Impact Factor 2.689 | CiteScore 2.27
More on impact ›

Original Research ARTICLE Provisionally accepted The full-text will be published soon. Notify me

Front. Mater. | doi: 10.3389/fmats.2019.00200

In-situ Interfacial Passivation for Stable Perovskite Solar Cells

 Qi Chen1*, Yang Bai1, Huanping Zhou2, Longfan Duan1, Liang li1, Yizhou Zhao1, Guangyue Cao1 and Xiuxiu Niu1
  • 1Beijing Institute of Technology, China
  • 2Peking University, China

Unreacted lead iodide is commonly believed playing an important role in the performance of perovskite solar cells. However, the excess lead iodide acts like a double-edged blade, which hampers the long-term stability of devices. Here, we used the ethanedithiol (EDT) as the solvent to process Spiro-OMeTAD (Spiro) layer. Due to the strong coordination between EDT and Pb (II), the unreacted PbI2 at the perovskite films surface was effectively passivated, which suppressed the degradation of the perovskite layer without sacrificing the efficiency. Moreover, the hydrophobic EDT also enhanced the moisture stability of devices, thus prolonged the device lifetime. With EDT-Spiro layer, a stabilized power conversion efficiencies from 17.11% up to 19.23% was achieved in the corresponding device. More importantly, a significant enhancement of the long-term stability of perovskite solar cells was observed under the N2 atmosphere without sealing for 30 days.

Keywords: dithiol, stability, interface, perovskite solar cells, Efficiency

Received: 03 Jun 2019; Accepted: 05 Aug 2019.

Copyright: © 2019 Chen, Bai, Zhou, Duan, li, Zhao, Cao and Niu. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

* Correspondence: Prof. Qi Chen, Beijing Institute of Technology, Beijing, China,