Supervision.
Funding
The author(s) declared that financial support was not received for this work and/or its publication.
Conflict of interest
The author(s) declared that this work was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.
Generative AI statement
The author(s) declared that generative AI was not used in the creation of this manuscript.
Any alternative text (alt text) provided alongside figures in this article has been generated by Frontiers with the support of artificial intelligence and reasonable efforts have been made to ensure accuracy, including review by the authors wherever possible. If you identify any issues, please contact us.
Publisher’s note
All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article, or claim that may be made by its manufacturer, is not guaranteed or endorsed by the publisher.
References
1.
EstradaCJMaZChanM. Complementary two-dimensional (2-D) FET technology with MoS2/hBN/Graphene stack. IEEE Electron Device Lett (2021) 42(12):1890–3. 10.1109/led.2021.3124823
2.
LiXTaoLChenZFangHLiXWangXet alGraphene and related two-dimensional materials: structure-Property relationships for electronics and optoelectronics. Appl Phys Rev (2017) 4(1-9):021306. 10.1063/1.4983646
3.
AhnJKimDParkK-HYooGHeoJ. Pt-Decorated graphene gate AlGaN/GaN MIS-HEMT for ultrahigh sensitive hydrogen gas detection. IEEE Trans Electron Devices (2021) 68(3), 1255–61. 10.1109/ted.2021.3053515
4.
DingHLiSWuSYangTLinGLiC. Schottky Barrier Height Modification of Graphene/Ge by Al2O3 Interfacial Layer and Au Nanoparticles for High-Gain Short-Wavelength Infrared Photodetectors. IEEE Trans Electron Devices (2024) 71(3):2159–64. 10.1109/ted.2024.3350568
5.
Al SoudAJaberAMDAHolcmanVSedlakPSobolaD. Simulation of the electrical properties of a graphene monolayer field effect transistor. In: Proc. 37th Int. Vacuum Nanoelectronics Conf. (IVNC). IEEE (2024). p. 1–2. 10.1109/IVNC63480.2024.10652423
6.
MendirattaNTripathiSL. A review on performance comparison of advanced MOSFET structures below 45 nm technology node. J Semiconductors (2020) 41(6):061401. 10.1088/1674-4926/41/6/061401
7.
DasCMazumdarK. Impact of cap layer engineering on the DC and RF performance of N-polar AlGaN/GaN HEMTs. In: Proc. 2025 Devices for Integrated Circuit (Devic) (2025). p. 439–42. 10.1109/DevIC63749.2025.11012396
8.
RomanczykBZhengXGuidryMLiHHatuiNWurmCet alW-band power performance of SiN-passivated GaN deep recess HEMTs. IEEE Electron Device Lett (2020) 41(3):349–52. 10.1109/LED.2020.2967034
9.
DiezSMohantySKurdakCAhmadiE. Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy. Appl Phys Lett (2020) 117(4):042102. 10.1063/5.0014460
10.
WangQJiangYLiLWangDOhnoYAoJP. Characterization of GaN MOSFETs on AlGaN/GaN heterostructure with variation in channel dimensions. IEEE Trans Electron Devices (2014) 61(2):498–504. 10.1109/ted.2013.2296094
11.
MohantySKhanKAhmadiE. N-polar GaN: epitaxy, properties, and device applications. Prog Quan Electron. (2023) 87:100450. 10.1016/j.pquantelec.2022.100450
12.
DasCMazumdarK. Investigation of the impact of the GaN cap layer on DC and RF performance in N-polar AlGaN/GaN HEMTs. Front Phys (2025) 13:1561573. 10.3389/fphy.2025.1561573
13.
ZhengJMaXHLuYZhaoBCZhangHSZhangMet alA scalable active compensatory sub-circuit for accurate GaN HEMT large signal models. IEEE Microwave Wireless Components Lett (2016) 26(6):431–3. 10.1109/lmwc.2016.2555940
14.
XuZJinyan WangJingqian LiuChunyan JinYong CaiZhenchuan Yanget alDemonstration of normally off recess-gated AlGaN/GaN MOSFET using GaN cap layer as recess mask. IEEE Electron Device Lett (2014) 35(12):1197–9. 10.1109/led.2014.2359986
15.
SaitoWTakadaYKuraguchiMTsudaKOmuraI. Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications. IEEE Trans On Electron Devices (2006) 53(2):356–62. 10.1109/ted.2005.862708
16.
OkaTNozawaT. AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications. IEEE Electron Device Lett (2008) 29(7):668–70. 10.1109/led.2008.2000607
17.
IshidaMUedaTTanakaTUedaD. GaN on Si Technologies for Power Switching Devices. IEEE Trans Electron Devices (2013) 60(10), 3053–9. 10.1109/ted.2013.2268577
18.
SelvarajS. L.NagaiK.EgawaT.MOCVD grown normally-OFF type AlGaN/GaN HEMTs on 4 inch Si using p-InGaN cap layer with high breakdown. 68th Device Research Conference (2010) 135–6. 10.1109/DRC.2010.5551874
19.
CaiYZhouY.ChenJ. K.LauK. M.High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride- based plasma treatment. IEEE Electron Device Lett (2005) 26(7):435–7. 10.1109/LED.2005.851122
20.
YangTYKuoMYWuJSLiangYKRaiRRathaurSKet alImprovement of the enhancement-mode GaN MIS-HEMTs by fluorine doping in the dielectric gate stack. IEEE Trans Nanotechnology (2024) 24:42–7. 10.1109/tnano.2024.3522371
21.
LinJAntoniadisDAdel AlamoJA. Impact of intrinsic channel scaling on InGaAs quantum-well MOSFETs. IEEE Trans Electron Devices (2015) 62(11):3470–6. 10.1109/ted.2015.2444835
22.
WaldronNKimD-HDel AlamoJA. A self-aligned InGaAs HEMT architecture for logic applications. IEEE Trans Electron Devices (2009) 57(1):297–304. 10.1109/ted.2009.2035031
23.
DasguptaSKellerSSpeckJSMishraUK. N-Polar GaN/AlN MIS-HEMT with fMAX of 204 GHz for Ka-Band applications. IEEE Electron Device Lett (2011) 32(12):1683–5. 10.1109/LED.2011.2168558
Summary
Keywords
gallium nitride, gm (transconductance), , graphene, metal-oxide semiconductor, high-electron mobility transistor
Citation
Neelu and Mazumdar K (2026) Design and characterization of high-efficiency 2D-material-based MOS-HEMTs for next-generation sustainable electronics. Front. Phys. 14:1817906. doi: 10.3389/fphy.2026.1817906
Received
26 February 2026
Revised
01 June 2026
Accepted
22 June 2026
Published
11 August 2026
Volume
14 - 2026
Edited by
Thuat Nguyen-Tran, VNU Semiconductor and Advanced Materials Institute, Vietnam
Reviewed by
Shahid Sattar, Linnaeus University, Sweden
Ammar Alsoud, Brno University of Technology, Czechia
Updates
Copyright
© 2026 and Mazumdar.
This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
*Correspondence: Neelu, neelukri1119@gmail.com
Disclaimer
All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article or claim that may be made by its manufacturer is not guaranteed or endorsed by the publisher.