ORIGINAL RESEARCH article

Front. Phys., 23 July 2025

Sec. Interdisciplinary Physics

Volume 13 - 2025 | https://doi.org/10.3389/fphy.2025.1637651

Miniaturized dual-band bandpass filter with closely spaced passbands and wide stopband

    YL

    Yijun Li

    JN

    Jinxuan Ni

    SL

    Siyu Li

    QH

    Qian Han

    JT

    Jie Tian

    NL

    Na Li

    TM

    Tianye Ma *

  • School of Electrical and Automation Engineering, Nanjing Normal University and Jiangsu Key Laboratory of 3D Printing Equipment and Manufacturing, Nanjing, China

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Abstract

This work presents a new miniaturized dual-band bandpass filter (BPF) featuring closely spaced passbands and wide stopband performance. The filter is designed on a slots-loaded substrate integrated waveguide (SIW) cavity fed by microstrip line. By introducing a longitudinal rectangular slot at the cavity’s center symmetry line and two transverse rectangular slots at the upper and lower edges, two shorted patches are formed within the SIW. A second-order BPF is constructed through the gap coupling. Subsequently, two quarter-wavelength resonators are introduced into the upper and lower transverse slots, which are respectively coupled with two shorted patches. This configuration allows the second-order filtering passband, formed by shorted patches coupling, to be split into two second-order closed passbands with frequency ratio of 1:1.04. Due to the low harmonic characteristics of the shorted patches, the designed dual-band BPF achieves a −20 dB stopband range of up to 2.86f0. Finally, a prototype is designed, fabricated, and measured to validate the proposed design, demonstrating good consistency between the simulated and measured results.

1 Introduction

In the rapidly evolving landscape of wireless communication, the demand for efficient and versatile filtering solutions has become paramount. Dual-band bandpass filters (BPFs) serve as crucial components in various applications, enabling the simultaneous transmission of multiple frequency bands while effectively rejecting unwanted signals. These filters are essential for devices ranging from smartphones and tablets to satellite communication systems and Internet of Things (IoT) applications [13]. Dual-band BPFs exhibiting closely spaced passbands (i.e., low frequency ratio) are particularly valuable in communication systems where distinct signal channels are allocated within a relatively narrow spectral range, such as in aircraft communication and navigation systems, naval communication and radar systems, and multi-transceiver co-site operations [46]. In Hus et al. [4], a microstrip dual-band BPF with closely specified passbands is proposed using unequal-length shunted-line stepped impedance resonator (shunted-line SIR). In Zhang and Zhu [5], a compact split-type dual-band BPF is presented based on λ/4 resonator. In Chen et al. [6], a novel double-slot-loaded-resonator (DSLR) is proposed and adopted in the design of a dual-band BPF with closely spaced passbands.

On the other hand, substrate integrated waveguide (SIW) technology has emerged as a prominent method for designing high-performance dual-band BPFs [710]. In Azad and Mohan [7], a novel SIW dual-band BPF is developed utilizing TE101 and TE102 dual modes. Reference [8] proposes compact SIW diplexers and a dual-band filter featuring wide-stopband performance. In Azad and Mohan [9], both single- and dual-band filters are presented, utilizing a single perturbed SIW circular cavity. Work [10] introduces a straightforward method for miniaturizing dual-band filters through the use of E-shaped slot-lines. In addition, some dual-band SIW BPFs focus on achieving passbands with closed band spacing [1114]. In Zhou et al. [11], dual-band SIW filters with closely spaced passbands and flexibly allocated bandwidths are proposed based on TE102 and TE201 modes. In [1214], split-type topology is utilized in the design of multilayered and three-dimensional dual-band SIW BPFs with closed band spacing. However, achieving the coexistence of closely spaced passbands, miniaturized circuit size, and a wide stopband range in dual-band SIW filters is often challenging.

