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REVIEW article

Front. Detect. Sci. Technol.

Sec. Materials for Detectors

Volume 3 - 2025 | doi: 10.3389/fdest.2025.1630014

This article is part of the Research TopicAdvances in High-Z and Wide-Bandgap Compound Semiconductor Radiation DetectorsView all articles

Advances in High-Z Semiconductor Radiation Detectors at BNL

Provisionally accepted
Giovanni  PinaroliGiovanni Pinaroli1*Aleksey  BolotnikovAleksey Bolotnikov1Mohamed  BOUKHICHAMohamed BOUKHICHA1Francesca  CapocasaFrancesca Capocasa1Luca  CultreraLuca Cultrera1Abdul  K RumaizAbdul K Rumaiz2Emi  TamuraEmi Tamura1Gabriella  CariniGabriella Carini1
  • 1Brookhaven National Laboratory (DOE), Upton, United States
  • 2NSLS-II, BNL, Upton, United States

The final, formatted version of the article will be published soon.

Semiconductor radiation detectors play a crucial role in scientific research and technological applications, with materials typically categorized as low-or high-Z depending on their atomic numbers and densities. This distinction is not strictly defined because the selection of materials depends on the specific application and the energy range. Low-Z semiconductors such as diamond, silicon (Si), selenium (Se), and silicon carbide (SiC) are widely used in X-ray and charged particle detection due to their excellent charge transport properties and radiation hardness. High-Z semiconductors, including germanium (Ge) and compound materials such as cadmium telluride (CdTe), cadmium zinc telluride (CdZnTe or CZT), and emerging lead halide perovskites (most promising is CsPbBr3), offer absorption efficiency in the hard X-ray and gamma-ray regions comparable to CZT. These materials enable advancements in diverse fields, including biology, astrophysics, medical imaging, and industrial inspection. At Brookhaven National Laboratory (BNL), the Instrumentation Department is at the forefront of developing cutting-edge semiconductor detector technologies to address the evolving needs of fundamental and applied research. The projects cover the entire development cycle, from the investigation of new materials and optimization of detector architectures to the design of low-noise readout electronics and signal processing techniques. The ongoing research projects focus on nextgeneration detection systems that improve sensitivity, energy resolution, and robustness for a wide range of applications. The continuous demand for versatile and high-performance detector systems drives research in multiple directions with emphasis on advancing detector integration within complex experimental requirements, ensuring seamless compatibility with large-scale scientific facilities, and developing scalable and cost-effective fabrication techniques.The combination of novel materials, innovative detector designs, and state-of-the-art readout electronics paves the way for next-generation semiconductor detectors with unprecedented performance. In this work, we present an overview of our recent advances in semiconductor detectors and their applications.

Keywords: X-and gamma-ray detectors, Radiation detectors, CdZnTe, TlBr, CsPbBr3, High-purity germanium detectors, A-Se

Received: 16 May 2025; Accepted: 18 Aug 2025.

Copyright: © 2025 Pinaroli, Bolotnikov, BOUKHICHA, Capocasa, Cultrera, Rumaiz, Tamura and Carini. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

* Correspondence: Giovanni Pinaroli, Brookhaven National Laboratory (DOE), Upton, United States

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