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Advances in Porous Semiconductor Research

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About this Research Topic

Since the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties for many ...

Since the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties for many applications in optics, microelectronics, energy, biology and medicine.

This Research Topic highlights significant advances related to the manufacturing, characterization, properties and applications of porous semiconductors (Si, Ge, III-V compounds, TiO2 nanotubes)

Topical areas include but are not limited to the electrochemical and metal-assisted chemical etching, surface chemistry and functionalization, pore filling and nanoparticle decoration, novel nanostructures and microfabrication techniques, micro photonics and luminescence, micro systems and electronics, medical applications, imaging and therapy, energy harvesting, storage and conversion, sensors and biosensors, as well as emerging applications.


Keywords: Porous materials, semiconductors, microfabrication, Electrochemistry, Nanotechnologies


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