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Articles

Original Research

Published on 06 Mar 2020

Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

in Optics and Photonics

Haiou Li
Kangchun Qu
Xi Gao
Yue Li
Yonghe Chen
Zhiping Zhou
Lei Ma
Fabi Zhang
Xiaowen Zhang
Tao Fu

Frontiers in Physics

doi 10.3389/fphy.2020.00051

2,977 views
2 citations