Potential technological applications of graphene include the use of carbon-based technology as possible valid alternative to the silicon based one, especially for satisfying the request of extreme miniaturization and high frequency operations. These applications require large-area mono-layer sheets, and they cannot use the micrometer-sized flakes obtained by graphite exfoliation.

Chemical vapor deposition (CVD) is a commonly used method for the production of large-area graphene, but also epitaxial growth from SiC, laser annealing/irradiation of polymers. These methods produce a graphene that often results​ to be a polycrystalline material with monocrystalline grains connected by grain boundaries, which influence graphene electrical and mechanical properties and degrade overall performance.

The application of graphene in the next generation of electronic devices as transistor and memory devices, is opposed by its zero band gap. To modify the graphene band structure, several methods were proposed but for nano-device fabrication it is also necessary to pattern graphene at a resolution as low as possible. To this respect, several methods were proposed in literature.​

We welcome contributions that address the fabrication/synthesis of monolayer graphene and its characterization from a structural and electrical point of view. Additionally, authors are welcome to submit manuscripts on physical and chemical methods to pattern graphene, as well as the realization of a device with patterned graphene.

Keywords: Graphene, patterning, carbon-based device, CVD, epitaxial growth

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