Optoelectronics, ultrafast optics, and terahertz radiations are pivotal areas of research that hold the potential to revolutionize next-generation photonic devices. The current problem in this field revolves around the need for efficient and ultrafast switching applications, which are essential for advanced device applications. Recent studies have shown that doping semiconductor and organic materials with specific impurities can significantly enhance luminescence quantum yield. However, the nonlinear optical properties of these materials remain underexplored, particularly in the context of switching, optical limiting, and detector applications. While some progress has been made in enhancing the nonlinear optical response of materials and investigating femtosecond and attosecond optical switching schemes, there is still a significant gap in understanding how to fabricate devices that operate at petahertz speeds. Additionally, the generation and detection of terahertz radiation, especially using photonic approaches, have garnered considerable attention. Despite advancements, the output power of terahertz radiation sources in the 3-5 THz range remains a challenge due to transit time and resistance-capacitance effects. Addressing these issues requires innovative strategies and a deeper investigation into efficient terahertz radiation sources with tunable broadband emission frequencies.

This Research Topic aims to provide solutions to the unsolved problem of extending optical limiting applications to switching applications by developing design strategies to manipulate optoelectronic materials. The primary objectives include investigating the potential challenges and future prospects of utilizing optoelectronic materials for switching applications. The research will focus on generalizing strategies for manipulating optoelectronic materials to minimize linear and nonlinear losses while enhancing the nonlinear refractive index coefficient. This will increase the figure-of-merit for switching applications, making it feasible to achieve higher transmission signals and a phase change of π in all-optical switching devices. Additionally, the research will address the challenges in maintaining optical output power at terahertz frequencies due to transit-time and resistance-capacitance effects in solid-state electronic devices.

To gather further insights into the boundaries of optoelectronics, ultrafast optics, and terahertz radiations, we welcome articles addressing, but not limited to, the following themes:

• Advances in spatial and temporal profile measurement of ultrafast pulsed lasers.
• Advanced nonlinear optical techniques.
• Optical nonlinearities in semiconductors and organic molecules.
• Switching in high figure-of-merit materials.
• Recent advances in terahertz radiation sources and applications.
• Optical imaging and super-resolution imaging techniques.
• Optoelectronic materials and device applications.

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Optoelectronics, Ultrafast Optics, and Terahertz Radiations for Advanced Device Applications