Two-dimensional (2D) layered materials have been considered as strong candidates for next-generation electronic and optoelectronic device applications in the post-Moore era, owing to their intriguing properties such as the all-interface nature, tunable band structures, large electrostatic gate coupling, strong interaction with light and high integration capability. On the other hand, since 2D materials are atomically thin, the performances of the 2D material-based devices are highly sensitive to the interface quality and environment. For instance, the interfacial scattering effect in 2D material devices largely affects the transistor performance because the carriers are highly confined near the substrate and/or dielectric interfaces. The contact interface quality generates impacts on the contact resistance and hence the carrier transport. In devices based on 2D material heterostructures, the interfaces between each 2D materials play important roles on the band alignment and bending, and trap state distribution, thus modulate the device performance.
High interface quality is essential to achieve high-performance electronic and optoelectronic devices based on 2D materials. The interface engineering in 2D material devices provides new ideas for device tuning and optimizing, thus attracts considerable attention in recent years. Intense efforts have been made to develop various approaches of interface engineering in 2D material devices, including passivation of interface vacancy/trap states, interface doping, contact engineering, tunning the dielectric interface, and placing tunneling or charge transfer layers in 2D heterostructures. This Research Topic aims to introduce the recent advances in interface engineering in 2D material devices, thus promoting the development of novel functional semiconductor devices.
We encourage the researchers to contribute their latest and high-quality Original Research or Reviews on the rapidly developing area of interface engineering in 2D material devices. Potential topics include but are not limited to:
• Interface engineering for material growth and epitaxy
• Material surface passivation/encapsulation
• Engineering of device contact interfaces
• Interface doping and phase transitions
• Substrate and dielectric engineering
• Interface engineering in 2D material heterostructures
Two-dimensional (2D) layered materials have been considered as strong candidates for next-generation electronic and optoelectronic device applications in the post-Moore era, owing to their intriguing properties such as the all-interface nature, tunable band structures, large electrostatic gate coupling, strong interaction with light and high integration capability. On the other hand, since 2D materials are atomically thin, the performances of the 2D material-based devices are highly sensitive to the interface quality and environment. For instance, the interfacial scattering effect in 2D material devices largely affects the transistor performance because the carriers are highly confined near the substrate and/or dielectric interfaces. The contact interface quality generates impacts on the contact resistance and hence the carrier transport. In devices based on 2D material heterostructures, the interfaces between each 2D materials play important roles on the band alignment and bending, and trap state distribution, thus modulate the device performance.
High interface quality is essential to achieve high-performance electronic and optoelectronic devices based on 2D materials. The interface engineering in 2D material devices provides new ideas for device tuning and optimizing, thus attracts considerable attention in recent years. Intense efforts have been made to develop various approaches of interface engineering in 2D material devices, including passivation of interface vacancy/trap states, interface doping, contact engineering, tunning the dielectric interface, and placing tunneling or charge transfer layers in 2D heterostructures. This Research Topic aims to introduce the recent advances in interface engineering in 2D material devices, thus promoting the development of novel functional semiconductor devices.
We encourage the researchers to contribute their latest and high-quality Original Research or Reviews on the rapidly developing area of interface engineering in 2D material devices. Potential topics include but are not limited to:
• Interface engineering for material growth and epitaxy
• Material surface passivation/encapsulation
• Engineering of device contact interfaces
• Interface doping and phase transitions
• Substrate and dielectric engineering
• Interface engineering in 2D material heterostructures
