About this Research Topic
The field of nitride semiconductors has witnessed remarkable advancements, particularly in transition metal nitrides and their alloys with wide band-gap group 13 nitrides. These materials showcase unique properties such as ferroelectricity, ferromagnetism, high piezoelectric coupling, superconductivity, and optical non-linearity. The integration of such nitrides with traditional nitrides has the potential to revolutionize various technological domains. Applications encompass high-frequency and high-power transistors, RF-filters, MEMS, optical filters, spintronics, and more, indicating their significant impact on a more efficient and sustainable society.
This Research Topic aims to address the pressing scientific challenges and explore the vast potential of new emerging transition metal nitride semiconductors and their alloys with classic nitrides. Despite the promising prospects, several obstacles hinder their seamless integration into practical applications. These challenges include the limitations posed by the affinity of specific elements towards oxidation in materials like AlScN and AlYN, which can impede device quality and reliability. Additionally, the structural integration of transition metal nitrides with group 13 nitrides presents difficulties due to the need for compatible crystal structures, while stability concerns arise with polymorphic nitrides like NbNx.
To advance the field, we seek contributions that delve into recent advances and explore innovative solutions to address these challenges. We encourage research on novel growth techniques, epitaxial methods, and crystal structure control to achieve stable, high-performance nitride semiconductors. Moreover, investigations into materials with high Curie temperatures for spintronics and the integration of nitrides in quantum computing applications are also essential areas of interest.
Through comprehensive research and interdisciplinary collaboration, this special issue aims to drive significant progress in understanding, optimizing, and leveraging new emerging transition metal nitride semiconductors, leading to their transformative impact on various technological domains.
Contributors are invited to address the following themes within the Research Topic:
• Novel growth techniques and epitaxial methods for transition metal nitrides and their alloys with standard nitrides.
• Characterization of structural, optical, electronic, and magnetic properties of new emerging inorganic ternary metal nitrides. Applications of nitride materials in high electron mobility transistors, RF-filters, MEMS, and optical filters, focusing on enhancing device performance.
• Strategies to improve stability and crystal structure control in polymorphic nitrides for superconducting and Josephson junction applications.
• Theoretical investigations and modeling of transition metal nitrides' properties and behavior in electronic and optoelectronic devices.
• Polarization switching behaviour in ferroelectric transitional metal nitrides.
• Advancements in spintronic materials using nitrides with high Curie temperatures, including potential spin-based transistor applications.
• Innovations in quantum computing materials achieved through the integration of nitrides in pseudomorphic structures (e.g., Ta2N or NbN).
Types of manuscripts of interest include original research articles, reviews, mini-reviews, and perspective articles that contribute to a comprehensive understanding of the challenges, recent advances, and applications of new emerging transition metal nitride semiconductors in various technological domains.
This Research Topic aims to address the pressing scientific challenges and explore the vast potential of new emerging transition metal nitride semiconductors and their alloys with classic nitrides. Despite the promising prospects, several obstacles hinder their seamless integration into practical applications. These challenges include the limitations posed by the affinity of specific elements towards oxidation in materials like AlScN and AlYN, which can impede device quality and reliability. Additionally, the structural integration of transition metal nitrides with group 13 nitrides presents difficulties due to the need for compatible crystal structures, while stability concerns arise with polymorphic nitrides like NbNx.
To advance the field, we seek contributions that delve into recent advances and explore innovative solutions to address these challenges. We encourage research on novel growth techniques, epitaxial methods, and crystal structure control to achieve stable, high-performance nitride semiconductors. Moreover, investigations into materials with high Curie temperatures for spintronics and the integration of nitrides in quantum computing applications are also essential areas of interest.
Through comprehensive research and interdisciplinary collaboration, this special issue aims to drive significant progress in understanding, optimizing, and leveraging new emerging transition metal nitride semiconductors, leading to their transformative impact on various technological domains.
Contributors are invited to address the following themes within the Research Topic:
• Novel growth techniques and epitaxial methods for transition metal nitrides and their alloys with standard nitrides.
• Characterization of structural, optical, electronic, and magnetic properties of new emerging inorganic ternary metal nitrides. Applications of nitride materials in high electron mobility transistors, RF-filters, MEMS, and optical filters, focusing on enhancing device performance.
• Strategies to improve stability and crystal structure control in polymorphic nitrides for superconducting and Josephson junction applications.
• Theoretical investigations and modeling of transition metal nitrides' properties and behavior in electronic and optoelectronic devices.
• Polarization switching behaviour in ferroelectric transitional metal nitrides.
• Advancements in spintronic materials using nitrides with high Curie temperatures, including potential spin-based transistor applications.
• Innovations in quantum computing materials achieved through the integration of nitrides in pseudomorphic structures (e.g., Ta2N or NbN).
Types of manuscripts of interest include original research articles, reviews, mini-reviews, and perspective articles that contribute to a comprehensive understanding of the challenges, recent advances, and applications of new emerging transition metal nitride semiconductors in various technological domains.
Keywords: Transition Metal Nitrides, Computational Modeling, Semiconductor Materials, Electronic Devices, Nanomaterials
Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.