In this paper, we propose a new miniaturized dual-band BPF featuring closely spaced passbands and wide-stopband performance by using a single multiple-slots-loaded SIW cavity. A BPF prototype is designed, fabricated, and measured to validate the proposed method, demonstrating good consistency between the simulated and measured results. This design offers the following distinctive advantages: (1) Miniaturized size (0.23λg2), (2) Small passband frequency ratio (1:1.04), and (3) Wide stopband range (2.86f0).

2 Design and analysis

2.1 Configuration

Figure 1 illustrates the structural configuration of the designed dual-band BPF. The device is implemented on an F4B substrate with material parameters of εr = 2.2, tanδ = 0.001, and thickness h = 0.508 mm. The proposed design incorporates: (1) two transversely oriented slots positioned along the upper and lower boundaries of the SIW cavity, (2) a longitudinally aligned slot centered on the symmetry axis, and (3) two quarter-wavelength microstrip resonators integrated in the transverse slot structures. These slot arrangements form two gap-coupled shorted patch resonators operating at the same frequencies. A coplanar waveguide (CPW) transition is employed to realize 50 Ω impedance matching between the feeding ports and the SIW-based filter.

FIGURE 1

Diagram of an F4B substrate configuration with labeled dimensions: `dl`, `wp`, `wm`, `lp`, `g`, `lm`, `sw`, `cw`, `sl`, `cl`. It includes input and output ports, and indicates the x, y, and z axes. The substrate is displayed with surrounding measurements and ground connection.

Configuration of the proposed dual-band BPF.

2.2 Shorted patch resonator

The proposed dual-band filter achieves broad stopband characteristics primarily through the utilization of shorted patch resonators (the evolutionary process of shorted patches is visualized in Figure 2a). The resonant mode behavior can be analyzed via electric-field distribution along the central symmetry line. Traditional patch resonators exhibit two distinct mode categories: (1) modes with zero tangential electric-field at the centerline, and (2) modes with non-zero tangential electric-field at the centerline. The introduction of an electric wall boundary condition at the centerline exerts differential effects on mode propagation depending on whether the field distribution satisfies the new boundary constraint.

FIGURE 2

Diagram showing three panels. (a) Features three orange squares: a simple patch, a shorted patch with a dotted line, and a vias-loaded patch with a line of white dots. (b) Displays one orange square labeled with width \(W\) and length \(L\), with an x-y axis. (c) Shows a graph with a z-y axis, depicting three wave patterns, labeled \(TM_{1n}\), \(TM_{3n}\), \(TM_{5n}\), intersecting at \(x = L/2\).

(a) Evolution of shorted patch. (b) Traditional patch configuration. (c) Electric-field of the resonant modes with Ez(x = L/2) = 0.

When truncated to form a shorted resonator, modes with zero tangential electric-field (Et = 0) at the centerline are preserved because their field distributions inherently satisfy the electric wall condition [15]. These modes (e.g., TM10, TM12, TM30) retain their resonant frequencies with minimal perturbation. Conversely, modes featuring non-zero tangential electric-field at the centerline are suppressed due to boundary condition violation. The electric wall enforces Et = 0 at the centerline, which conflicts with the non-zero field requirement of these modes (e.g., TM01, TM20, TM02, TM21, TM22), rendering them non-existent in the shorted configuration.

The mode suppression mechanism can be mathematically validated using the modified Helmholtz equation under electric wall boundary conditions. For a rectangular patch resonator with dimensions L × W (Figure 2b), the TMmn mode resonant frequencies are governed by Equation 1:

In traditional patches, all integer values of m and n are permissible. However, the electric wall at x = L/2 imposes Ez (x = L/2) = 0, restricting valid modes to those with odd m indices. As demonstrated in Figure 2c, only odd m modes (TM1n, TM3n, TM5n…) satisfy the condition sin(mπx/L+90°) = 0 at x = 2/L. Even m modes, which violate this boundary condition, are suppressed. Eigenmode simulations of the shorted patch (Figure 3) confirm that odd-order modes persist in the shorted structure, while even-order modes are eliminated. This mode truncation significantly reduces high-order mode excitation, enabling enhanced stopband performance.

