Research Topic

Intrinsic Magnetic Topological Insulators – Growth, Characterization and Theoretical Investigations

About this Research Topic

When the Quantum Anomalous Hall Effect (QAHE) is realized, one can observe a plateau of Hall conductance of e2/h and a vanishing longitudinal conductance even at zero magnetic field. Then, the realization of the QAHE may lead to development of low-power-consumption electronics. Until now, the QAHE state has only been realized in magnetically doped Cr-and/or V-doped (Bi,Sb)2Te3 topological insulator film systems, below ∼ 1K. However, such a low critical temperature severely constrains the exploration of fundamental principles and technological applications based on this exotic phenomenon.

Seeking new materials to realize QAHE at higher temperature has become a major research direction in the field of topological quantum materials. One of the proposed approaches has been to realize high-temperature QAHE insulator in thin films of intrinsic ferromagnetic (FM) or antiferromagnetic (AFM)TI materials. Nevertheless, despite much theoretical and experimental efforts devoted, there is little progress until the recent discovery of an intrinsic AFM TI materials MB2T4-family (MB2T4: M =transition-metal or rare-earth element, B = Bi or Sb, T = Te, Se, or S). Among them, only MnBi2Te4 has been grown successfully and tested, but the other materials of this family with dynamically stable structure have not been realized completely until now, especially, MBi2Te4 (M=Ti, V, Ni, Eu). The other families of intrinsic magnetic topological insulators are need to be predicted and synthesized too.

This Research Topic aims to become the reference point for the search of novel materials to realize QAHE at higher temperature, and collect the latest advances in the field of topological quantum materials in one place. The main aim of this Research Topic is to search new ideas, innovations and understand basic science for synthesizing intrinsic magnetic topological materials from experiment and theory. We welcome submissions of Original Research, Review, Perspective and mini-reviews. Potential topics of primary interest include, but are not limited to:

• Development of advanced conventional and non-conventional synthetic methodology and techniques on the intrinsic magnetic topological insulators
• Understanding of the growth mechanisms of the intrinsic magnetic topological insulators with narrow growth window
• Characterization of the transport and magnetic properties of intrinsic magnetic topological insulators
• Theoretical work on novel crystal structures and growth dynamics of potential intrinsic magnetic topological insulators


Keywords: topological insulator, antiferromagnetic topological insulator, intrinsic magnetic topological insulator, quantum anomalous Hall effect, crystal growth


Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.

When the Quantum Anomalous Hall Effect (QAHE) is realized, one can observe a plateau of Hall conductance of e2/h and a vanishing longitudinal conductance even at zero magnetic field. Then, the realization of the QAHE may lead to development of low-power-consumption electronics. Until now, the QAHE state has only been realized in magnetically doped Cr-and/or V-doped (Bi,Sb)2Te3 topological insulator film systems, below ∼ 1K. However, such a low critical temperature severely constrains the exploration of fundamental principles and technological applications based on this exotic phenomenon.

Seeking new materials to realize QAHE at higher temperature has become a major research direction in the field of topological quantum materials. One of the proposed approaches has been to realize high-temperature QAHE insulator in thin films of intrinsic ferromagnetic (FM) or antiferromagnetic (AFM)TI materials. Nevertheless, despite much theoretical and experimental efforts devoted, there is little progress until the recent discovery of an intrinsic AFM TI materials MB2T4-family (MB2T4: M =transition-metal or rare-earth element, B = Bi or Sb, T = Te, Se, or S). Among them, only MnBi2Te4 has been grown successfully and tested, but the other materials of this family with dynamically stable structure have not been realized completely until now, especially, MBi2Te4 (M=Ti, V, Ni, Eu). The other families of intrinsic magnetic topological insulators are need to be predicted and synthesized too.

This Research Topic aims to become the reference point for the search of novel materials to realize QAHE at higher temperature, and collect the latest advances in the field of topological quantum materials in one place. The main aim of this Research Topic is to search new ideas, innovations and understand basic science for synthesizing intrinsic magnetic topological materials from experiment and theory. We welcome submissions of Original Research, Review, Perspective and mini-reviews. Potential topics of primary interest include, but are not limited to:

• Development of advanced conventional and non-conventional synthetic methodology and techniques on the intrinsic magnetic topological insulators
• Understanding of the growth mechanisms of the intrinsic magnetic topological insulators with narrow growth window
• Characterization of the transport and magnetic properties of intrinsic magnetic topological insulators
• Theoretical work on novel crystal structures and growth dynamics of potential intrinsic magnetic topological insulators


Keywords: topological insulator, antiferromagnetic topological insulator, intrinsic magnetic topological insulator, quantum anomalous Hall effect, crystal growth


Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.

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Submission Deadlines

26 February 2021 Abstract
28 May 2021 Manuscript

Participating Journals

Manuscripts can be submitted to this Research Topic via the following journals:

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Topic Editors

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Submission Deadlines

26 February 2021 Abstract
28 May 2021 Manuscript

Participating Journals

Manuscripts can be submitted to this Research Topic via the following journals:

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