CORRECTION article
Front. Nanotechnol.
Sec. Nanodevices
Volume 7 - 2025 | doi: 10.3389/fnano.2025.1650174
"Correction: Performance and variability analysis of ALD-grown wafer scale HfO2/Ta2O5-based memristive devices for neuromorphic computing".
Provisionally accepted
- 1University of Edinburgh, Edinburgh, United Kingdom
- 2Indian Institute of Technology (Indian School of Mines) Dhanbad Central Library, Dhanbad, India
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Here, we report a large-scale wafer microfabrication process and in-depth Q6electrical analysis of atomic layer deposition (ALD) grown bilayer (i.e., HfO2/Ta2O5) memristive devices. The fabricated bilayer devices initially require anelectroforming event and show stable bipolar resistive switching responseswith some variations in the device switching voltages. These variations arecovered in the 15.7%–22.7% range corresponding to the maximum switchingvoltage of the tested devices. Moreover, time series analysis (TSA) is employed byconsidering the device switching voltages (VSET and VRESET) to predict the deviceperformance, and the obtained outcomes are well matched to the experimentaldata. Furthermore, the least values of coefficient of variability (CV) in the deviceswitching voltages are 6.09% (VSET) and 3.22% (VRESET) in the case of device-to-device(D2D) while 1.76% (VSET) and 2.14% (VRESET) in the case of cycle-to-cycle(C2C). Furthermore, the fabricated devices efficiently perform the synapticfunctionalities in terms of potentiation (P) and depression (D), paired-pulsefacilitation (PPF), and paired-pulse depression (PPD), with a least value ofnonlinearity (NL) factor of 0.43 in synaptic response, which is close to theideal value of NL in biological synapses. Therefore, the present work showsthat the single ALD system can be an efficient deposition method to deposit high-koxide materials for memristive arrays over large-scale wafers.
Keywords: Memristive Devices, Oxide materials, Performance matrix, Atomic layer deposition, Variability factor, device stability
Received: 19 Jun 2025; Accepted: 20 Jun 2025.
Copyright: © 2025 Kumar, Yadav, Stathopoulos and Prodromakis. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
* Correspondence:
Sanjay Kumar, University of Edinburgh, Edinburgh, United Kingdom
Themis Prodromakis, University of Edinburgh, Edinburgh, United Kingdom
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