FIGURE 3

Four panels labeled (a) to (d) display color-coded contour maps with adjacent color bars indicating maximum and minimum values. Each panel features gradient variations of colors from red to blue alongside a series of white circles.

The first four modes in shorted patch resonator. (a) TM10 mode. (b) TM11 mode. (c) TM12 mode. (d) TM30 mode.

2.3 Single-band wide stopband filter

To start with, as depicted in

Figure 4

, a single-band BPF is designed by utilizing shorted patch resonators. In an SIW cavity, two gap-coupled shorted patch resonators are realized through the introduction of multiple slots. This single-band BPF is designed to meet the following specifications:

  • 1) Center Frequency (CF): 2.8 GHz;

  • 2) 0-dB Bandwidth (BW): 70 MHz;

  • 3) Return Loss (RL): > 15 dB.

FIGURE 4

Diagram of a rectangular structure with labeled dimensions. The central section includes a vertical partition between two ports: Port 1 (S) on the left and Port 2 (L) on the right. Labeled dimensions include "wp," "ws," "lm," "lp," "wm," and "g." The perimeter is marked with an array of circles.

Shorted patch-based single-band BPF.

Based on the generalized filter synthesis theory, the coupling matrix of the filter can be obtained as shown in (2):

The external quality factor Qe and inter-resonator coupling coefficient M12 can be extracted using Equations 3, 4Where τS11(fi) denotes the group delay of S11 at resonance fi, f1 and f2 represent coupled resonant frequencies, and f01, f02 are self-resonant frequencies. Figure 5 demonstrates the extracted Qe and M12. Additionally, Figure 6 illustrates the influence of varying some key parameters on the filter response. As shown in Figure 6a, as the value of g increases, the bandwidth of the filter decreases gradually. As shown in Figure 6b, as wp increases, the center frequency of the filter shifts gradually towards lower frequencies.

FIGURE 5

Graph (a) shows the external quality factor \(Q_e\) decreasing from 50 to 30 as \(lm\) increases from 5.5 to 9.5 millimeters. Graph (b) shows the coupling coefficient \(M\) decreasing from 0.04 to 0.015 as \(g\) increases from 0.3 to 0.5 millimeters. Both graphs use red line plots with triangular markers.

Extracted (a) external quality factor Qe and (b) coupling coefficient M.

FIGURE 6

Two graphs showing S-parameters (dB) against Frequency (GHz). Graph (a) illustrates the impact of varying gap sizes \(g = 0.4, 0.5, 0.6\) mm on the curves. Graph (b) depicts the effect of different panel widths \(wp = 34, 34.5, 35\) mm. Both graphs show variations in curve shapes corresponding to parameter changes.

Parameter analysis. (a)g, (b)wp.

Finally, the physical dimensions of the single-band BPF are determined as follows: g = 0.4 mm, wp = 12 mm, lp = 5.66 mm, ws = 14.17 mm, wm = 0.8 mm, lm = 4.4 mm. Figure 7 shows the simulated frequency response, indicating that the filter has a center frequency of 2.8 GHz, a fractional bandwidth (FBW) of 7.2%, and an insertion loss (IL) of 0.83 dB. Additionally, the −20 dB stopband extends to 2.9f0. Figure 8 presents the simulated electric fields in the passband and the spurious-band. It can be observed that the working mode is the TM10 mode, whereas the spurious mode is the TM12 mode.

FIGURE 7

Graph showing S-parameters in decibels versus frequency in gigahertz. The red line with downward triangles represents S11, peaking near 2.7 GHz. The blue line with upward triangles represents S21, with a dip around 5.5 GHz. Both lines exhibit spikes at the graph's edges.

Simulated S-parameters of the single-band BPF.

