Original Research
Accepted on 23 Jun 2025
A comparative study on InGaAs/InAsSb and InAs/InAsSb strained layer superlattices
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2025.1633165
- 122 views
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117 articles
Editorial
Published on 20 Jun 2025
Editorial: Wide-bandgap oxide semiconductors: unveiling excitonic potential
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2025.1640463
- 716 views
Review
Published on 19 Jun 2025
Application and mechanism of graphene and polydopamine-modified graphene in anticorrosion coatings
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2025.1586574
- 883 views
Perspective
Published on 05 Jun 2025
Tin-based halide perovskite nanocrystals: challenges, opportunities, and future directions
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2025.1627480
- 1,606 views
Original Research
Published on 20 May 2025
Study of MASnI3 perovskite photodetectors prepared by the inverse temperature crystallization method in ambient atmosphere and the spin coating method in a glovebox
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2025.1559686
- 1,023 views
Original Research
Published on 29 Apr 2025
Polarization scattering-based detection of lubricating materials
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2025.1596327
- 838 views
Original Research
Published on 02 Apr 2025
Piezoelectric and ferroelectric measurements on casted target-deposited Al0.45Sc0.45B0.1N thin films
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2025.1567614
- 1,654 views
- 1 citation
Review
Published on 04 Feb 2025
A comprehensive review of yttrium aluminum nitride: crystal structure, growth techniques, properties, and applications
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2025.1526968
- 2,189 views
Original Research
Published on 29 Jan 2025
Epitaxial growth of transition metal nitrides by reactive sputtering
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2025.1507123
- 1,216 views
Original Research
Published on 08 Jan 2025
Process-dependent ferroelectric and memristive properties in polycrystalline Ca:HfO2-based devices
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1501000
- 1,328 views
Original Research
Published on 07 Nov 2024
High-performance optoelectronic devices based on TeOx nanowires: synthesis, characterization and photodetection
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1497540
- 936 views
Original Research
Published on 11 Oct 2024
Submicron-scale Au-decorated TiO2 mesoporous spheres for enhanced photon harvesting in DSSCs through near-field enhancement, light scattering, and dye loading
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1457325
- 1,328 views
Original Research
Published on 14 Aug 2024
Ferroelastic twin walls for neuromorphic device applications
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1406853
- 1,613 views
- 1 citation
Original Research
Published on 13 Jun 2024
Gallium-incorporated TiO2 thin films by atomic layer deposition for future electronic devices
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1430884
- 1,502 views
Review
Published on 03 Jun 2024
MPX3 van der Waals magnets under pressure (M = Mn, Ni, V, Fe, Co, Cd; X = S, Se)
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1362744
- 4,074 views
- 4 citations
Original Research
Published on 03 Jun 2024
Optimization of the position of TaOx:N-based barrier layer in TaOx RRAM devices
in Semiconducting Materials and Devices
Frontiers in Materials
doi 10.3389/fmats.2024.1343076
- 2,200 views
- 3 citations