About this Research Topic
In the past few years, there has been increasing interest in developing semiconductor nanostructures for advanced device technologies. These low-dimensional nanomaterials allow one to tailor the density of states, exploit the quantum confinement as well as coulomb interaction. Semiconductor lasers and amplifiers using self-assembled quantum dots (QDs) as the gain medium have exhibited unique and improved characteristics over their quantum-well and bulk counterparts, including large tolerance to material defects, reduced reflection sensitivity, nearly zero linewidth enhancement factor, low transparency current density, stable high-temperature operation, and ultrafast gain dynamics. In this session, we would like to provide a snapshot of state-of-the-art development in the area of QD optoelectronic devices, including a comprehensive overview of present and future applications.
Self-organized QDs have attracted a great deal of attention for a range of technological applications, including lasers, infrared detectors, optical amplifiers, and charge storage and quantum processing devices. This session will provide a comprehensive overview of the explosive growth of QD devices for present-day and future applications in optoelectronics. Significant emphasis will be placed on the unique device functions and enhanced performance that can be derived from QD active regions. There are several issues that need to be resolved. First, the variation in the size of QDs can lead to inhomogeneous broadening of the gain spectrum. Also, the areal fill factor of QDs is less than that of a quantum well, thus leading to a significant reduction in the achievable gain volume. Second, dynamic characteristics of these devices are inherently impaired by the QDs’ modulation properties: QD lasers typically suffer from limited modal gain, a high gain saturation factor inducing strong damping to small-signal response, and longer time constants due to cascaded carrier transport. Third, while most of these developments have taken place with GaAs and InP-based QDs, rapid progress is also being made with nitride- and silicon-based QDs. The state-of-the-art research and efforts to tackle the abovementioned problems are the subject of the session.
Contributed papers are solicited concerning growth, characterization, and device application of quantum dots in the following areas:
• Quantum dot, quantum dash and quantum materials
• QD based application to existing and novel optoelectronic devices, including lasers, infrared detectors, optical amplifiers, charge storage devices, and quantum information processing devices
• Nanoparticles and colloidal quantum dots
• Epitaxial growth and characterization of quantum dot materials and devices
• Nanofabrication, nanolithography and nanopatterning
• Modeling for extracting opto-/electronic properties based on material parameters
• Single-photon emitters and detectors based on QDs
• Hybrid 2D/QD integration
Keywords: quantum dot, quantum dash, optoelectronics, nanoparticles
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