Advances in III-Nitride Materials, Devices, and Applications

III-nitride semiconductors have become key to advances in solid-state lighting, power electronics, and RF devices, thanks to their high radiative efficiency, tunable direct bandgap, and excellent material properties. Despite the maturity of InGaN blue LEDs, GaN-based red and UV LEDs still suffer from low external quantum efficiency, limiting their potential in new applications like micro-LED displays and sterilization. While GaN-based HEMTs have achieved impressive breakdown voltages in the lab, most devices in the field operate below 650 V. Additionally, realizing high-performance p-channel GaN FETs remains a challenge because of complex materials issues, and the development of N-polar GaN is hindered by defects. Growth on various substrates is actively explored, but further progress is needed.

This Research Topic aims to showcase recent progress and identify challenges in III-nitride materials and device research. We seek contributions on fundamental material growth, device fabrication, and application-driven development. Ultimately, we hope to highlight strategies to overcome current performance bottlenecks and accelerate the adoption of advanced III-nitride technologies.

The focus is on innovations in III-nitride materials, new device architectures, and their application in lighting and electronics. We welcome articles on, but not limited to, the following themes:

• Growth techniques for III-nitrides

• Mechanisms affecting growth and device performance

• Novel III-nitride device structures

• Material, optical, and electronic characterization

• InGaN long-wavelength LEDs

• GaN-based UV LEDs

• Micro-LED display technologies

• GaN-based lasers

• GaN HEMTs for power and RF applications