ORIGINAL RESEARCH
Published on 12 Dec 2025
Enhanced electrical stability of IGZO thin-film transistors using atomic layer deposited Al2O3/HfO2 dual-layer gate insulator
doi 10.3389/fmats.2025.1735405
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- Frontiers in Materials
- Semiconducting Materials and Devices
- Research Topics
- Oxide Semiconductor Devices and Applications
Oxide Semiconductor Devices and Applications
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