About this Research Topic
Nowadays, the advanced synthesis of low dimensional luminescent materials is boosting the rapid development of cutting-edge industrial technologies for sustainable living. Unique photophysical properties of direct band gap nanowires, having two dimensions smaller than the Bohr radius of an electrically neutral electron-hole pair (exciton), stem from quantum confinement phenomenon. When wire-like crystals become large enough to support optical resonances they are considered as resonant cavities. The electromagnetic field in such cavities is distributed in the form of Fabry-Pérot modes and can mediate laser action if both gain and refractive index of the medium are high. Optically active nanowires are supposed to be electrically-driven or photoexcited emitters in efficient LEDs as well as elementary units in photonic integrated circuits in the nearest future. Therefore finding superior approaches and strategies for their synthesis is vital.
The main drawback to luminescent nanowires comes from crystal lattice defect states resulting in undesirable non-radiative relaxation of generated excitons or free charge carriers. The nature and concentration of the defects inevitably depend on the approaches and strategies chosen for the fabrication of nanowires. This article collection gathers outstanding synthetic protocols yielding monocrystalline nanoobjects with a low concentration of volume defects, and discussions on mechanisms of growth of various semiconducting nanowires, surface defect states passivation, structural and photophysical properties, exploitation of nanowires for photonics applications.
The authors are encouraged to submit Original Research, Perspective, Review, or Mini Review articles, covering the following themes related to the synthesis of luminescent nanowires:
• Solution-phase synthesis
• Chemical vapor deposition (CVD)
• Molecular-beam epitaxy (MBE)
Keywords: nanowires, luminescence, nanolasers, semiconducting materials, synthesis
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