Research Topic

Oxide-semiconductor Thin Film Transistors for 3D Monolithic Integration

About this Research Topic

The data intensive and data centric computing calls for a paradigm shift of computing hardware platform to address the important challenges facing future integrated chips that cannot be merely answered by the continuous down-scaling and performance improvement in Si-based transistors. One promising way is 3D monolithic integration that is able to integrate different function components in a vertically stacked manner which promises to deliver higher device density, larger bandwidth, smaller latency, and lower power consumption as compared with the current technology.



Many oxide semiconductors-based materials enjoy the advantages of large-scale deposition, decent mobilities, and back-end-of-line compatible processes. They could be key enablers for future 3D monolithic integrated chips. The aim of the current Research Topic is to cover promising, recent, and novel research trends in oxide semiconductor technology. Areas to be covered in this Research Topic may include, but are not limited to:



• Fundamental understanding of various oxide semiconductor materials

• Process module development, i.e. gate stack formation and contact engineering

• Oxide semiconductor-based thin film transistors

• Thermal stability and reliability

• Novel device concepts enabled by oxide semiconductors

• Circuits and systems employing oxide semiconductor materials and devices


Keywords: oxide semiconductor, thin film transistor, 3D monolithic integration, back-end-of-line compatible, integrated circuits


Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.

The data intensive and data centric computing calls for a paradigm shift of computing hardware platform to address the important challenges facing future integrated chips that cannot be merely answered by the continuous down-scaling and performance improvement in Si-based transistors. One promising way is 3D monolithic integration that is able to integrate different function components in a vertically stacked manner which promises to deliver higher device density, larger bandwidth, smaller latency, and lower power consumption as compared with the current technology.



Many oxide semiconductors-based materials enjoy the advantages of large-scale deposition, decent mobilities, and back-end-of-line compatible processes. They could be key enablers for future 3D monolithic integrated chips. The aim of the current Research Topic is to cover promising, recent, and novel research trends in oxide semiconductor technology. Areas to be covered in this Research Topic may include, but are not limited to:



• Fundamental understanding of various oxide semiconductor materials

• Process module development, i.e. gate stack formation and contact engineering

• Oxide semiconductor-based thin film transistors

• Thermal stability and reliability

• Novel device concepts enabled by oxide semiconductors

• Circuits and systems employing oxide semiconductor materials and devices


Keywords: oxide semiconductor, thin film transistor, 3D monolithic integration, back-end-of-line compatible, integrated circuits


Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.

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Submission Deadlines

10 September 2021 Abstract
08 January 2022 Manuscript

Participating Journals

Manuscripts can be submitted to this Research Topic via the following journals:

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Topic Editors

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Submission Deadlines

10 September 2021 Abstract
08 January 2022 Manuscript

Participating Journals

Manuscripts can be submitted to this Research Topic via the following journals:

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