About this Research Topic
Excitonic behavior is a unique quantum mechanical property found in a large number of semiconductors. The presence of excitons (quasi-particles) allows the host to exhibit exotic optoelectronic properties that could be potentially used in various fields such as transistors, lasers, single-photon sources, and biomedical labeling. In wide bandgap oxide semiconductors, excitons can be induced by multiple means such as doping, strain, external bias, etc., which can tune the optical properties. Depending on the process involved, one can observe neutral excitons, charged excitons, trions, biexcitons, and multi-excitonic in oxide semiconducting materials. Engineering the excitonic properties can lead to the discovery of novel optoelectronic phenomena and various applications with excellent properties.
Despite the tremendous progress on wide-bandgap oxide materials in the last few decades, understanding the interaction of the electron-phonon interaction process is still debatable and far from theoretical and experimental challenges for technological applications. These oxide materials (ZnO, Cu2O, TiO2, In2O3, Ga2O3, and SnO2) and their composites are highly demanding for fundamental study of excitonic physics for excitons, bi-excitons, and Rydberg excitons which are crucial in thermoelectric devices, and considered as strong candidates for next-generation energy conversion devices and various other applications. The new emerging transparent oxide semiconductors materials have the potential to improve their performance in quantum photonic circuits even further. However, a better understanding of the electron-hole recombination process, electron-phonon interactions, excitonic transition, mobile carrier dynamics, charge transport, and interaction with charged defects under specific operating conditions are required to design the next-generation oxide materials based optoelectronic devices. The other exciting milestone of such wide bandgap materials and their heterojunctions is the formation of 2D electron gas (2DEG) with high electron mobility compatible for transition like devices. A mission profile, including modeling and simulation compared to experimental evidence and the role excitonic properties to overcome the new challenges in materials development for technological applications. In addition, the new composite/heterojunction oxides having reduced lattice symmetry in novel wide-bandgap semiconductors enable new structure-property relationships and new design strategies to engineer 1-D and 2D materials with tailored excitonic efficiency. The use of excitonic properties will be of special interest in interdisciplinary research for physics, biology, chemistry and electrical engineers.
This special issue of “Frontiers of Materials” focuses on various aspects of the excitonic properties of wide bandgap semiconducting materials. The topics include but are not limited to:
• Recent advancements in the excitonic semiconductor materials
• Emerging wide bandgap oxide semiconductors with excitonic properties
• The excitonic phenomenon in Low dimensional material
• Device application based on excitonic properties
• Novel methods/techniques to observe and evaluate excitonic behavior
Despite the tremendous progress on wide-bandgap oxide materials in the last few decades, understanding the interaction of the electron-phonon interaction process is still debatable and far from theoretical and experimental challenges for technological applications. These oxide materials (ZnO, Cu2O, TiO2, In2O3, Ga2O3, and SnO2) and their composites are highly demanding for fundamental study of excitonic physics for excitons, bi-excitons, and Rydberg excitons which are crucial in thermoelectric devices, and considered as strong candidates for next-generation energy conversion devices and various other applications. The new emerging transparent oxide semiconductors materials have the potential to improve their performance in quantum photonic circuits even further. However, a better understanding of the electron-hole recombination process, electron-phonon interactions, excitonic transition, mobile carrier dynamics, charge transport, and interaction with charged defects under specific operating conditions are required to design the next-generation oxide materials based optoelectronic devices. The other exciting milestone of such wide bandgap materials and their heterojunctions is the formation of 2D electron gas (2DEG) with high electron mobility compatible for transition like devices. A mission profile, including modeling and simulation compared to experimental evidence and the role excitonic properties to overcome the new challenges in materials development for technological applications. In addition, the new composite/heterojunction oxides having reduced lattice symmetry in novel wide-bandgap semiconductors enable new structure-property relationships and new design strategies to engineer 1-D and 2D materials with tailored excitonic efficiency. The use of excitonic properties will be of special interest in interdisciplinary research for physics, biology, chemistry and electrical engineers.
This special issue of “Frontiers of Materials” focuses on various aspects of the excitonic properties of wide bandgap semiconducting materials. The topics include but are not limited to:
• Recent advancements in the excitonic semiconductor materials
• Emerging wide bandgap oxide semiconductors with excitonic properties
• The excitonic phenomenon in Low dimensional material
• Device application based on excitonic properties
• Novel methods/techniques to observe and evaluate excitonic behavior
Keywords: excitonic oxide semiconductors, Emission and up-conversion processes, Nonlinear excitonic processes, Exciton-lattice interaction processes
Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.
