Oxide Semiconductor Devices and Applications

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ORIGINAL RESEARCH

Published on 16 Jul 2026

Al-induced microstructure regularization enabling 115.2 cm2/Vs field-effect mobility in InSnZnO thin-film transistors with an amorphous front-channel

Yuting Xiong
Lu Yang
Xiaolong Wang
Junyan Ren
Yang Xu
Yue Zhai
Lingyan Liang
Hongtao Cao

doi 10.3389/fmats.2026.1894721

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ORIGINAL RESEARCH

Published on 12 Dec 2025

Enhanced electrical stability of IGZO thin-film transistors using atomic layer deposited Al2O3/HfO2 dual-layer gate insulator

Shaocong Lv
Weilin Wang
Shuaiying Zheng
Chengyuan Wang
Qian Xin
Yuxiang Li
Aimin Song
Jaekyun Kim
Jidong Jin
Jiawei Zhang

doi 10.3389/fmats.2025.1735405

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Frontiers in Materials

Semiconducting Materials and Devices

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