About this Research Topic
The field of nitride semiconductors has experienced significant advancements, particularly with the emergence of transition metal nitrides and their alloys with wide band-gap group 13 nitrides. These materials exhibit unique properties such as ferroelectricity, ferromagnetism, high piezoelectric coupling, superconductivity, and optical non-linearity, which hold the potential to revolutionize various technological domains. Despite these promising attributes, the integration of transition metal nitrides with traditional nitrides faces several challenges. Current research highlights the potential applications of these materials in high-frequency and high-power transistors, RF-filters, MEMS, optical filters, and spintronics, which could significantly impact the development of a more efficient and sustainable society. However, obstacles such as the oxidation affinity of elements like AlScN and AlYN, and the need for compatible crystal structures, hinder their seamless integration into practical applications. Additionally, stability concerns with polymorphic nitrides like NbNx remain unresolved, necessitating further investigation and innovative solutions.
This research topic aims to address the pressing scientific challenges and explore the vast potential of new emerging transition metal nitride semiconductors and their alloys with classic nitrides. The primary objectives include overcoming the limitations posed by oxidation and structural integration, enhancing device quality and reliability, and exploring novel growth techniques and epitaxial methods. Furthermore, the research seeks to investigate materials with high Curie temperatures for spintronics and the integration of nitrides in quantum computing applications. By advancing our understanding and optimizing these materials, the research aims to drive significant progress in their transformative impact on various technological domains.
To gather further insights in the integration and application of transition metal nitride semiconductors, we welcome articles addressing, but not limited to, the following themes:
- Novel growth techniques and epitaxial methods for transition metal nitrides and their alloys with standard nitrides.
- Characterization of structural, optical, electronic, and magnetic properties of new emerging inorganic ternary metal nitrides.
- Applications of nitride materials in high electron mobility transistors, RF-filters, MEMS, and optical filters, focusing on enhancing device performance.
- Strategies to improve stability and crystal structure control in polymorphic nitrides for superconducting and Josephson junction applications.
- Theoretical investigations and modeling of transition metal nitrides' properties and behavior in electronic and optoelectronic devices.
- Polarization switching behavior in ferroelectric transitional metal nitrides.
- Advancements in spintronic materials using nitrides with high Curie temperatures, including potential spin-based transistor applications.
- Innovations in quantum computing materials achieved through the integration of nitrides in pseudomorphic structures (e.g., Ta2N or NbN).
This research topic aims to address the pressing scientific challenges and explore the vast potential of new emerging transition metal nitride semiconductors and their alloys with classic nitrides. The primary objectives include overcoming the limitations posed by oxidation and structural integration, enhancing device quality and reliability, and exploring novel growth techniques and epitaxial methods. Furthermore, the research seeks to investigate materials with high Curie temperatures for spintronics and the integration of nitrides in quantum computing applications. By advancing our understanding and optimizing these materials, the research aims to drive significant progress in their transformative impact on various technological domains.
To gather further insights in the integration and application of transition metal nitride semiconductors, we welcome articles addressing, but not limited to, the following themes:
- Novel growth techniques and epitaxial methods for transition metal nitrides and their alloys with standard nitrides.
- Characterization of structural, optical, electronic, and magnetic properties of new emerging inorganic ternary metal nitrides.
- Applications of nitride materials in high electron mobility transistors, RF-filters, MEMS, and optical filters, focusing on enhancing device performance.
- Strategies to improve stability and crystal structure control in polymorphic nitrides for superconducting and Josephson junction applications.
- Theoretical investigations and modeling of transition metal nitrides' properties and behavior in electronic and optoelectronic devices.
- Polarization switching behavior in ferroelectric transitional metal nitrides.
- Advancements in spintronic materials using nitrides with high Curie temperatures, including potential spin-based transistor applications.
- Innovations in quantum computing materials achieved through the integration of nitrides in pseudomorphic structures (e.g., Ta2N or NbN).
Keywords: Transition Metal Nitrides, Computational Modeling, Semiconductor Materials, Electronic Devices, Nanomaterials
Important Note: All contributions to this Research Topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more suitable section or journal at any stage of peer review.
