The field of two-dimensional (2D) materials is rapidly developing, driven by ongoing demands in the semiconductor industry to produce efficient, scalable, and high-performance memory devices. Modern electronic systems require memory architectures that can effectively support neuromorphic computing, artificial synapses, analog signal processing, and non-volatile storage. Conventional memory materials, although extensively investigated, often exhibit performance limitations in terms of scalability, operational stability, manufacturing yield, and variability. Recently, 2D materials such as boron nitride (BN), graphene oxide, molybdenum disulfide (MoS₂), tungsten diselenide (WSe₂), tin sulfide (SnS), and graphdiyne oxide (GDYO) have shown promising capabilities to overcome these challenges, offering unique electrical, mechanical, and chemical properties beneficial to next-generation memory applications. Despite these promising developments, significant efforts in experimental characterization, underlying mechanism understanding, device engineering, and theoretical modeling remain necessary to establish reliable technologies suitable for real-world applications.
This Research Topic aims to advance our understanding and development of 2D material-based memory devices, specifically targeting neuromorphic and next-generation computing technologies. We seek to elucidate the physical principles governing switching and charging mechanisms, model the device behaviors mathematically, optimize fabrication methods, and explore their implementation in neuromorphic systems. The objective is to bring comprehensive insight into how these novel material systems can facilitate future electronic and memory solutions, ultimately contributing to improved device performance, reliability, and scalability.
To gather further insights within the scope of 2D material-based memory devices for advanced and neuromorphic computing, this Research Topic welcomes original studies and theoretical contributions addressing, but not limited to, the following themes:
• Development of innovative fabrication methods for high-performance 2D material-based memory devices; • Discovery and characterization of emerging 2D material candidates for neuromorphic and non-volatile memory applications; • Exploration and detailed investigation of physical switching/charging mechanisms in 2D-based memory; • Mathematical modeling and computational approaches to understand and optimize memory behavior in 2D devices; • Application-driven assessment and integration strategies for 2D material-based memories into neuromorphic systems.
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