Exploring beyond-CMOS Paradigms for Energy-Efficient Computing

The field of electronics is undergoing a transformative phase as CMOS technology approaches its intrinsic physical and performance limits. While technologies such as FinFETs and nanosheets have historically driven advancements in computing power, miniaturization, and cost efficiency, they now face challenges such as escalating power consumption, thermal bottlenecks, short-channel effects, and limited voltage scalability. These issues present significant barriers to further scaling and make it increasingly difficult for conventional CMOS to fulfill the demands of cutting-edge applications such as artificial intelligence (AI), high-performance computing, the Internet of Things (IoT), and energy-constrained edge devices.



To address these challenges, beyond-CMOS device concepts are gaining momentum, powered by innovative materials, novel switching mechanisms, and disruptive circuit paradigms. Potential candidates include negative capacitance FETs (NCFETs), Landau FETs, tunneling FETs (TFETs), ferroelectric FETs (FeFETs), spintronic and magneto-electric devices, and van der Waals heterostructures utilizing 1D/2D materials. Simultaneously, wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), alongside MEMS-based devices, offer new avenues for low-power logic, non-volatile memory, and high-performance power electronics. Collectively, these technologies are opening pathways for energy-efficient and scalable computing systems beyond the traditional CMOS paradigm.



This Research Topic aims to explore the spectrum from materials discovery to system-level demonstrations, with a focus on accelerating the transition of emerging devices into practical, energy-efficient computing solutions. To gather further insights into this promising frontier, we welcome articles addressing, but not limited to, the following themes:



Emerging devices like NCFETs, Landau FETs, TFETs, Spintronic devices

MEMS-based systems for multifunctional integration

Applications of wide-bandgap semiconductors (SiC, GaN)

1D/2D materials and van der Waals heterostructures

Organic and oxide ferroelectric devices

Advanced modeling, compact models, and simulation frameworks

Circuit- and system-level design, and experimental validations

We invite Original Research, Reviews, Mini-Reviews, and Perspectives from both academia and industry, aiming to bridge the gap from fundamental breakthroughs to practical implementations in energy-efficient, beyond-CMOS computing.