About this Research Topic
Pseudomorphic and metamorphic epitaxial semiconductor materials are a class of semiconductors grown on lattice-mismatched substrates with strained and relaxed lattice, respectively. These materials offer flexible and unique opportunities for the engineering of electronic, optical and transport properties for tailored device applications and heterogeneous integration. Emerging applications include lasers, detectors, solar cells, HEMTs, HBTs and silicon-based optoelectronic integration etc.
This Research Topic covers a wide range of multidisciplinary areas. For material design, the key task is to find optimal material structure by tailoring the band gap and controlling the lattice strain relaxation. The material epitaxy is to optimize growth parameters and understand behaviors of defects and dislocations for the improvement of crystallization. The anti-phase boundaries annihilation is a key task for heterogeneous epitaxy of materials with polarity mismatch such as silicon-based group III-V materials. The semiconductor device processing and device characterizations need to be carefully investigated to find the effects of the pseudomorphic and metamorphic epitaxial structures on device performances.
This Research Topic aims to collect recent advances in the area and promote communication between scientists and engineers in the community. We welcome authors to submit Original Research papers, Perspectives, Reviews, and Mini-Reviews. Potential topics include, but are not limited to, the following:
• Theory of pseudomorphic and metamorphic epitaxy
• Epitaxy of pseudomorphic and metamorphic semiconductor materials
• Characterization and modeling of the material properties
• Understanding of the material behavior using novel methods
• Design of innovative devices using pseudomorphic and metamorphic materials
• Semiconductor heterogeneous epitaxy and integration
• Device performances based on pseudomorphic and metamorphic materials
• On-chip heterogeneous integration devices and solutions
• Proposals and analysis of the new applications
This Research Topic covers a wide range of multidisciplinary areas. For material design, the key task is to find optimal material structure by tailoring the band gap and controlling the lattice strain relaxation. The material epitaxy is to optimize growth parameters and understand behaviors of defects and dislocations for the improvement of crystallization. The anti-phase boundaries annihilation is a key task for heterogeneous epitaxy of materials with polarity mismatch such as silicon-based group III-V materials. The semiconductor device processing and device characterizations need to be carefully investigated to find the effects of the pseudomorphic and metamorphic epitaxial structures on device performances.
This Research Topic aims to collect recent advances in the area and promote communication between scientists and engineers in the community. We welcome authors to submit Original Research papers, Perspectives, Reviews, and Mini-Reviews. Potential topics include, but are not limited to, the following:
• Theory of pseudomorphic and metamorphic epitaxy
• Epitaxy of pseudomorphic and metamorphic semiconductor materials
• Characterization and modeling of the material properties
• Understanding of the material behavior using novel methods
• Design of innovative devices using pseudomorphic and metamorphic materials
• Semiconductor heterogeneous epitaxy and integration
• Device performances based on pseudomorphic and metamorphic materials
• On-chip heterogeneous integration devices and solutions
• Proposals and analysis of the new applications
Keywords: pseudomorphic, metamorphic, heterostructure, semiconductors, lattice mismatch, optoelectronics, microelectronics
Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.
