About this Research Topic
In the middle of the 1940s, CMOS sensors were first developed to enhance the properties of MOS technology. Even though nanotechnology was well-developed and provided excellent image quality for the time, their weight, size, and latency made them unsuitable for many applications. Miniaturization efforts facilitated the development of MOS sensors. MOS sensors, as they were then called, were used in a few consumer and scientific applications, but they had a lot of issues, such as significant fixed-pattern and temporal noise.
For many years, MOS sensors were relegated to specialized applications due to the development of MOS devices and their superiority in all applications. However, MOS technology continued
to advance, eventually giving rise to the CMOS sensors that are utilized today. Quality of life quickly increased in the 2000s.
This research topic intends to present new perspectives, recent achievements, technological advances, and emerging trends in the field of CMOS devices. The effects of various kinds of nanoscale transistor types will be a particular focus.
The scope of this Research Topic includes designing logic gate circuits, effective, and highly responsive instruments with distinctive electrical and optical features as well as their applications. The creation of contemporary all-optical and optoelectronic devices will also consider novel perspectives and cutting-edge technologies, including memory devices, Biosensors devices, photodetection tools, and numerous other optical tools.
This research confirms the following topics:
• Semiconductor materials and device physics
• Investigated and developed using Analog Behavioural Model (ABM).
• Multiple quantum well channel spatial wavefunction switched FETs (SWS-FETs)
• Novel electronic materials and their applications
• Nanoscale transistors and short channel effects
• Nanostructured devices and quantum confinement effects
• Non-volatile memory (QDNVM) and quantum devices
• Energy bands and electrical conduction
• Semiconductor surface physics
• DRAM (Dynamic Random Access Memory) cells and logic gates.
For many years, MOS sensors were relegated to specialized applications due to the development of MOS devices and their superiority in all applications. However, MOS technology continued
to advance, eventually giving rise to the CMOS sensors that are utilized today. Quality of life quickly increased in the 2000s.
This research topic intends to present new perspectives, recent achievements, technological advances, and emerging trends in the field of CMOS devices. The effects of various kinds of nanoscale transistor types will be a particular focus.
The scope of this Research Topic includes designing logic gate circuits, effective, and highly responsive instruments with distinctive electrical and optical features as well as their applications. The creation of contemporary all-optical and optoelectronic devices will also consider novel perspectives and cutting-edge technologies, including memory devices, Biosensors devices, photodetection tools, and numerous other optical tools.
This research confirms the following topics:
• Semiconductor materials and device physics
• Investigated and developed using Analog Behavioural Model (ABM).
• Multiple quantum well channel spatial wavefunction switched FETs (SWS-FETs)
• Novel electronic materials and their applications
• Nanoscale transistors and short channel effects
• Nanostructured devices and quantum confinement effects
• Non-volatile memory (QDNVM) and quantum devices
• Energy bands and electrical conduction
• Semiconductor surface physics
• DRAM (Dynamic Random Access Memory) cells and logic gates.
Keywords: nanoscale, materials, nano, nanomaterials, Semiconductors, MOS devices, DRAM Memory, nanobiotechnology.
Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.