FIGURE 8

Two panels, (a) and (b), show heat maps with a horizontal spectrum from blue (minimum) to red (maximum) indicating intensity. Panel (a) displays a symmetrical, vertically oriented pattern with a central red section, transitioning to cooler colors outward. Panel (b) shows a horizontally stretched pattern, with red concentrated in two symmetrical regions surrounded by cooler colors. Both have corresponding vertical color scales for intensity comparison.

Simulated electric field distributions. (a) 2.8 GHz (Passband). (b) 8.75 GHz (Spurious-band).

2.4 Dual-band wide stopband filter

As shown in Figure 9, two quarter-wavelength resonators are embedded within the upper and lower transverse slots to construct a dual-band filter. The resonant frequency of the quarter-wavelength microstrip resonator is determined by its physical length (cl). The relationship is given by Equation 5:where c is the speed of light in vacuum and εr is the effective permittivity of the microstrip line, accounting for the substrate properties and line geometry. Therefore, tuning the length cl provides direct control over the resonant frequency of the microstrip resonator.

FIGURE 9

Diagram showing two configurations of a device with perforated borders. Diagram (a) displays a simple structure, while diagram (b) adds labeled "Quarter Wavelength Resonators" indicated by arrows within dashed boxes. Both include central orange blocks and lateral extensions.

Structure of (a) the single-band design and (b) the dual-band design.

The coupling topologies of the single-band and dual-band filters are illustrated in Figure 10, revealing that the embedded quarter-wavelength resonators act as bandstop sections. By inserting a narrow bandstop segment into the center of the single-pass response, the original passband is split into two separate passbands, resulting in a dual-band response with an extremely small frequency ratio.

FIGURE 10

Diagram showing two configurations of linked nodes. (a) Displays a linear sequence of nodes labeled S, 1, 2, L. (b) Similar sequence with additional nodes labeled 3 and 4 branching above nodes 1 and 2.

Topology of (a) the single-band design and (b) the dual-band design.

Figure 11a compares the single-band and dual-band responses. Adjusting the length of the quarter-wavelength resonators shifts the resonant frequency of the bandstop section, thereby controlling the BW ratio between the two passbands—an effect clearly evident in Figure 11b. Finally, Figure 12 presents the electric-field distribution of the dual-band filter during operation, effectively demonstrating its operational principle.

FIGURE 11

(a) A graph comparing single-band (red dashed line) and dual-band (blue line) S21 (dB) against frequency (GHz) from 2.3 to 3.2 GHz. (b) A graph showing S21 (dB) with different coupling lengths: 20.8 mm (red line), 21.4 mm (green dotted line), and 22 mm (blue dashed line) over the same frequency range. Both graphs illustrate signal behavior changes with frequency.

(a) Performance comparison between the single-band design and dual-band design. (b) Bandwidth controllability of the dual-band design.

FIGURE 12

Thermal simulation image with a color gradient showing heat distribution from blue (cool) to red (hot). The central area is hotter, with temperature decreasing towards the edges. A color scale on the right indicates maximum and minimum temperatures.

Simulated electric field distributions of the dual-band design.

3 Fabrication and measurement

Based on the design procedure, a dual-band prototype is developed on an F4B substrate with the relative dielectric constant of 2.2, loss tangent 0.001, and the thickness of 0.508 mm. The dimensions are finally determined as follows: wp = 17.4, lp = 23.5, g = 0.2, lm = 9.5, wm = 7, sw = 4.5, cw = 1.5, cl = 19, dl = 1.2, and sl = 32.5 (all units: mm). The fabricated filter occupies a compact size of 0.23 λg2. S-parameters are measured using a ZNB20 vector network analyzer. Figure 13 shows the photograph of the fabricated dual-band BPF.

FIGURE 13

Copper microstrip circuit board with two coaxial connectors on each side, featuring a rectangular design with perforations along the edges. The board is placed on a light gray surface.

Photograph of the fabricated dual-band BPF prototype.

