Research Topic

Gallium oxide (Ga2O3) and other emerging ultrawide bandgap semiconductors

About this Research Topic

Gallium oxide (Ga2O3) and other emerging ultrawide bandgap semiconductors such as Germanium oxide (GeO2) are receiving great attention recently due to their wide bandgap and transparent semiconductor properties. The energy bandgap gap values of Ga2O3 and GeO2 are larger than 4.6 eV, which enables great potential for power electronics beyond conventional SiC and GaN based semiconductors. In addition to the power electronic applications, these ultra-wide bandgap semiconductors are a promising candidate in the field of photodetectors and photocatalysts due to their almost direct bandgap properties.

Despite the recent progress achieved in the field of ultrawide bandgap semiconductors, more issues need to be identified and addressed in terms of material preparation and device fabrication as well as fundamental theory. In addition, hybrid semiconductor materials and their devices made in combination with other semiconductors, dielectrics, and metals need to be explored to overcome the limit of intrinsic properties of Ga2O3 and GeO2 semiconductors. This Research Topic aims to provide readers the latest advancements on Ga2O3 semiconductors as well as on other emerging ultrawide bandgap semiconducting oxides.

Topics of interest include, but are not limited to:
• Epitaxial growth of Ga2O3 and GeO2 semiconductors
• Thin films of Ga2O3 and GeO2 semiconductors
• Nanowires, nanotubes, and nanorods of Ga2O3 and GeO2 semiconductors
• Various dopants and doping method for Ga2O3 and GeO2 semiconductors
• Ga2O3 or GeO2 based electronic devices
• Ga2O3 or GeO2 based photonic devices
• Ga2O3 or GeO2 based photocatalysts
• Ga2O3 or GeO2 based hybrid semiconductor and device with other semiconductor, dielectric, and metal
• Fabrication and processing development with Ga2O3 and GeO2 semiconductors
• Computation modelling and simulation on Ga2O3 and GeO2 semiconductors


Keywords: Ga2O3, Gallium oxide, wide bandgap semiconductor, epitaxial growth, schottky barrier diode (SBD), power device, photocatalyst, ultraviolet sensor, chemical sensor


Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.

Gallium oxide (Ga2O3) and other emerging ultrawide bandgap semiconductors such as Germanium oxide (GeO2) are receiving great attention recently due to their wide bandgap and transparent semiconductor properties. The energy bandgap gap values of Ga2O3 and GeO2 are larger than 4.6 eV, which enables great potential for power electronics beyond conventional SiC and GaN based semiconductors. In addition to the power electronic applications, these ultra-wide bandgap semiconductors are a promising candidate in the field of photodetectors and photocatalysts due to their almost direct bandgap properties.

Despite the recent progress achieved in the field of ultrawide bandgap semiconductors, more issues need to be identified and addressed in terms of material preparation and device fabrication as well as fundamental theory. In addition, hybrid semiconductor materials and their devices made in combination with other semiconductors, dielectrics, and metals need to be explored to overcome the limit of intrinsic properties of Ga2O3 and GeO2 semiconductors. This Research Topic aims to provide readers the latest advancements on Ga2O3 semiconductors as well as on other emerging ultrawide bandgap semiconducting oxides.

Topics of interest include, but are not limited to:
• Epitaxial growth of Ga2O3 and GeO2 semiconductors
• Thin films of Ga2O3 and GeO2 semiconductors
• Nanowires, nanotubes, and nanorods of Ga2O3 and GeO2 semiconductors
• Various dopants and doping method for Ga2O3 and GeO2 semiconductors
• Ga2O3 or GeO2 based electronic devices
• Ga2O3 or GeO2 based photonic devices
• Ga2O3 or GeO2 based photocatalysts
• Ga2O3 or GeO2 based hybrid semiconductor and device with other semiconductor, dielectric, and metal
• Fabrication and processing development with Ga2O3 and GeO2 semiconductors
• Computation modelling and simulation on Ga2O3 and GeO2 semiconductors


Keywords: Ga2O3, Gallium oxide, wide bandgap semiconductor, epitaxial growth, schottky barrier diode (SBD), power device, photocatalyst, ultraviolet sensor, chemical sensor


Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.

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Submission Deadlines

05 June 2021 Abstract
03 October 2021 Manuscript

Participating Journals

Manuscripts can be submitted to this Research Topic via the following journals:

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Topic Editors

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Submission Deadlines

05 June 2021 Abstract
03 October 2021 Manuscript

Participating Journals

Manuscripts can be submitted to this Research Topic via the following journals:

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