ORIGINAL RESEARCH
Published on 24 Jan 2023
Introducing an n-type electron deceleration layer to enhance the luminous efficiency of AlGaN-based DUV-LEDs
doi 10.3389/fphy.2023.1118946
- 1,763 views
- 4 citations
- Frontiers in Physics
- Interdisciplinary Physics
- Research Topics
- Preparation and Physics of Single-crystalline Ultra-wide Bandgap Semiconductors
Preparation and Physics of Single-crystalline Ultra-wide Bandgap Semiconductors
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ORIGINAL RESEARCH
Published on 23 Nov 2022
Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11–22) AlN film grown by HVPE
doi 10.3389/fphy.2022.1076895
- 1,816 views
- 3 citations
ORIGINAL RESEARCH
Published on 21 Nov 2022
Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure
doi 10.3389/fphy.2022.1084214
- 3,232 views
- 7 citations
ORIGINAL RESEARCH
Published on 26 Oct 2022
Study of dry etched N-polar (Al)GaN surfaces obtained by inductively coupled plasma etching
doi 10.3389/fphy.2022.1042998
- 2,444 views
- 2 citations
ORIGINAL RESEARCH
Published on 17 Oct 2022
Failure quantitative assessment approach to MOSFET power device by detecting parasitic parameters
doi 10.3389/fphy.2022.1050678
- 4,249 views
- 1 citation
