Research Topic

Recent Advances in 2D Layered Materials for Transistors

About this Research Topic

Graphene and following 2D materials have been demonstrated to exhibit great potentials for electronic applications due to their outstanding properties. Despite a very short history of research, many novel devices based on 2D materials have made great progress, ranging from theoretical design, materials preparation and technical integration to device configurations. Transistor as one of basic building blocks is the core of modern electronics. 2D layered materials as the channel in the transistors are demonstrated successfully and provide great potentials for nanoelectronics in the future due to their intrinsic atomic thickness and weak van der Waals interlayer interactions, followed by the development of materials optimization and device configurations. Therefore, advancing 2D material-based transistors are important for science and society.



This proposed topical issue of Frontiers in Materials tackles the problem and challenge of 2D materials-based transistors. Developing high-performance 2D materials transistors relies on high material quality, clean interface, ideal contact, high scalability, and productivity. Thus, the development trend and directions in the future as follow:



• Exploration of new 2D materials and device configurations in the transistors

• Design of new novel van der Waals heterostructures based on 2D materials for the transistors

• Improvement in the manufacturing process for the transistors

• Optimization of the contacts and dielectrics in the transistors



This research topic covers recent progress in 2D materials-based transistors including advanced material/device preparation techniques, van der Waals heterostructures, materials doping, surface modification, contact and dielectrics engineering. Especially, the transistors of novel 2D materials and devices configuration are attractive. The subject of interests are the following, but not limited to:



• 2D materials-based transistors

• Van der Waals heterostructure for the transistors

• Novel mechanisms and configurations for the transistors

• Device optimization of transistors: channel, contact, dielectrics


Keywords: 2D materials, transistor, Van der Waals heterostructure, contact, dielectrics


Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.

Graphene and following 2D materials have been demonstrated to exhibit great potentials for electronic applications due to their outstanding properties. Despite a very short history of research, many novel devices based on 2D materials have made great progress, ranging from theoretical design, materials preparation and technical integration to device configurations. Transistor as one of basic building blocks is the core of modern electronics. 2D layered materials as the channel in the transistors are demonstrated successfully and provide great potentials for nanoelectronics in the future due to their intrinsic atomic thickness and weak van der Waals interlayer interactions, followed by the development of materials optimization and device configurations. Therefore, advancing 2D material-based transistors are important for science and society.



This proposed topical issue of Frontiers in Materials tackles the problem and challenge of 2D materials-based transistors. Developing high-performance 2D materials transistors relies on high material quality, clean interface, ideal contact, high scalability, and productivity. Thus, the development trend and directions in the future as follow:



• Exploration of new 2D materials and device configurations in the transistors

• Design of new novel van der Waals heterostructures based on 2D materials for the transistors

• Improvement in the manufacturing process for the transistors

• Optimization of the contacts and dielectrics in the transistors



This research topic covers recent progress in 2D materials-based transistors including advanced material/device preparation techniques, van der Waals heterostructures, materials doping, surface modification, contact and dielectrics engineering. Especially, the transistors of novel 2D materials and devices configuration are attractive. The subject of interests are the following, but not limited to:



• 2D materials-based transistors

• Van der Waals heterostructure for the transistors

• Novel mechanisms and configurations for the transistors

• Device optimization of transistors: channel, contact, dielectrics


Keywords: 2D materials, transistor, Van der Waals heterostructure, contact, dielectrics


Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.

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Submission Deadlines

11 September 2021 Abstract
09 January 2022 Manuscript

Participating Journals

Manuscripts can be submitted to this Research Topic via the following journals:

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Topic Editors

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Submission Deadlines

11 September 2021 Abstract
09 January 2022 Manuscript

Participating Journals

Manuscripts can be submitted to this Research Topic via the following journals:

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