Simulation and measurement results in Figure 14 exhibit good agreement, showing two passbands at 2.71 GHz and 2.83 GHz with 3-dB FBWs of 4.1% and 5.54%, respectively. The measured minimum ILs are 1.3 dB and 0.89 dB, while the −20 dB stopband extends to 2.86f0.

FIGURE 14

Graph illustrating S-Parameters (in decibels) versus Frequency (in gigahertz). The red solid line represents simulations, and the blue dashed line represents measurements. Key features include |S11| and |S21| circled, with a significant dip to -20 dB between 2 and 3 GHz. An inset highlights details from 2.5 to 3 GHz.

Photograph of the fabricated dual-band BPF prototype.

Table 1 compares key metrics with state-of-the-art designs, highlighting the proposed filter’s advantages: more compact size, wider stopband suppression enabled by shorted patches, and an extremely small frequency ratio (1:1.06), validating its superiority for integrated RF applications.

TABLE 1

ReferencesCF (GHz)FBW (%)IL (dB)Size (λg2)Rej.(dB)/S.B.(f0)Freq. ratio
Azad and Mohan [9]7.71/9.645.45/8.11.9/1.65N.A.N.A.1:1.25
Zhang et al. [10]3.6/7.18.2/6.71.3/1.20.08N.A.1:1.97
Zhou et al. [11]20/223.99/5.411.58/1.253.86N.A.1:1.1
This work2.71/2.834.1/5.541.3/0.890.2320/2.861:1.04

Comparisons with the state-of-the-art dual-band BPFs.

Iso., isolation; Rej., rejection; S.B., stopband.

4 Conclusion

This work proposes a miniaturized dual-band BPF with closely spaced passbands (1:1.04) and a wide stopband using slots-loaded SIW cavity. By embedding quarter-wavelength resonators in transverse slots, the single passband from shorted patch coupling is split into two narrow passbands. The design achieves a −20 dB stopband up to 2.86f0 due to low harmonic characteristics. A prototype validates the design with good agreement between simulations and measurements, demonstrating its feasibility for compact RF systems.

Statements

Data availability statement

The data that supports the findings of this study are available from the corresponding author upon reasonable request.

Author contributions

YL: Writing – original draft, Formal Analysis, Investigation. JN: Formal Analysis, Writing – original draft, Data curation. SL: Investigation, Methodology, Writing – review and editing. QH: Visualization, Data curation, Writing – review and editing, Formal Analysis. JT: Validation, Visualization, Investigation, Writing – review and editing. NL: Supervision, Validation, Writing – review and editing. TM: Writing – review and editing, Validation, Writing – original draft, Methodology, Investigation, Supervision.

Funding

The author(s) declare that financial support was received for the research and/or publication of this article. This work was supported by the Joint Foundation of Key Laboratory of Shanghai Jiao Tong University-Xidian University, Ministry of Education, under Grant LHJJ/2024-6.

Conflict of interest

The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.

Generative AI statement

The author(s) declare that no Generative AI was used in the creation of this manuscript.

Publisher’s note

All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article, or claim that may be made by its manufacturer, is not guaranteed or endorsed by the publisher.

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Summary

Keywords

bandpass filter, shorted patch, slots-loaded, substrate integrated waveguide (SIW), wide stopband

Citation

Li Y, Ni J, Li S, Han Q, Tian J, Li N and Ma T (2025) Miniaturized dual-band bandpass filter with closely spaced passbands and wide stopband. Front. Phys. 13:1637651. doi: 10.3389/fphy.2025.1637651

Received

29 May 2025

Accepted

23 June 2025

Published

23 July 2025

Volume

13 - 2025

Edited by

He Zhu, University of Technology Sydney, Australia

Reviewed by

Chen Zhao, Nanjing University of Information Science and Technology, China

Liying Nie, Hefei University of Technology, China

Updates

Copyright

*Correspondence: Tianye Ma,

Disclaimer

All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article or claim that may be made by its manufacturer is not guaranteed or endorsed by the publisher.

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