ORIGINAL RESEARCH article
Front. Energy Res.
Sec. Smart Grids
Volume 13 - 2025 | doi: 10.3389/fenrg.2025.1623462
This article is part of the Research TopicExploring Material, Device, and System Advancements for Energy Storage and High-Voltage Electrical EngineeringView all articles
Characteristics and Propagation of Switching-Induced Stress Waves in SiC MOSFET Power Modules
Provisionally accepted
- 1Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
- 2State Key Laboratory of High-Efficiency Special Cable Technology, Shanghai, China
- 3State Grid Shanghai Municipal Electrical Power Company, Shanghai, China
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Switching-induced stress waves (SSW) are recognized as a promising non-invasive technology for real-time monitoring of power module packaging failures, though limited by the lack of a comprehensive understanding of their characteristics and propagation mechanisms. In this study, a dedicated SSW detection platform was developed for SiC MOSFET power modules, where the mechanical wave nature was verified through time-delay analysis. Dominant frequency components at 150 kHz and 270 kHz were identified using both piezoelectric ceramic and PVDF sensors. Experimental investigations further demonstrated that the time-domain parameters of SSW were predominantly influenced by bus voltage (UDC), followed by load current (IR), whereas principal frequency components remained stable across operational conditions. Propagation effects through the module were systematically analyzed via finite element modeling, revealing a 5.82% increase in signal amplitude and 5.88% spectral bandwidth expansion after transmission. These results confirm that sensor-captured signals can be effectively equated to original chip vibrations in defect-free propagation paths.
Keywords: switching-induced stress waves, SiC MOSFET power module, Finite Element Modeling, packaging health detecting, Non-invasive detection
Received: 09 May 2025; Accepted: 02 Jun 2025.
Copyright: © 2025 Huang, Fan, Heng, Ni, Sun and Mao. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
* Correspondence: Siqi Huang, Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
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