ORIGINAL RESEARCH
Published on 09 Jul 2025
2DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effect
doi 10.3389/femat.2025.1622176
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- Frontiers in Materials
- Semiconducting Materials and Devices
- Research Topics
- Advancing Transition Metal Nitride Semiconductors: Overcoming Integration Challenges and Exploring Applications
Advancing Transition Metal Nitride Semiconductors: Overcoming Integration Challenges and Exploring Applications
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ORIGINAL RESEARCH
Published on 02 Apr 2025
Piezoelectric and ferroelectric measurements on casted target-deposited Al0.45Sc0.45B0.1N thin films
doi 10.3389/fmats.2025.1567614
- 1,408 views
- 1 citation
REVIEW
Published on 04 Feb 2025
A comprehensive review of yttrium aluminum nitride: crystal structure, growth techniques, properties, and applications
doi 10.3389/fmats.2025.1526968
- 1,633 views
ORIGINAL RESEARCH
Published on 29 Jan 2025
Epitaxial growth of transition metal nitrides by reactive sputtering
doi 10.3389/fmats.2025.1507123
- 959 views
Published in
Frontiers in Materials
Semiconducting Materials and Devices