REVIEW article
Front. Sens.
Sec. Sensor Devices
Volume 6 - 2025 | doi: 10.3389/fsens.2025.1603755
This article is part of the Research TopicParticle and radiation sensors developed at INFN-CSN5View all 4 articles
ARCADIA Fully-Depleted CMOS MAPS development with LFoundry 110nm CIS
Provisionally accepted
Manuel Da Rocha Rolo1*
Stefano Durando1Fabrizio Alfonsi2
A. Gabrielli2Gabriele Balbi2
Serena Mattiazzo3Devis Pantano3
Davide Chiappara3Attilio Andreazza4Matteo Pezzoli5Lodovico Ratti5Giovanni Ambrosi6
Tommaso Croci6
Coralie Neubüser7
Gian-Franco Dalla Betta7Thomas Corradino7Roberto Iuppa7
Ester Ricci7
Angelo Rivetti1Sara Garbolino1Andrea Paterno1
Marco Mandurrino1Davide Falchieri2Massimo Caccia4
Romualdo Santoro4Piero Giubilato3Jeffery Wyss3Gianluca Traversi5Pisana Placidi6Lucio Pancheri7- 1INFN, Torino, Italy
- 2INFN, Bologna, Italy
- 3INFN, Padova, Italy
- 4INFN, Milano, Italy
- 5INFN, Pavia, Italy
- 6INFN, Perugia, Italy
- 7INFN TIFPA, Trento, Italy
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Fully-depleted CMOS sensors represent a significant step forward in radiation detection, combining the advantages of monolithic active pixel sensors with the enhanced signal collection efficiency of depleted bulk materials. The ARCADIA Collaboration established a technology platform for the development and production of deep sub-micron fully-depleted CMOS monolithic sensors with excellent collection efficiency, advancing the semiconductor detector technology with IP cores, ASICs and back-end dedicated acquisition systems. The sensor technology was demonstrated on system-ready full chip monolithic active pixel sensors with high rate capability and very low power for the detection of charged particles and photons. Innovative CMOS monolithicLGADs featuring a shallow gain layer and implementing a low-gain avalanche diode were developed for time-of-flight detectors, while other prototype ASICs implement multi-threshold photon-counting architectures for X-ray imaging. The implementation of fully-depleted monolithic strip sensors with embedded electronics and low power density makes the proposed approach † Thomas Corradino is now with Fondazione Bruno Kessler (FBK),
Keywords: CMOS, fully-depleted monolithic sensor, ASIC, low-power architectures, Semiconductor sensors, integrated circuits, VLSI
Received: 31 Mar 2025; Accepted: 03 Jul 2025.
Copyright: © 2025 Da Rocha Rolo, Durando, Alfonsi, Gabrielli, Balbi, Mattiazzo, Pantano, Chiappara, Andreazza, Pezzoli, Ratti, Ambrosi, Croci, Neubüser, Dalla Betta, Corradino, Iuppa, Ricci, Rivetti, Garbolino, Paterno, Mandurrino, Falchieri, Caccia, Santoro, Giubilato, Wyss, Traversi, Placidi and Pancheri. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
* Correspondence: Manuel Da Rocha Rolo, INFN, Torino, Italy
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