About this Research Topic
Oxide semiconductor materials have risen to prominence in the realm of advanced electronics, offering a wealth of possibilities for a diverse array of applications. Notable materials such as In2O3, IGZO, IWO, and ZnO have established themselves as primary semiconducting channels in thin-film transistors (TFTs) due to their exceptional characteristics, including high mobility, large area uniformity, low-temperature processability, and optical transparency. These qualities make them particularly well-suited for flat-panel display technology.
Moreover, oxide semiconductor transistors have generated substantial interest for their potential role in CMOS back-end-of-line (BEOL) logic and memory components. These components are pivotal for enabling monolithic three-dimensional (3D) integration, facilitating innovative computing architectures with heightened functionality and computational power.
Despite the remarkable strides made in oxide semiconductor research, several formidable challenges lie ahead. First and foremost, the pressing demand for innovative computing architectures with enhanced functionality and computational power calls for the timely development of novel n-/p-type oxide semiconductor thin-film transistors with both superior
performance and scalability, specifically tailored for achieving very large-scale integration in M3D integrated circuits within the CMOS backend of line.
The well-known trade-off between mobility and stability adds to the complexity of this task. Despite its widespread recognition, a comprehensive understanding of the relationship between mobility and stability remains elusive. This knowledge gap and the lack of effective solutions hinder the full potential of these devices to replace current polycrystalline silicon technologies effectively.
Furthermore, the surging demand for advanced displays, particularly in the domains of Augmented Reality (AR) and Virtual Reality (VR), necessitates the development of high-resolution, high mobility backplanes. These backplanes are essential for transparent displays requiring fastswitching transistors, high current capabilities, and robust stability to support active-matrix organic LED (AMOLED) technology. However, the pursuit of a low-cost, high-mobility, and uniformly scalable technology for high-current driving backplanes in advanced displays is still in its developmental stages.
Prospective authors are cordially invited to submit original research papers and reviews that align with but are not restricted to the following topics:
• Advancements in Oxide Semiconductor Materials: Exploring novel materials and their unique properties, while emphasizing techniques for growing and characterizing oxide
semiconductors, with a specific focus on structural, electrical, and optical characteristics.
• Revolutionizing Fabrication Techniques and Device Architectures for Oxide Semiconductor-Based Devices: Pioneering innovations in fabrication processes, techniques, and device structures designed to harness the potential of oxide semiconductors.
• Unveiling the Oxide Semiconductor Devices Physics: In-depth investigations into the underlying physics governing oxide semiconductor devices, covering electronic transport,
charge carrier dynamics, and reliability analysis.
• Harnessing Oxide Semiconductors for Cutting-Edge Applications in Circuits and beyond: Exploring the multifaceted use of oxide semiconductors in circuit applications, including
advanced back-end-of-line (BEOL) logic and memory, state-of-the-art AR/VR display technologies, and innovative computing solutions.
Declaration: Topic editor, Dongqi Zheng, is employed by Apple, Inc..
Moreover, oxide semiconductor transistors have generated substantial interest for their potential role in CMOS back-end-of-line (BEOL) logic and memory components. These components are pivotal for enabling monolithic three-dimensional (3D) integration, facilitating innovative computing architectures with heightened functionality and computational power.
Despite the remarkable strides made in oxide semiconductor research, several formidable challenges lie ahead. First and foremost, the pressing demand for innovative computing architectures with enhanced functionality and computational power calls for the timely development of novel n-/p-type oxide semiconductor thin-film transistors with both superior
performance and scalability, specifically tailored for achieving very large-scale integration in M3D integrated circuits within the CMOS backend of line.
The well-known trade-off between mobility and stability adds to the complexity of this task. Despite its widespread recognition, a comprehensive understanding of the relationship between mobility and stability remains elusive. This knowledge gap and the lack of effective solutions hinder the full potential of these devices to replace current polycrystalline silicon technologies effectively.
Furthermore, the surging demand for advanced displays, particularly in the domains of Augmented Reality (AR) and Virtual Reality (VR), necessitates the development of high-resolution, high mobility backplanes. These backplanes are essential for transparent displays requiring fastswitching transistors, high current capabilities, and robust stability to support active-matrix organic LED (AMOLED) technology. However, the pursuit of a low-cost, high-mobility, and uniformly scalable technology for high-current driving backplanes in advanced displays is still in its developmental stages.
Prospective authors are cordially invited to submit original research papers and reviews that align with but are not restricted to the following topics:
• Advancements in Oxide Semiconductor Materials: Exploring novel materials and their unique properties, while emphasizing techniques for growing and characterizing oxide
semiconductors, with a specific focus on structural, electrical, and optical characteristics.
• Revolutionizing Fabrication Techniques and Device Architectures for Oxide Semiconductor-Based Devices: Pioneering innovations in fabrication processes, techniques, and device structures designed to harness the potential of oxide semiconductors.
• Unveiling the Oxide Semiconductor Devices Physics: In-depth investigations into the underlying physics governing oxide semiconductor devices, covering electronic transport,
charge carrier dynamics, and reliability analysis.
• Harnessing Oxide Semiconductors for Cutting-Edge Applications in Circuits and beyond: Exploring the multifaceted use of oxide semiconductors in circuit applications, including
advanced back-end-of-line (BEOL) logic and memory, state-of-the-art AR/VR display technologies, and innovative computing solutions.
Declaration: Topic editor, Dongqi Zheng, is employed by Apple, Inc..
Keywords: Oxide semiconductors; Thin-film transistors; Back-end-of-line/BEOL compatible; Logic for memory; Display technology
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