Original Research
Published on 28 Feb 2022
Design and Performance of Ultraviolet 368-nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2022.836714
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