ORIGINAL RESEARCH article
Front. Mater.
Sec. Mechanics of Materials
Volume 12 - 2025 | doi: 10.3389/fmats.2025.1639947
Mechanistic Study on Mechanical Strengthening in As-Extruded Mg-xSn (x=0.5, 2, 4, 6 and 8 wt.%) Alloys
Provisionally accepted
- Shenyang University, Shenyang, China
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This study systematically investigates the influence of Sn content (0.5-8 wt.%) on the microstructural evolution and mechanical properties of as-extruded Mg-Sn alloys. By combining characterization techniques (XRD, SEM, EDS, and EBSD) with valence electron (VE) theory, the fundamental deformation mechanisms were elucidated. The results reveal that Sn content significantly modulates the distribution of Mg₂Sn phases, dynamic recrystallization behavior, and deformation modes. The increase of Sn content has no obvious effect on the grain size, but the area fraction of Mg2Sn phase increases. The Mg-Sn bonds show the highest bonding energy among all possible atomic interactions, leading to enhanced mechanical properties. The alloy with 8% Sn demonstrates an optimal strength-ductility balance, due to grain refinement and strong texture effects. Furthermore, low-Sn alloys (≤2 wt.%) deform primarily via basal slip, exhibiting ductile fracture characteristics, while high-Sn alloys (≥6 wt.%) transition to a mixed fracture mode involving twinning and non-basal slip, attributed to increased Mg₂Sn phase content.
Keywords: Mg-Sn alloy, Mg2Sn phase, Valence electron Calculation, Mechanical Properties, Fracture mechanism
Received: 03 Jun 2025; Accepted: 10 Jul 2025.
Copyright: © 2025 Song, Yang, Niu and Jia. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
* Correspondence: Zheng Jia, Shenyang University, Shenyang, China
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