ORIGINAL RESEARCH article
Front. Mater.
Sec. Mechanics of Materials
Volume 12 - 2025 | doi: 10.3389/fmats.2025.1649115
This article is part of the Research TopicHigh Energy Additive Manufacturing of Advanced MaterialsView all 7 articles
Study on Shear-Thickening-Assisted Abrasive Lapping and Polishing of SiC Ceramic Substrate: Parameter Optimization and Surface Quality Evaluation
Provisionally accepted- 1Lishui Vocational and Technical College, Lishui, China
- 2Central South University, Changsha, China
- 3Zhejiang BSB Electrical Appliance Co., Ltd, lishui, China
- 4State Grid Zhejiang Lishui Power Supply Company, lishui, China
- 5Zhejiang Shuolang Motor Parts Co., Ltd, lishui, China
- 6Zhejiang Chuangxin Auto Air Conditioner Co., Ltd, lishui, China
- 7Zhejiang University of Technology, Hangzhou, China
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This study investigates the rheological properties of shear-thickening polishing fluids with varying compositions using rheometric analysis. The results reveal a significant correlation between the fluid's rheological behavior and the mass fraction of the dispersant phase, identifying an optimal mass fraction of 40 wt.%. Further experiments, conducted using a customized metallographic grinding machine, systematically analyze the influence of key process parameters. The investigation demonstrates that a lapping duration of 30 minutes and a polishing duration of 45 minutes yield optimal performance. Additionally, external pressure experiments indicate that both material removal rate and surface roughness increase with applied pressure, reaching a plateau due to reduced fluid flow and enhanced abrasive penetration, with an optimal pressure of 150 kPa. Furthermore, experiments with varying abrasive particle sizes show that material removal rate and surface roughness increase with larger particles, with an optimal size of 3 μm. In summary, this study establishes the optimal parameters for the integrated shear-thickening assisted abrasive lapping and polishing process: an abrasive particle size of 3 μm, a polishing pressure of 150 kPa, a lapping time of 30 minutes at 200 rpm, and a polishing time of 45 minutes at 100 rpm. The implementation of these optimized parameters achieves a surface roughness of 9.7 nm on SiC ceramic substrates, demonstrating the effectiveness of this advanced processing technique.
Keywords: Abrasive machining processes, Shear-thickening fluid, abrasive lapping and polishing, SiC ceramic, surface quality
Received: 18 Jun 2025; Accepted: 06 Aug 2025.
Copyright: © 2025 Pan, Yuan, Shi, Fang, Huang, Lin and Wu. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
* Correspondence: Haiyang Yuan, Central South University, Changsha, China
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