Research Topic

Emerging Materials for Future Memory Technologies

About this Research Topic

The advancement of electronic devices over the past decades and the emergent technologies, such as big data, IoT, cloud computing, etc., have significantly raised the requirements for high-density and high-performance memory cells. The conventional memory technologies which are essentially based on charge storage mechanism face challenges in scaling down to the 10nm node and beyond due to easy loss of the stored charges at nanoscale which results in the degradation of performance, reliability, and noise margin. Coupled with the requirement of performance enhancement, the increase of static power consumption in the memory devices with dimension scaling has called for innovation of newer memory technologies. Emerging memory technologies which have become attractive for future memory hierarchies include ferroelectric random-access memory (FeRAM), magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), phase-change memory (PCM), and resistive random-access memory (RRAM) which combine the speed of conventional static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory. Additionally, diverse classes of novel emerging memory technologies such as transparent and plastic, three-dimensional (3D), and quantum dot memory technologies have also gained tremendous popularity in recent years.

Evidently for all types of future memory technologies, materials innovation is at the heart of their prospective developments and integration. The aim of this Research Topic is to address the recent state-of-the-art research progress in the field of materials innovation, as well as opportunities and challenges for their applications in the emerging memory devices. This Research Topic shall address advancements and challenges in materials processing and integration, improving their physical properties, and understanding the underlying mechanisms of their operation for their applications in charge-based as well as non-charge-based emergent memory devices. The materials classes considered shall include oxides, chalcogenides, carbon-based materials, polymer-based materials, organic small molecules, organic-inorganic hybrid materials, and novel two-dimensional (2D) materials.

This Research Topic aims at summarizing recent developments in the field of emerging materials for memory applications. We welcome papers that highlight recent development in material synthesis, characterization, device applications, theoretical and experimental methods.

Articles will be accepted in the form of Original Research and Brief Research Reports. We particularly encourage submissions in the form of Reviews, Mini Reviews and Perspectives. The topics shall be inclusive of but not limited to:
• Recent progress in ferroelectric and multiferroic materials for memory applications
• Resistive switching materials
• Topological phase-change memory
• Spin-based magnetic memory
• Interfacial phase change memory
• Low power memory materials
• Materials for high reliability and high yield memory devices
• Graphene, amorphous thin films, 2D materials and optoelectronic memory materials


Keywords: ferroelectrics and multiferroics, resistive switching materials, magnetic and spintronic materials, phase change materials, nano-clusters, organic memory materials, 2D materials and devices, graphene


Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.

The advancement of electronic devices over the past decades and the emergent technologies, such as big data, IoT, cloud computing, etc., have significantly raised the requirements for high-density and high-performance memory cells. The conventional memory technologies which are essentially based on charge storage mechanism face challenges in scaling down to the 10nm node and beyond due to easy loss of the stored charges at nanoscale which results in the degradation of performance, reliability, and noise margin. Coupled with the requirement of performance enhancement, the increase of static power consumption in the memory devices with dimension scaling has called for innovation of newer memory technologies. Emerging memory technologies which have become attractive for future memory hierarchies include ferroelectric random-access memory (FeRAM), magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), phase-change memory (PCM), and resistive random-access memory (RRAM) which combine the speed of conventional static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory. Additionally, diverse classes of novel emerging memory technologies such as transparent and plastic, three-dimensional (3D), and quantum dot memory technologies have also gained tremendous popularity in recent years.

Evidently for all types of future memory technologies, materials innovation is at the heart of their prospective developments and integration. The aim of this Research Topic is to address the recent state-of-the-art research progress in the field of materials innovation, as well as opportunities and challenges for their applications in the emerging memory devices. This Research Topic shall address advancements and challenges in materials processing and integration, improving their physical properties, and understanding the underlying mechanisms of their operation for their applications in charge-based as well as non-charge-based emergent memory devices. The materials classes considered shall include oxides, chalcogenides, carbon-based materials, polymer-based materials, organic small molecules, organic-inorganic hybrid materials, and novel two-dimensional (2D) materials.

This Research Topic aims at summarizing recent developments in the field of emerging materials for memory applications. We welcome papers that highlight recent development in material synthesis, characterization, device applications, theoretical and experimental methods.

Articles will be accepted in the form of Original Research and Brief Research Reports. We particularly encourage submissions in the form of Reviews, Mini Reviews and Perspectives. The topics shall be inclusive of but not limited to:
• Recent progress in ferroelectric and multiferroic materials for memory applications
• Resistive switching materials
• Topological phase-change memory
• Spin-based magnetic memory
• Interfacial phase change memory
• Low power memory materials
• Materials for high reliability and high yield memory devices
• Graphene, amorphous thin films, 2D materials and optoelectronic memory materials


Keywords: ferroelectrics and multiferroics, resistive switching materials, magnetic and spintronic materials, phase change materials, nano-clusters, organic memory materials, 2D materials and devices, graphene


Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.

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Submission Deadlines

07 September 2021 Manuscript

Participating Journals

Manuscripts can be submitted to this Research Topic via the following journals:

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Topic Editors

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Submission Deadlines

07 September 2021 Manuscript

Participating Journals

Manuscripts can be submitted to this Research Topic via the following journals:

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