Silicon-based optoelectronics has the advantages of low cost, high integration density and high reliability. It is compatible with CMOS process and can achieve large-scale mass production by using mature microelectronic processing platform. The monolithic integration of silicon-based optoelectronic and microelectronic devices can be achieved by CMOS technology, which has the advantage of optoelectronics in the field of high-speed information transmission and microelectronics in the field of high-efficiency information processing. The optoelectronic integrated circuits (OEIC) utilize electronic and photonic devices together in a synergistic way to achieve better performance than those based on pure electronic devices or optoelectronic devices.
In this Research Topic, Topic Editors aim to collect the latest progress in the preparation of Silicon-based optoelectronics and microelectronics integration technology in the experimental field, as well as possible new methods. In addition, the performance of OEICs from the aspect of improving material crystal quality and device performances will be welcomed. The latest progress and challenges in integrating new materials with silicon CMOS circuits are also welcome. Topic Editors hope this Research Topic can provide readers with a deep understanding of Silicon-based optoelectronics and microelectronics integration technology, and serve as a knowledge base for future work in this field.
The scope of this Research Topic will be specific to OEICs. High-quality Original Research, Review and Perspective articles on new material growth, characterization, design, preparation and OEICs characterization are welcome. The research contents of interest include but are not limited to:
1. Integration of New materials on silicon CMOS circuits surface
2. Monolithic integrated image sensor
3. Optoelectronic integrated circuits
4. Silicon-based photoelectronic devices
5. Application-specific integrated circuits
Silicon-based optoelectronics has the advantages of low cost, high integration density and high reliability. It is compatible with CMOS process and can achieve large-scale mass production by using mature microelectronic processing platform. The monolithic integration of silicon-based optoelectronic and microelectronic devices can be achieved by CMOS technology, which has the advantage of optoelectronics in the field of high-speed information transmission and microelectronics in the field of high-efficiency information processing. The optoelectronic integrated circuits (OEIC) utilize electronic and photonic devices together in a synergistic way to achieve better performance than those based on pure electronic devices or optoelectronic devices.
In this Research Topic, Topic Editors aim to collect the latest progress in the preparation of Silicon-based optoelectronics and microelectronics integration technology in the experimental field, as well as possible new methods. In addition, the performance of OEICs from the aspect of improving material crystal quality and device performances will be welcomed. The latest progress and challenges in integrating new materials with silicon CMOS circuits are also welcome. Topic Editors hope this Research Topic can provide readers with a deep understanding of Silicon-based optoelectronics and microelectronics integration technology, and serve as a knowledge base for future work in this field.
The scope of this Research Topic will be specific to OEICs. High-quality Original Research, Review and Perspective articles on new material growth, characterization, design, preparation and OEICs characterization are welcome. The research contents of interest include but are not limited to:
1. Integration of New materials on silicon CMOS circuits surface
2. Monolithic integrated image sensor
3. Optoelectronic integrated circuits
4. Silicon-based photoelectronic devices
5. Application-specific integrated circuits
